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Mizuki Abe, [Yu Yamashita](https://orcid.org/0000-0001-7966-3197), Taiki Sawada, Tatsuyuki Makita, Shohei Kumagai, Shun Watanabe, [Jun Takeya](https://orcid.org/0000-0002-7003-1350)

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[Strained Organic Thin‐Film Single Crystals for High‐Mobility and High‐Frequency Transistors](https://mdr.nims.go.jp/datasets/e6da42d2-cd8a-4bb7-940d-2753e4a4df8e)

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Strained Organic Thin‐Film Single Crystals for High‐Mobility and High‐Frequency TransistorsRESEARCH ARTICLEwww.advelectronicmat.deStrained Organic Thin-Film Single Crystals for High-Mobilityand High-Frequency TransistorsMizuki Abe, Yu Yamashita,* Taiki Sawada, Tatsuyuki Makita, Shohei Kumagai,Shun Watanabe, and Jun Takeya*Transistors fabricated from thin-film single crystals of organic semiconductors(OSCs) have exhibited high mobility exceeding 10 cm2 V−1 s−1 and showcompatibility with low-cost solution processing. However, their carriermobility is limited by the molecular vibrations in their soft lattices. This studyestablishes a practical method for applying compressive strain tosingle-crystal OSCs to enhance mobility and transistor performance. In thismethod, a polymer film substrate is bent to mechanically stretch its surface.Organic single-crystal transistors are then laminated onto the stretchedsurface of substrate. Releazing the stretch by recovering the flat surface of thesubstrate allowed the transistors to be compressed by up to 3%. This resultedin a 52% increase in mobility, reaching 26.4 cm2 V−1 s−1. X-ray diffractionmeasurements confirmed lattice strain in the OSC single crystals. Moreover,carrier mobility and cutoff frequency increased in MHz-operatingshort-channel transistors, demonstrating applicability for high-frequencydevices. The mobility increase is maintained even three years afterintroducing the 1% compressive strain, possibly owing to the flexible,molecularly thin characteristics of OSC single crystals. The proposed strainmanagement methods may provide new avenues to enhance the performanceof high-mobility and high-frequency electronic devices based on OSC thin-filmsingle crystals.M. Abe, Y. Yamashita, T. Sawada, T. Makita, S. Watanabe, J. TakeyaDepartment of Advanced Materials ScienceGraduate School of Frontier SciencesThe University of Tokyo5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8561, JapanE-mail: YAMASHITA.Yu@nims.go.jp; takeya@k.u-tokyo.ac.jpY. Yamashita, J. TakeyaResearchCenter forMaterialsNanoarchitectonics (MANA)National Institute forMaterials Science (NIMS)1-1Namiki, Tsukuba, Ibaraki305-0044, JapanS. KumagaiDepartment of Chemical Science andEngineeringSchool ofMaterials andChemical TechnologyInstitute of ScienceTokyo4259-G1-7Nagatsuta,Midori-ku, Yokohama, Kanagawa226-8501, JapanThe ORCID identification number(s) for the author(s) of this articlecan be found under https://doi.org/10.1002/aelm.202500144© 2025 The Author(s). Advanced Electronic Materials published byWiley-VCH GmbH. This is an open access article under the terms of theCreative Commons Attribution License, which permits use, distributionand reproduction in any medium, provided the original work is properlycited.DOI: 10.1002/aelm.2025001441. IntroductionSingle-crystal thin films of organic semi-conductors (OSCs)[1–8] exhibit flexibil-ity, stability, and high mobility, posi-tioning them as suitable candidates forelectronic devices fabricated via low-cost solution processes. Organic thin-film transistors (OTFTs) made fromOSC single crystals find applications indevices such as wireless communica-tion tags,[9,10] complementary circuits,[11]and sensors.[5,12,13] The cutoff frequencyof OTFTs can exceed the very high-frequency band (≈30MHz) owing to highmobility values around 10 cm2 V−1 s−1in band-transporting materials.[14–17] Al-though enhancing mobility would fa-cilitate high-frequency device develop-ment, carrier scattering from molec-ular vibrations restricts OSC mobilityat room temperature.[18–20] Researchershave relied on advanced molecular de-signs, including design, synthesis, andevaluation of new molecules, to reducethe effects of molecular vibrations[21,22]and in advancing organic electronics.Strain serves as an external factor that can improve carriermobility and operational frequency in semiconductor devices. Ininorganic semiconductors, the modulation of the crystal struc-ture by external strain can modify the effective mass and car-rier mobility,[23] known as the piezoelectric effect.