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Zhaowei Zhang, Naizhou Wang, Ning Cao, Aifeng Wang, Xiaoyuan Zhou, [Kenji Watanabe](https://orcid.org/0000-0003-3701-8119), [Takashi Taniguchi](https://orcid.org/0000-0002-1467-3105), Binghai Yan, Wei-bo Gao

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[Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4](https://mdr.nims.go.jp/datasets/bda6bd86-c520-44cc-85b8-13cbd66f4aa2)

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Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4Article https://doi.org/10.1038/s41467-022-33705-yControlled large non-reciprocal chargetransport in an intrinsic magnetic topologi-cal insulator MnBi2Te4Zhaowei Zhang 1,9, Naizhou Wang1,9, Ning Cao2, Aifeng Wang 2,XiaoyuanZhou 2, KenjiWatanabe 3, Takashi Taniguchi 4, Binghai Yan 5 &Wei-bo Gao 1,6,7,8Symmetries, quantum geometries and electronic correlations are among themost important ingredients of condensed matters, and lead to nontrivialphenomena in experiments, for example, non-reciprocal charge transport. Ofparticular interest is whether the non-reciprocal transport canbemanipulated.Here, we report the controllable large non-reciprocal charge transport in theintrinsic magnetic topological insulator MnBi2Te4. The current directionrelevant resistance is observed at chiral edges, which is magnetically switch-able, edge position sensitive and stacking sequence controllable. Applyinggate voltage can also effectively manipulate the non-reciprocal response. Theobservation and manipulation of non-reciprocal charge transport reveals thefundamental role of chirality in charge transport of MnBi2Te4, and pave waysto develop van der Waals spintronic devices by chirality engineering.Van der Waals materials provide an interesting platform to study theintertwined magnetism and band topology1,2, and a series of exoticstates ofmatter emerge. Among them, quantum anomalous Hall effect(QAHE) attracted a lot of attention. For QAHE, the most interestingpart would be quantized plateau of Hall conductance as well as thedissipationless chiral edge transport channels that emerge at theChern insulator states. Besides, the chirality of the edge transport, aswell as themagnetization, play anessential role in dissipative transportregimes, for instance, non-reciprocal charge transport behaviors2–6.Non-reciprocal response, manifesting as the resistance differencebetween positive and negative current, is the central process to con-vert an oscillating electromagnetic field to a direct current, in otherwords, rectification. The demand of low-power, high-frequency recti-fiers inspires studies on non-reciprocal charge transport in newmaterial systems, such as non-centrosymmetric crystals7–12, topologi-cal insulators13–17, magnet/superconductor interfaces18,19, topologicalinsulator/superconductor interfaces20 and magnet/topological insu-lator interfaces3,21,22. Especially, a large non-reciprocal charge transportmediated by quantum anomalous Hall edge states has been observedin magnetically doped topological insulator14. As compared to tradi-tional magnetically doped topological insulators, the intrinsic mag-netic topological insulator MnBi2Te4 provides more robust QAHE,since it does not introduce magnetic impurities and remove the needof precise control of element species. Due to the ferromagneticintralayer coupling and antiferromagnetic interlayer coupling,MnBi2Te4 also hosts rich magnetic phases, including fully compen-sated antiferromagnetic, uncompensated antiferromagnetic and spin-aligned ferromagnetic states. Externalmagneticfield turns out to beanReceived: 28 April 2022Accepted: 28 September 2022Check for updates1Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore 637371, Singapore.2Low Temperature Physics Laboratory, College of Physics and Center for QuantumMaterials and Devices, Chongqing University, 401331 Chongqing, China.3Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. 