# Fileset

[Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf](https://mdr.nims.go.jp/filesets/890c35fc-8b3b-4cdc-b24d-e8cee5429903/download)

## Creator

[Yuichi Oshima](https://orcid.org/0000-0001-8293-4891), [Takayoshi Oshima](https://orcid.org/0000-0001-8550-9735)

## Rights

[Creative Commons BY Attribution 4.0 International](https://creativecommons.org/licenses/by/4.0/)

## Other metadata

[Rapid homoepitaxial growth of (011) β-Ga                    <sub>2</sub>                    O                    <sub>3</sub>                    by HCl-based halide vapor phase epitaxy](https://mdr.nims.go.jp/datasets/7ff80937-a357-436a-9aae-9f2cc9e8ece1)

## Fulltext