[24] A repre-sentative example is the strained silicon metal oxide field-effecttransistor,[25–27] where persistent strain is applied around the in-terface of epitaxially grown materials with different lattice con-stants to enhance mobility and operating frequency.Strain engineering in flexible electronics[28–31] could be crucialfor improving the device properties of OSC single crystals. Stud-ies have demonstrated enhancements in carrier mobility by ap-plying strains that uniformly modify lattice constants.[13,30,32–37]For example, a 2.9% uniaxial strain can increase mobility by upto 70%, largely due to the reduced molecular vibration ampli-tude and increased carrier relaxation time.[36] Such uniaxial strainis achieved by bending the substrates, leveraging the flexibilityand small Young’s modulus of OSCs compared to those of inor-ganic materials.[38,39] However, this approach requires the sub-strate to remain bent with a very small curvature radius, typ-ically less than 1 cm, to induce strain of up to 3%, which isAdv. Electron. Mater. 2025, 11, 2500144 2500144 (1 of 7) © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbHhttp://www.advelectronicmat.demailto:YAMASHITA.Yu@nims.go.jpmailto:takeya@k.u-tokyo.ac.jphttps://doi.org/10.1002/aelm.202500144http://creativecommons.org/licenses/by/4.0/http://crossmark.crossref.org/dialog/?doi=10.1002%2Faelm.202500144&domain=pdf&date_stamp=2025-06-17www.advancedsciencenews.com www.advelectronicmat.deFigure 1. Method to induce persistent strain in organic thin-film transistors (OTFTs). a) Schematic of the method to induce persistent strain in OTFTs.b) Schematic of the device structure and packing and chemical structures of C8–DNBDT–NW. c) Polarized optical microscope image of the fabricatedtransistor. The channel direction is parallel to the c-axis of the single crystal.unsuitable for practical applications. Alternatively, lattice straincan be induced in OSCs by varying the solution shearingspeed during crystal growth.[32,40] However, this method yieldslower strain magnitudes compared to the bending method,resulting in considerable expansion in one crystal axis whenshrinkage occurs in another. Additionally, strain relaxationat the OSC/substrate interface occurs through weak van derWaals forces. Thus, a novel method for inducing strain inOSC single crystals could enhance mobility and performancein OTFTs.This study developed a practical method to induce uniaxialcompressive lattice strain in OSC thin-film single crystals, en-hancing mobility and cutoff frequency. Single-crystal OTFTs fab-ricated on flexible thin substrates were attached to the convexsurface of a bent mother substrate (Figure 1a(i), (ii)). Uponreleazing the bending, the OTFTs experienced strain accord-ing to the change in the mother substrate’s surface length(Figure 1a(iii)). This method produced uniform strain in theOSC single crystal, as confirmed via X-ray diffraction (XRD)measurements. Uniaxial lattice strain was controlled by mod-ifying the initial curvature of the mother substrate. We ap-plied strain levels of up to 3%, resulting in a mobility increaseof 50%, reaching 26.4 cm2 V−1 s−1. Additionally, the cutoff fre-quency of the OTFT with a 10 μm channel length increased by40% with persistent 1% compressive strain. Our findings high-light the effectiveness of strain engineering in organic, flexibleelectronics, providing opportunities for enhancing mobility anddevice performance.2. Results and DiscussionWe fabricated transistors with a bottom-gate top-contact struc-ture to investigate the effect of lattice strain on the perfor-mance of single-crystal OTFTs. We used thin-film singlecrystals of 3,11-dioctyldinaphtho[2,3-d:2’,3’-d’]benzo[1,2-b:4,5-b’]dithiophene(C8–DNBDT–NW)[14] as the active layer on a16 μm-thick polyimide (PI) substrate (Figure 1b). The gateelectrode and gate dielectric were thermally deposited withAu (40 nm) and Parylene-SR (200 nm), respectively. A-few-molecular-layer thick single crystals of C8–DNBDT–NW weredeposited on the Parylene-SR layer via the continuous edge-casting method,[2,8] a meniscus-guided coating method. The Ausource and drain contacts were thermally deposited througha shadow mask with a channel length of 240 μm and a widthof 80 μm. The crystal growth direction of C8–DNBDT–NW isaligned parallel to the channel of the OTFTs, ensuring thatthe charge transport direction aligned with the crystal’s c-axis(Figure 1c).We developed a novel method to induce persistent compres-sive strain in OTFTs. OTFTs prefabricated on a PI substrate weretightly attached to a convexly bent polyethylene terephthalate(PET) mother substrate (Figure 1a(i), (ii)) using a cyanoacrylateadhesive (CC-33A, KYOWA). The thickness of the PET mothersubstrate is 500 μm, more than 30 times that of the PI sub-strate of our OTFTs. When the PET mother substrate is convexlybent, its upper surface is stretched, whereas the lower surfaceis compressed. The OTFTs attached to the stretched surface ofAdv. Electron. Mater. 