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[[Vol. 29]Tuning Magnetic Properties for Better Data Storage _ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/67a110a0-db2c-48a1-bb20-dc7573b2e728/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.29] Tuning Magnetic Properties for Better Data Storage](https://mdr.nims.go.jp/datasets/78712d43-0285-4193-9c2a-4eac98119029)

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2022/04/04 10:12 Tuning Magnetic Properties for Better Data Storage | MANAhttps://www.nims.go.jp/mana/research/highlights/vol29.html 1/2Previous  Index  NextResearch Highlights[Vol. 29]Tuning Magnetic Properties for Better Data Storage6 Dec, 2016New high-density data storage and spintronic devices could be achieved by reversiblycontrolling the electrical and magnetic properties of thin filmsFigure: Schematic showing the chemical basis for a novel redox device that hasbeen made by WPI-MANA researchers. The electrical and magnetic properties ofthe device can be adjusted and reversed by adding or removing lithium ions(LI+) from a layer of magnetite (Fe3O4).The ever-increasing amounts of electronic data that we generate in our personal and professionallives require new storage technologies that can fit lots of data into small physical spaces. The mostpromising solutions include solid-state redox devices, which work by controlling the magneticproperties of materials. By carefully adjusting the chemical composition of ferromagnetic thin films,researchers succeeded in tuning reversible magnetic properties, which can be applied to next-generation high density data storage enabling low power consumption.Now, Tsuchiya, Terabe, and Aono at the International Center for Materials Nanoarchitectonics,NIMS and co-workers have developed a new solid-state device in which several magnetic andelectrical properties can be changed and reversed by inserting and removing ions. The teambelieves that their device could pave the way for spintronics — novel devices that exploit not onlythe charges on electrons but also the intrinsic angular momentum, or spin, that is predicted byquantum mechanics.The new device contains a thin film made from the iron oxide magnetite (Fe3O4) next to a layer oflithium silicate. Magnetite holds particular interest for spintronics, because it is predicted to be ahalf-metal, meaning that it conducts only electrons of one particular spin state. When thehttps://www.nims.go.jp/mana/research/highlights/vol28.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol30.html2022/04/04 10:12 Tuning Magnetic Properties for Better Data Storage | MANAhttps://www.nims.go.jp/mana/research/highlights/vol29.html 2/2researchers apply voltages across certain parts of their device, they can insert or remove lithiumions into the magnetite, thereby changing the electrical conductivity, magnetization, andmagnetoresistance (the dependence of electrical resistance on an external magnetic field) of thethin film.Reference"In situ tuning of magnetization and magnetoresistance in Fe3O4 thin film achieved with all-solid-state redox device"Takashi Tsuchiya, Kazuya Terabe, Masanori Ochi, Tohru Higuchi, Minoru Osada, YoshiyukiYamashita, Shigenori Ueda, and Masakazu AonoJournal : ACS Nano 10, 1655-1661 (2016).DOI : 10.1021/acsnano.5b07374AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jphttps://samurai.nims.go.jp/profiles/tsuchiya_takashi?locale=enhttps://samurai.nims.go.jp/profiles/terabe_kazuya?locale=enhttps://samurai.nims.go.jp/profiles/osada_minoru?locale=enhttps://samurai.nims.go.jp/profiles/aono_masakazu?locale=enhttps://pubs.acs.org/doi/10.1021/acsnano.5b07374