# Fileset

[Manuscript_final .docx](https://mdr.nims.go.jp/filesets/a83f1ad9-fa10-410f-8976-d78d1af2f25b/download)

## Creator

[Takayoshi Oshima](https://orcid.org/0000-0001-8550-9735), [Yuichi Oshima](https://orcid.org/0000-0001-8293-4891)

## Rights

© 2022 The Japan Society of Applied Physics <br>
This is an author-created, un-copyedited version of an article accepted for publication/published in Applied Physics Express. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or
any version derived from it. The Version of Record is available online at https://doi.org/10.35848/1882-0786/ac75c8.[Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International](https://creativecommons.org/licenses/by-nc-nd/4.0/)

## Other metadata

[Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy](https://mdr.nims.go.jp/datasets/cf97396a-8d37-4bcb-9771-012b1cf5d4de)

## Fulltext