2025, 11, 2500144 2500144 (2 of 7) © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH 2199160x, 2025, 13, Downloaded from https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500144 by Yu Yamashita - University Of Tokyo , Wiley Online Library on [16/11/2025]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons Licensehttp://www.advancedsciencenews.comhttp://www.advelectronicmat.dewww.advancedsciencenews.com www.advelectronicmat.deFigure 2. Bragg peak shifts of the organic semiconductor (OSC) single crystal by mechanical strain. Results of X-ray diffraction measurements of (a)(020), (b) (021), and (c) (011) surfaces of C8–DNBDT–NW single crystals. Blue lines show the results for the initial state and red lines show those afterinducing a nominal strain of −0.98%.the mother substrate endured persistent compression when themother substrate returned to a flat state. The surface strain ɛ of abent film is expressed as follows:[41]|𝜀| ≈ hs2R(1)where R is the radius of curvature, and hs is the film thickness.A positive ɛ represents tensile strain, while a negative value in-dicates compressive strain. When the thickness of the OTFT isconsiderably smaller than that of the mother substrate, the strainapplied to the OTFT as the mother substrate returns to the flatstate can be approximated as follows:|𝜀| = hms2 (R + hOTFT2+ hms)≈hms2 (R + hms)(2)where hOTFT and hms are the thicknesses of the OTFT andmothersubstrate, respectively. Thus, the strain applied to our OTFTs canbe controlled by adjusting the thickness and curvature of themother substrate. To secure the OTFTs to the PET mother sub-strate, we attached the PET mother substrate to a cylindrical sur-face to allow precise control over the curvature radius (Figure S1,Supporting Information). The c-axis of C8–DNBDT–NW alignedwith the circumferential direction of the cylinder, where com-pressive strain was applied. In the following experiments, wemaintained a constant hms of 500 μm and varied the R values.We determined changes in the lattice constants of C8–DNBDT–NW single crystals using XRD measurements con-ducted before and after attaching the OTFT substrates to themother substrates. Due to the substantial thickness of themothersubstrate,minimizing background noise was crucial to observingthe diffraction peaks of the single crystals. Instead of the trans-mission setups commonly employed for single crystals, we usedthe grazing-incidence X-ray diffraction (GIXD) method owing toits high surface sensitivity. Figure 2 shows the Bragg diffractionpeaks from the C8–DNBDT–NW single crystal, while Table 1 liststhe changes in lattice constants before and after attaching theOTFT substrate to the mother substrate. The detailed fitting pro-cedures are shown in Figures S2 and S3 (Supporting Informa-tion). In this measurement, the curvature of the mother sub-strate was controlled to apply a strain of −0.98% to the OTFTsubstrate. The lattice constant along the c-axis was decreased by1.1% based on the observed shifts in the (021) and (011) diffrac-tion peaks. This correlation between the predicted and observedstrains suggests that our method effectively induces controlledlattice strain in the OSC thin-film single. The width of the diffrac-tion peaks did not increase upon application of strain, support-ing the uniformity of the lattice constant in the fabricated sample(Table S1, Supporting Information). In addition, the lattice con-stant along the b-axis increased by only 0.03%, confirming thatuniaxial strain mainly occurred along the c-axis with our method.We confirmed enhanced mobility by our method throughfour-terminal measurements of single-crystal OTFTs. The mea-surements were conducted on OTFTs with a long channellength (L = 240 μm), eliminating the influence of contact resis-tance. Unstrained OTFTs exhibit nearly ideal transfer and out-put characteristics (Figure 3a–c), achieving four-terminal mobil-ity of 17.4 cm2 V−1 s−1 (Figure 3d). This OTFT was attached tothe mother substrate such that a compressive strain could beTable 1. Changes in lattice constants of C8–DNBDT–NW when applying a nominal strain of −0.98%. The lattice constant errors are calculated fromthe standard deviation of the peak positions of each crystal surface from measurements taken at various incident angles ϕ. See Figure S2 (SupportingInformation) for details.Lattice constant Strainb [Å] c [Å] ɛb [%] ɛc [%]Initial 7.991 ± 0.004 6.10 ± 0.01 — —Strained 7.994 ± 0.004 6.03 ± 0.01 +0.03 ± 0.06 −1.1 ± 0.3Adv. Electron. Mater. 