4International Center for MaterialsNanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan. 5Department of Condensed Matter Physics, WeizmannInstitute of Science, Rehovot 7610001, Israel. 6The Photonics Institute and Centre for Disruptive Photonic Technologies, Nanyang Technological University,Singapore 637371, Singapore. 7Centre for Quantum Technologies, National University of Singapore, Singapore, Singapore. 8MajuLab, International JointResearch Unit, UMI 3654, CNRS, UniversitéCôte d’Azur, Sorbonne Université, National University of Singapore, Nanyang Technological University,Singapore, Singapore. 9These authors contributed equally: Zhaowei Zhang, Naizhou Wang. e-mail: binghai.yan@weizmann.ac.il; wbgao@ntu.edu.sgNature Communications |         (2022) 13:6191 11234567890():,;1234567890():,;http://orcid.org/0000-0002-0603-6763http://orcid.org/0000-0002-0603-6763http://orcid.org/0000-0002-0603-6763http://orcid.org/0000-0002-0603-6763http://orcid.org/0000-0002-0603-6763http://orcid.org/0000-0003-2425-3259http://orcid.org/0000-0003-2425-3259http://orcid.org/0000-0003-2425-3259http://orcid.org/0000-0003-2425-3259http://orcid.org/0000-0003-2425-3259http://orcid.org/0000-0003-1088-0809http://orcid.org/0000-0003-1088-0809http://orcid.org/0000-0003-1088-0809http://orcid.org/0000-0003-1088-0809http://orcid.org/0000-0003-1088-0809http://orcid.org/0000-0003-3701-8119http://orcid.org/0000-0003-3701-8119http://orcid.org/0000-0003-3701-8119http://orcid.org/0000-0003-3701-8119http://orcid.org/0000-0003-3701-8119http://orcid.org/0000-0002-1467-3105http://orcid.org/0000-0002-1467-3105http://orcid.org/0000-0002-1467-3105http://orcid.org/0000-0002-1467-3105http://orcid.org/0000-0002-1467-3105http://orcid.org/0000-0003-2164-5839http://orcid.org/0000-0003-2164-5839http://orcid.org/0000-0003-2164-5839http://orcid.org/0000-0003-2164-5839http://orcid.org/0000-0003-2164-5839http://orcid.org/0000-0003-3971-621Xhttp://orcid.org/0000-0003-3971-621Xhttp://orcid.org/0000-0003-3971-621Xhttp://orcid.org/0000-0003-3971-621Xhttp://orcid.org/0000-0003-3971-621Xhttp://crossmark.crossref.org/dialog/?doi=10.1038/s41467-022-33705-y&domain=pdfhttp://crossmark.crossref.org/dialog/?doi=10.1038/s41467-022-33705-y&domain=pdfhttp://crossmark.crossref.org/dialog/?doi=10.1038/s41467-022-33705-y&domain=pdfhttp://crossmark.crossref.org/dialog/?doi=10.1038/s41467-022-33705-y&domain=pdfmailto:binghai.yan@weizmann.ac.ilmailto:wbgao@ntu.edu.sgeffective tool to manipulate suchmagnetic states as well as the chargetransport. Besides, the van der Waals nature of MnBi2Te4 makes itpossible to realize more attractive phenomena by changing stackingsequence or assembling heterostructure23–30.In our current manuscript, we have demonstrated controllablelarge non-reciprocal charge transport in an intrinsic magnetic topo-logical insulator MnBi2Te4. Due to its unique antiferromagnetic van-der-Waals structure, the large non-reciprocal charge transport inMnBi2Te4 can be manipulated by gate voltage, magnetic field andseptuple layer numbers. The observation of tunable non-reciprocalresistance may help to develop multifunctional spintronic devices,such as magnetic switchable diodes and high-frequency rectification.ResultsChiral edge states revealed by quantum anomalous Hall effectFirst, we show the characterization of MnBi2Te4 devices. The devicestructure is shown in Fig. 1a. In details, MnBi2Te4 thin flakes areobtained by Al2O3-assisted exfoliation31,32. The sample thickness isdetermined by optical contrast as shown in Supplementary Fig. 1. Wehave chosen four 5-SL (Device 1, Device 2, Device 4, and Device 