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[[Vol. 34]Atomically Thin Perovskites Boost for Future Electronics_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/6c4ce9b4-4780-4556-af9c-a5cb91c06df4/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.34] Atomically Thin Perovskites Boost for Future Electronics](https://mdr.nims.go.jp/datasets/b9f037fd-1ad0-4011-ac48-13aa623e7779)

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2022/04/04 10:08 Atomically Thin Perovskites Boost for Future Electronics| MANAhttps://www.nims.go.jp/mana/research/highlights/vol34.html 1/2Previous  Index  NextResearch Highlights[Vol. 34]Atomically Thin Perovskites Boost for Future Electronics26 Dec, 2017WPI-MANA has developed the world's highest performance dielectric nanofilms usingatomically thin perovskites. This technology may revolutionize the next-generation ofelectronics.This research was conducted by a WPI-MANA research group led by Principal Investigator MinoruOsada and Director Takayoshi Sasaki of WPI-MANA at NIMS. Electronic devices are getting smallerall the time, but there is a limit to how small they can get using current materials and technology.High-κ dielectric materials may be the key for developing electronic devices of the future.Minoru Osada and colleagues created high-performance dielectric nanofilms using 2D perovskitenanosheets (Ca2Nam−3NbmO3m+1; m = 3–6) as building blocks. Perovskite oxides offertremendous potential for controlling their rich variety of electronic properties including high-κ dielectric and ferroelectric.The researchers demonstrated the targeted synthesis of nanofilms composed of 2D perovskitenanosheets in a unit-cell-upon-unit-cell manner. In this unique system, perovskite nanosheetsenable precise control over the thickness of the perovskite layers in increments of ~0.4 nm (oneperovskite unit) by changing m, and such atomic layer engineering enhances the high-κ dielectricresponse and local ferroelectric instability. The m = 6 member (Ca2Na3Nb6O19) attained thehighest dielectric constant, εr = ~470, ever realized in all known dielectrics in the ultrathin regionof less than 10 nm.https://www.nims.go.jp/mana/research/highlights/vol33.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol35.html2022/04/04 10:08 Atomically Thin Perovskites Boost for Future Electronics| MANAhttps://www.nims.go.jp/mana/research/highlights/vol34.html 2/2Perovskite nanosheets are of technological importance for exploring high-κ dielectrics in 2Dmaterials, which have great potential in electronic applications such as memories, capacitors, andgate devices. Notably, perovskite nanosheets afforded high capacitances by relying on high-κ values at a molecular thickness. Ca2Na3Nb6O19 exhibited an unprecedented capacitance densityof approximately 203 μF cm-2, which is about three orders of magnitude greater than that ofcurrently available ceramic condensers, opening a route to ultra-scaled high-density capacitors.These results provide a strategy for achieving 2D high-κ dielectrics/ferroelectrics for use in ultra-scaled electronics and post-graphene technology.Reference"Atomic Layer Engineering of High‑κ Ferroelectricity in 2D Perovskites"Bao-Wen Li, Minoru Osada, Yoon-Hyun Kim, Yasuo Ebina, Kosho Akatsuka, and Takayoshi SasakiJournal : J. Am. Chem. Soc. 139, 10868−10874 (2017)DOI : 10.1021/jacs.7b05665AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jphttps://samurai.nims.go.jp/profiles/osada_minoru?locale=enhttps://samurai.nims.go.jp/profiles/ebina_yasuo?locale=enhttps://samurai.nims.go.jp/profiles/sasaki_takayoshi?locale=enhttps://pubs.acs.org/doi/abs/10.1021/jacs.7b05665