2025, 11, 2500144 2500144 (3 of 7) © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH 2199160x, 2025, 13, Downloaded from https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500144 by Yu Yamashita - University Of Tokyo , Wiley Online Library on [16/11/2025]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons Licensehttp://www.advancedsciencenews.comhttp://www.advelectronicmat.dewww.advancedsciencenews.com www.advelectronicmat.deFigure 3. Enhancement of static performances of OTFTs by applying persistent strain. Transfer properties in a) linear and b) saturation regions;c) Output properties. d) Gate voltage dependence of the four-terminal conductivity. The career mobilities extracted from these plots are also shown.e) Dependence of the changes in four-terminal mobility on the nominal strain. f) Gate voltage dependence of the four-terminal conductivity of our OTFTin the initial state (blue), after inducing −0.98% strain (red), and 284 days after inducing the strain (purple), and 1187 days after inducing the strain(light blue).applied along the c-axis of C8–DNBDT–NW, which is the chan-nel direction of our OTFTs. The curvature radius of the mothersubstrate was controlled (R = 7.5mm) to introduce a nominalstrain of −3.1%. After applying the strain, the four-terminalmobility increased by 52%, reaching 26.4 cm2 V−1 s−1. Smallerstrain performances are shown in Figures S4 and S5 (Support-ing Information), where all devices exhibited increased mobil-ity following compressive strain without significant degrada-tion in transport properties. Notably, the four-terminal mobil-ity increased monotonically with the applied nominal compres-sive strain (Figure 3e), which is consistent with our previousfindings.[36] This demonstrates that a compressive strain of up to3% enhances mobility. We attribute the mobility enhancementto the suppression of molecular vibration rather than changesin effective mass;[36,42] a reduction in the lattice constant of C8–DNBDT–NW directly restricts the molecular vibrations associ-ated with electron–phonon coupling.We verified the persistence of the compressive strain in ourOTFTs by measuring the changes in four-terminal mobility overtime. After inducing strain, OTFT was restored in a vacuum des-iccator to mitigate environmental influences. Notably, the mo-bility of the OTFT strained by −1% remained stable even af-ter 1187 days (Figure 3f). OTFTs with larger strain also showedmoderate stability of performances (Figure S6, Supporting In-formation). These findings verify suppressed strain relaxation atthe interface between the OSC thin-film single crystals and sub-strate. The OSC film thickness is only 10 nm, and Young’s mod-ulus for OSCs is typically more than one order of magnitudelower than that of inorganic materials.[39] Therefore, the stress atthe semiconductor/substrate interface appears sufficiently low tosuppress strain relaxation.In OTFT applications, improving mobility and cutoff fre-quency (fT) is crucial for enhancing dynamic performance. Thecutoff frequency, defined as the maximum frequency at which atransistor can amplify a signal, is given byfT =gm2𝜋CG(3)where gm is the transconductance (= 𝜕ID𝜕VG) and CG is the totalcapacitance, including gate and parasitic capacitances. In top-contact bottom-gate OTFTs, parasitic capacitance primarily re-sults from the overlap between the gate and source/drain elec-trodes, referred to as the contact length (LC). Therefore, a largecarrier mobility, short channel length (L), and short contactlength are necessary for enhancing cutoff frequency. To evaluatethe effect of lattice strain on the dynamic properties of OTFTs,a short-channel transistor was fabricated on a 16 μm-thick PIsubstrate using photolithography to pattern the electrodes. Thechannel and contact lengths of this device were 10 and 5 μm,Adv. Electron. Mater. 