5) andone 4-SL (Device 3) MnBi2Te4 in our measurements. In the main text,we show the results from Device 1 and Device 3. Au electrodes arethermally deposited through stencil masks, which avoids the degra-dation from the chemical or ambient exposure and ensures the highdevice quality. The Si/SiO2 bottom gate or the graphite/hBN top gateworks as gate. We measure the longitudinal resistance of a 5-SLMnBi2Te4 as a function of temperature as shown in Fig. 1b. The Néeltemperature is around 23 K, which is indicated by the resistance peak.The temperature dependent resistanceof other twodevices are shownin Supplementary Fig. 2a, b. Three devices display similar Néeltemperature.To reveal the chiral edge states in MnBi2Te4, we tune the Fermilevel to the charge neutrality point (CNP). 5-SL MnBi2Te4 ownsuncompensated magnetic moments under zero external magneticfield when temperature below the Néel temperature, as shown inFig. 1c, d.We also show the fully compensated antiferromagnetic statesof a 4-SLMnBi2Te4device in Supplementary Fig. 4d.Wenote that in theideal quantum anomalous Hall state, only chiral edge states contributeto the charge transport and the longitudinal resistance becomes zero.However, longitudinal resistance in our MnBi2Te4 samples does notvanish. For our Device 2 and Device 3, the nearly quantized Hallresistance of 0.977 h/e2 and 0.945 h/e2 have been achieved (Supple-mentary Fig. 2 and Supplementary Fig. 3).Large non-reciprocal resistance in MnBi2Te4Next, we study the non-reciprocal charge transport in MnBi2Te4 devi-ces. As shown in Fig. 2a, when the current is injected in oppositedirections, charge carriers at the same edge are scattered by the chiralstate in different ways. This leads to a difference in resistance undercurrent reversal, so-called non-reciprocal charge transport behaviors.Here, we adopt the phenomenological model33 to describe the currentrelevant resistance:Vxx = iRxx = iR0 + γR0i2 M̂ × P̂� �� î, ð1Þwhere R0 is the resistance that does not change with the current, γ isthe constant that characterizes the strength of the non-reciprocalcharge transport effect, M̂ is the magnetization direction of theMnBi2Te4, P̂ is the edge charge dipole which is opposite on two edges,and î is the current direction. We study the non-reciprocal chargetransport bymeasuring the resistance difference between positive andnegative currents in a 5-SL MnBi2Te4 as described in Fig. 2a. The 10μAand −10μA DC current is injected to the device respectively, and wemeasure the longitudinal resistance at the right edge at 11 K. A top gatevoltage of −2 V is applied, atwhich the Fermi level is around theCNP. InFig. 2b, we plot the resistance difference as a function of the magneticfield. The resistance difference ΔR is defined as RL(10μA) − RL(−10μA)and the value is antisymmetrized for M. The raw data are shown inSupplementary Fig. 5. A large resistance difference is observed,reaching the magnitude of 100Ω. Such a resistance difference cannotoriginate from thermal effect as we discuss in Supplementary Note 5.We then compare the non-reciprocity in MnBi2Te4 and Cr-doped(Bi,Sb)2Te3 by4R=R0=I. Under 7 Tmagnetic field, the4R=R0=I reaches2911 A−1 in MnBi2Te4, which is comparable to 2600A−1 in Cr-doped(Bi,Sb)2Te314.Since the non-reciprocal response are originated from the quad-ratic term of current, we adopt the second-harmonic voltage mea-surements with small AC driven current IRMS =5μA to obtain bettersignal-to-noise ratio and rule out other high-order effects. With thebase frequency of the driven current set as 17.777Hz, the voltage dropis written as:Vxx =ffiffiffi2psin ωtð ÞR0 + γR0i2 1� cos 2ωtð Þð Þ M̂ × P̂� �� î: ð2ÞThe voltage with the frequency of 35.554Hz reveals the strengthof the non-reciprocal charge transport effect. Here, the