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[[Vol. 2]High-performance thin film boost for electronics research_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/a06dd258-bfea-469d-bc19-3a3de56b343f/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.2] High-Performance Thin Film Boost for Electronics Research](https://mdr.nims.go.jp/datasets/07dd7d03-a3da-4ee5-8e23-1cd132610412)

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2022/04/04 10:30 High-performance thin film boost for electronics research| MANAhttps://www.nims.go.jp/mana/research/highlights/vol2.html 1/2Previous  Index  NextResearch Highlights[Vol. 2]High-performance thin film boost for electronics research4 Jan, 2012MANA researchers have developed the world's highest performance thin-filmcapacitors using a new high-permittivity (high-κ) dielectric sheet withmolecular-level thickness (~1 nm). This technology may revolutionize thenext-generation electronics.Figure : Tailor-made dielectric nanosheet via controlled nanoscale doping. (a)Structural change induced by Nb doping. (b) AFM image of titanium-niobatenanosheet.The announcement of this breakthrough comes from a research group led by MANA Scientist Dr.Minoru Osada and Principal Investigator Dr. Takayoshi Sasaki of the International Center forMaterials Nanoarchitectonics (MANA) at the National Institute for Material Science (NIMS) in Japan.Good insulating, high-κ nanofilms are expected to be key to future applications as predicted by theInternational Technology Roadmap for Semiconductors (ITRS).Minoru Osada and colleagues created thin films based on titanium-niobate nanosheets (TiNbO5,Ti2NbO7, Ti5NbO14) as building blocks. The research group delaminated layered oxides andstacked sheets on an atomically flat SrRuO3 substrate, creating films between 5 and 15 nm thick.The thin-film capacitors developed by this method have excellent dielectric characteristics,achieving the world's highest performance permittivity (160 ~ 300) with a film thickness of 5 ~ 15nm.The researchers relate the dielectric performance of the nanofilms to the structural features. Inthese nanosheets, the octahedral distortion inherent to site engineering by Nb doping results in ahttps://www.nims.go.jp/mana/research/highlights/vol1.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol3.html2022/04/04 10:30 High-performance thin film boost for electronics research| MANAhttps://www.nims.go.jp/mana/research/highlights/vol2.html 2/2giant molecular polarizability. New cooperative functions that originate from the mutualinteractions between nanoscale structural units comprise the focus of nanoarchitectonics, thediscipline at the center of MANA research.This latest research demonstrates simultaneous improvements in a number of material properties,including relative permittivity, lower loss and leakage current. The authors add, “The solution-based room-temperature process using oxide nanosheets as building blocks opens multiplepossibilities for the development of high-κ dielectrics in capacitor technology, gate insulators inorganic field effect transistors, energy-storage devices, and also future flexible electronics.”Reference"Controlled Polarizability of One-Nanometer-Thick Oxide Nanosheets for Tailored, High-κNanodielectrics"Minoru Osada, Genki Takanashi, Bao-Wen Li, Kosho Akatsuka, Yasuo Ebina , Kanta Ono, HiroshiFunakubo, Kazunori Takada, and Takayoshi SasakiJournal: Advanced Functional Materials. [26 July 2011]DOI: 10.1002/adfm.201100580AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jphttps://samurai.nims.go.jp/profiles/osada_minoru?locale=enhttps://samurai.nims.go.jp/profiles/ebina_yasuo?locale=enhttps://samurai.nims.go.jp/profiles/sasaki_takayoshi?locale=enhttps://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201100580