2025, 11, 2500144 2500144 (4 of 7) © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH 2199160x, 2025, 13, Downloaded from https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500144 by Yu Yamashita - University Of Tokyo , Wiley Online Library on [16/11/2025]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons Licensehttp://www.advancedsciencenews.comhttp://www.advelectronicmat.dewww.advancedsciencenews.com www.advelectronicmat.deFigure 4. Enhancement of static and dynamic performances of a short channel OTFT. a) Static transfer properties before and after strain. b) Frequencydependence of the current gain before and after strain. c) Schematic of the cutoff frequency measurement setup.respectively. Static and dynamic characteristics were evaluatedbefore and after applying a compressive strain (Figure 4a,b)of −0.98% along the c-axis. Before inducing strain, theshort-channel OTFT demonstrated an effective mobility of0.71 cm2 V−1 s−1 in the saturation regime. After inducing strain,the effective mobility increased to 1.01 cm2 V−1 s−1, marking a40% improvement. Owing to the effect of contact resistance, themobility of the short-channel device is smaller than the intrinsicvalue obtained from four-terminal measurements. Note that thecontact resistance can be decreased by strain application, whichis supported in our long-channel four-terminal measurements(Figure S7, Supporting Information). This can be attributed toan increase in carrier mobility within the overlap region betweenthe contact and gate electrodes.[43] The cutoff frequency was ex-perimentally measured by observing the frequency at which thetransistor’s current gain dropped to 0 dB using the setup shownin Figure 4c. The current gain, defined as the ratio of the draincurrent amplitude (ΔIG) to the gate current amplitude (ΔID), de-creased as a function of f−1. The measured fT was 0.98 MHz be-fore strain application. After inducing strain, the current gain inthe dynamic measurements increased, and the extracted cutofffrequency increased to 1.4 MHz, showing a 40% improvement.The cutoff frequency in the saturation region can be expressed asfollows:[14,44–47]fT =𝜇eff |VG − VTh|2𝜋L(23L + 2LC) (4)where µeff is the effective mobility of the transistor and VTh isthe threshold voltage. The increase in the cutoff frequency canbe ascribed to the increase in effective mobility in our case. Ourfindings demonstrate that introducing persistent lattice strain ef-fectively improves the static and dynamic responses of single-crystal OTFTs.Our findings highlight the importance of strain engineering inflexible electronics using thin-film single crystals. For OSC thin-film single crystals, the lattice strain was preserved on flexiblesubstrates even without covalent bonding between the crystalsand substrates. Our methodmay allow for the controlled applica-tion of strain to various thin-film single crystals and devices, notlimited to those of OSCs, with potential increases in achievablestrain through substrate material design. In addition, in flexibleelectronics, substrates undergo shrinkage and expansion duringsolution processing and heating, altering the lattice constants ofoverlying single crystals. Thus, the lattice constants and physicalproperties of thin-film single crystals may differ from those ofbulk materials owing to the residual strain. The GIXD measure-ments employed in this study can evaluate strain in these thinfilms under the same device-operating conditions.3. ConclusionThis study developed a practical method to induce lattice strainin OSC thin-film single crystals. Uniaxial lattice strain in OSCsingle crystals was confirmed by GIXDmeasurements. The four-terminal mobility of strained OTFT increased by 52%, reaching26.4 cm2 V−1 s−1 with a nominal compressive strain of 3.1% inthe flattened state. This highlights the advantages over the con-ventional bending method, which requires the device to remainbent with a very large curvature. The induced strain of −0.98%remained almost stable even after three years, demonstrating thefeasibility of maintaining lattice strains in molecularly thin OSCsingle crystals on flexible substrates. The mobility enhancementalso raised the cutoff frequency of ourMHz-operatingOTFT. Fur-ther advancements in interface engineering may yield larger andmore stable lattice strains. The strain engineering demonstratedhere provides opportunities to control and enhance the perfor-mance of high-mobility, high-frequency electronic devices usingOSC thin-film single crystals.4. Experimental SectionDevice Fabrication: All devices in this studywere fabricated on a 16 μm-thick PI film (zenomax®). The PI film was pre-laminated onto glass andpeeled off after fabricating the OTFT devices. Gold was thermally evap-orated to form the gate electrode. Parylene-SR (KISCO Ltd.) was de-posited via chemical vapor deposition, achieving a gate dielectric thick-ness of 200 nm. Single-crystal film of C8–DNBDT–NW was grown on theParylene-SR layer via a continuous edge-casting method from a 0.010wt.%3-chlorothiophene solution at 63°C. A 40 nm thick gold layer was ther-mally deposited through the shadow mask to form the source-draincontact electrodes and voltage probe on the C8–DNBDT–NW layer. DryAdv. Electron. Mater. 