non-reciprocalresistance is defined as R2ωxx =V2ωxx =IRMS, where V 2ωxx is the second-harmonic voltagemeasuredby the lock-in amplifier. In Fig. 2c,we showthe non-reciprocal resistance as a function of magnetic field, which isantisymmetrized for M. The magnitude of γ is estimated byγ =ffiffiffi2pR2ωxx =ðR0 � IRMSÞ. At 11 K, the γ is 4.5 × 103 A−1 under the magneticfield of 7 T, and 1.4 × 103 A−1 without the external magnetic field. Wealso study the currentmagnitude dependent non-reciprocal resistanceas shown in Supplementary Fig. 8. The non-reciprocal resistance scaleslinearly with the AC current magnitude, which agrees well with ourphenomenological model.Remarkably, the A-type antiferromagnetic order unlocks compli-cated magnetic states and it deeply influences the non-reciprocalresistance. Applying the magnetic field aligns magnetic momentsalong with the external field. By controlling the magnetization, theSi/SiO2 Al2O3 MnBi2Te4hBNgraphitea bc d-5 0 5-101Rxy (h/e2 )�0H (T)-5 0 50.10.2Rxx (h/e2 )�0H (T)0 30 60456Rxx (k�)T (K)TN = 23 KFig. 1 | The characterization of MnBi2Te4 devices. a The schematic structure ofthe MnBi2Te4 device. The MnBi2Te4 thin flakes are obtained by Al2O3-assistedexfoliation method. Au electrodes are thermally deposited through stencil masks.Si/SiO2 and graphite/hBN work as bottom and top gate, respectively. b Thetemperature-dependent resistance of a 5-SL MnBi2Te4 (Device 1) device. The Néeltemperature (TN) is indicated by a resistance peak around 23K. c, d The transverseand longitudinal resistance as a functionof themagneticfield at 1.7 K for Device 1. Atop gate voltage of −2 V is applied to tune the Fermi energy to the chargeneutrality point.Article https://doi.org/10.1038/s41467-022-33705-yNature Communications |         (2022) 13:6191 2bulk/edge conduction ratio ismanipulated. Meanwhile, the chirality ofthe edge transport can be switched by reversing magnetic moments,leading to opposite non-reciprocity at opposite magnetic states. Thefinite non-reciprocal resistance is observed without external magneticfield and shows the sign reversal under magnetic states ↑↓↑↓↑ and↓↑↓↑↓ due to the uncompensated magnetic moments in the 5-SLMnBi2Te4. Multiple non-reciprocal resistance plateaus undermagneticfield are also revealed including fully spin polarized states↑↑↑↑↑ and↓↓↓↓↓. The abundant magnetic field controlled non-reciprocalresistance states are absent in other non-reciprocal system, such asmagnetically doped topological insulator.We show the non-reciprocalresistance in Device 2 in Supplementary Fig. 6. Apart from magneticfield, non-reciprocal resistance in MnBi2Te4 is edge position sensitive.In Fig. 2d, we show the non-reciprocal resistance as a function ofmagnetic field measured at the left edge of the device. Non-reciprocalresistance that measured at two different edges shows the closemagnitude, but the sign is reversed. This behavior indicates the brokeninversion symmetry of the edge transport and the edge–charge dipoleP̂ at two edges is opposite.Magneticmoments of 4-SLMnBi2Te4 are fully compensatedunderzero magnetic field, for which the non-reciprocal charge transport in4-SL MnBi2Te4 shows different behaviors compared with that in 5-SLMnBi2Te4. In Fig. 3a, b, we show the field dependent non-reciprocity γof 5-SL and 4-SL MnBi2Te4 devices, respectively. The non-reciprocalresistance for both devices aremeasured at the right edgewith slightlyelectron doping. We find in high-magnetic-field regime, non-reciprocity of 5-SL MnBi2Te4 and 4-SL exhibit the same order of mag-nitude. However, under zero magnetic field, non-reciprocal resistancenearly vanishes in 4-SL MnBi2Te4 devices. This is consistent with thephenomenological model for M = 0 and the current relevant termvanishes. The vanishednon-reciprocitywith