2025, 11, 2500144 2500144 (5 of 7) © 2025 The Author(s). Advanced Electronic Materials published by Wiley-VCH GmbH 2199160x, 2025, 13, Downloaded from https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500144 by Yu Yamashita - University Of Tokyo , Wiley Online Library on [16/11/2025]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons Licensehttp://www.advancedsciencenews.comhttp://www.advelectronicmat.dewww.advancedsciencenews.com www.advelectronicmat.deetching of the OSC layer was performed using a Yttrium Aluminum Gar-net Laser (V-Technology Co., Ltd., Callisto (266 nm)).OTFT devices for high-frequency measurements were fabricated viaphotolithography to pattern the gate, source, and drain electrodes. Cr(1.5 nm)/Au (20 nm)/Cr (1.5 nm) layer was patterned via a lift-off processto define the gate electrode. TLOR (Tokyo Ohka Kogyo Co., Ltd.), NMD-3(Tokyo Ohka Kogyo Co., Ltd.), and 1-Methyl-2-Pyrrolidone were used asthe positive photoresist, developer, and remover, respectively. As a gatedielectric, a 60 nm thick aluminum oxide was deposited via atomic layerdeposition, followed by Parylene-SR (50 nm) via chemical vapor deposi-tion. A single crystal 3,11-dinonyldinaphtho[2,3-d:2’,3’-d’]benzo[1,2-b:4,5-b’]dithiophene (C9–DNBDT–NW) was transfered[48] onto the Parylene-SRlayer to serve as the active layer. The gold contact electrodes were pat-terned using multiple photographic processes, utilizing AZ5214E (Merck)and AURUM S-50790 (Kanto Chemical Co., Ltd.) as the positive photore-sist and gold etchant, respectively. All lithographic processes were per-formed using a maskless aligner (MLA150, Heidelberg Instruments).X-ray Diffraction Measurement: For X-ray diffraction measurements,C8–DNBDT–NW was deposited on a PI substrate covered by Parylene-SR via continuous edge-casting, achieving a mono-domain single crystalafter wet-etching with 1,2,3,4-tetrahydronaphtalene. GIXD measurementswere conducted using SmartLab-2D/ME/T (Rigaku) with CuK𝛼 radiation(𝜆 = 0.154187 nm at room temperature) to quantify changes in the C8–DNBDT–NW lattice constant.Electrical Measurement: All electrical measurements were conductedunder dark and ambient conditions. The static transistor properties weremeasured using a semiconductor parameter analyzer (Keithley 4200-SCS).Four-terminal conductivity was calculated by following equation, 𝜎4T =(L4T∕W)(|ID∕(V1 − V2)|), where L4T was length between a pair of voltageprobes and V1, V2 were the potential indicated by voltage probe. Simi-larly, the four-terminal mobility was obtained from the following expres-sion, μint = (1/Ci)(∂𝜎4T/∂VG), where Ci was the capacitance per unit areaof gate dielectric. The high-frequency responses were measured using adigital phosphor oscilloscope (Tektoronix TDS3014C). AC voltage signalsof 1 V peak-to-peak and a −9.5 V DC offset were generated using a func-tion generator (Tektronix AFG3102) for the gate voltage, while a DC drainvoltage of −10 V was applied using a semiconductor parameter analyzer.The output signals of the gate and drain voltages were measured using anoscilloscope equipped with current probes (Tektronix CT-6).Supporting InformationSupporting Information is available from the Wiley Online Library or fromthe author.AcknowledgementsThis work was supported in part by JST CREST (JPMJCR21O3) and JSPSKAKENHI grants (JP22H04959).Conflict of InterestThe authors declare no conflict of interest.Author ContributionsM.A. and Y.Y. conceived of and designed the study. M. A. conducted the de-vice fabrication andmeasurements. T.S. contributed to the high-frequencymeasurements. T. M. contributed to the fabrication of the short-channeldevice. Y.Y. and S.K. contributed to the GIXD analysis. 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Advanced Electronic Materials published by Wiley-VCH GmbH 2199160x, 2025, 13, Downloaded from https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500144 by Yu Yamashita - University Of Tokyo , Wiley Online Library on [16/11/2025]. See the Terms and Conditions (https://onlinelibrary.wiley.com/terms-and-conditions) on Wiley Online Library for rules of use; OA articles are governed by the applicable Creative Commons Licensehttp://www.advancedsciencenews.comhttp://www.advelectronicmat.de Strained Organic Thin-Film Single Crystals for High-Mobility and High-Frequency Transistors 1. Introduction 2. Results and Discussion 3. Conclusion 4. Experimental Section Supporting Information Acknowledgements Conflict of Interest Author Contributions Data Availability Statement Keywords