zeromagnetization canbefurther confirmed by measuring the non-reciprocal resistance atparamagnetic states. Increasing the temperature above the Néel tem-perature results in thebreakdownof chiral edge states evenunder highmagnetic field, leading to vanished non-reciprocal resistance, which isshown in Supplementary Fig. 9.Gate tunability of non-reciprocal charge transportFinally, we demonstrate the gate tunability of the non-reciprocalcharge transport in MnBi2Te4. In Fig. 4, we show the gate dependentR2ωL and R2ωR at 11 K with various top gate voltage. We find that both themagnitude and sign of the R2ωL=R can be tuned by applying gate voltage.In high field regime, R2ωL at the spin state↑↑↑↑↑ is tuned frompositiveto negative when gate voltage is scanned from −5 V to 5 V, while R2ωRshows the opposite trend. The gate tunability is also valid under zeromagnetic field, where the loop chirality is switched while scanning topgate voltage from −5 to 5 V. We note the gate voltage does not switchthe ↑↓↑↓↑ and ↓↑↓↑↓ states as we discussed in SupplementaryNote 9. Besides, opticalmagnetic circular dichroism (MCD) reveals themagnetization is gate voltage independent in the field regime of −1 toFig. 2 | Non-reciprocal charge transport in a 5-SL MnBi2Te4. a Schematic illus-trations of current direction dependent backscattering of edge transport. Thechiral edge states are indicated by green arrows. b Resistance difference betweenpositive and negative current as a function of themagnetic field. Themeasurementis performed at 11 Kwith top gate voltage of −2 V. c,dThe non-reciprocal resistancemeasured at the right edge and left edge, respectively. The injected current IRMS is5μA. The measurements are performed at 11 K with top gate voltage of −2 V. Insetsshow schematic illustrations of the interplaybetweenchiral edge states and2Dbulktransport channels (e.g., surface states) at different magnetic states.a b-6 -3 0 3 6-4-2024�  (103  A-1)�0H (T)-6 -3 0 3 6-4-2024�  (103  A-1)�0H (T)Fig. 3 | Non-reciprocal charge transport in 5-SL MnBi2Te4 and 4-SL MnBi2Te4.aMagnetic field dependent non-reciprocity for a 5-SL MnBi2Te4 device. A top gatevoltage of 3 V is applied, and the sample is slightly electron doped. Insets show theschematic illustrations of two magnetic states under zero magnetic field.b Magnetic field dependent non-reciprocity for a 4-SL MnBi2Te4 device. The ACdriven current IRMS = 1μA is adopted in measurements. The measurements areperformed at the temperature of 11 K. A top gate voltage of 3 V is applied, and thesample is slightly electron doped. Insets show schematic illustrations of two mag-netic states under zero magnetic field.Article https://doi.org/10.1038/s41467-022-33705-yNature Communications |         (2022) 13:6191 31 T. Therefore, it is the change of Fermi energy that affects the non-reciprocal charge transport.To provide more insights into the effect of gate voltage on thenon-reciprocal charge transport, we summarize the gate dependenceof longitudinal resistance and non-reciprocal resistance in Fig. 5. Asshown in Fig. 5a, the longitudinal resistance under zero magnetic fieldshows themaximum at the top gate voltage of −2 V.We also show signreversal of the R2ωL and R2ωR while scanning gate voltage at differentmagnetic states in Fig. 4b, c. Further study about magnetic-field-direction dependent non-reciprocal charge transport is shown inSupplementary Fig. 13. A dip ofR2ωR when theRxy reaches themaximumvalue under an out-of-plane magnetic field is observed in Device 4,indicating that the coexistence of chiral edge transport and bulktransport plays an important role in the non-reciprocal chargetransport.DiscussionThe remarkable features of non-reciprocal resistance can be rationa-lized by a simple band structure scenario on the QAHE edge. At theCNP, we should note that our devices deviate slightly from the fullyinsulating state and Rxy being smaller than h/e2 (see Fig. 1c). Therefore,one chiral edge state and trivial edge states (including subbands fromthe 2D bulk) coexist, from which the local edge transport is detectedby two voltage electrodes. Apart from MnBi2Te4, prior studies onmagnetically doped topological insulators show the small finite long-itudinal resistance in presence of nonchiral edge states and residualbulk states34. In the ideal QAHE case, the pure chiral edge state wouldnot lead to non-reciprocal transport, since its Rxx =0. In the weaklydoped QAHE which is the case in present work, chiral edge statehybridizes strongly with trivial edge states, leading to asymmetricdispersion between opposite momenta, i.e., different magnitudes ofFermi velocities along opposite directions. This velocity asymmetrycoincideswith the fact that both inversion symmetry and time-reversalsymmetry are broken on the edge. Suppose a finite relaxation time, thedirection-dependent mean free path comes with direction-dependentFermi velocity and eventually leads to direction-dependent resistance.Moreover, the induced resistance change is maximized near the bandedge of trivial states, explaining the large non-reciprocal effect nearthe CNP6. Further, the velocity asymmetry flips order between con-duction and valence bands, or when reversing the magnetism orchanging edge sides, rationalizing related experimental sign changes.In summary, we have demonstrated the non-reciprocal chargetransport in an intrinsic magnetic topological insulator MnBi2Te4. Thebroken inversion symmetry and broken time-reversal symmetry in thedissipative charge transport regime are key components of the non-reciprocity in our study. By manipulating the symmetry breaking, theseptuple layer dependent non-reciprocity turns out to bemagneticallycontrollable and edge position sensitive. Meanwhile, the observedVg = -5 V Vg = -2 V Vg = -1 V Vg = 0 V Vg = 1 V Vg = 5 V-5 0 5-100-50050100R2� L (�)-5 0 5 -5 0 5 -5 0 5�0H (T)-5 0 5 -5 0 5Vg = -5 V Vg = -2 V Vg = -1 V Vg = 0 V Vg = 1 V Vg = 5 V-5 0 5-100-50050100R2� R (�)-5 0 5 -5 0 5 -5 0 5�0H (T)-5 0 5 -5 0 5abFig. 4 | Non-reciprocal resistance at various top gate voltages. a Non-reciprocal resistance as a function of magnetic field measured at the left edge. b Non-reciprocal resistance as a function of magnetic field measured at the right edge.-4 -2 0 2 41234Rxx (k�)Vg (V)CNP-4 -2 0 2 4-100-50050100R2 � L (�)Vg (V) ����� ����� �����-4 -2 0 2 4-100-50050100R2 � R (�)Vg (V) ����� ����� �����a b cFig. 5 | Gate tunability of non-reciprocal resistance at differentmagnetic statesin 5-SL MnBi2Te4. a Longitudinal resistance of the 5-SL MnBi2Te4 as a function ofthe top gate voltage under zero magnetic field. The measurement is carried out at11 K. The resistance shows amaximum at the charge neutrality point (CNP) with thetop gate voltage of −2 V. b, c Non-reciprocal resistance measured at left edge andright edge of the 5-SL MnBi2Te4, respectively. Different curves show the non-reciprocal resistance at spin states of ↓↓↓↓↓, ↓↑↓↓↓ and ↓↑↓↑↓.Article https://doi.org/10.1038/s41467-022-33705-yNature Communications |         (2022) 13:6191 4non-reciprocal resistance can be tuned by gate voltage. We ascribe theobserved non-reciprocal resistance to the interaction between chiraledge states and dissipative states. Our finding paves the way to buildnext-generation spintronic devices though chirality engineering.MethodsDevice fabricationHigh-quality MnBi2Te4 crystals are grown by flux methods. MnBi2Te4thin flakes are obtained by Al2O3 assisted exfoliation method. Wedetermine the thickness of MnBi2Te4 thin flakes by optical contrast ofcaptured optical images of MnBi2Te4/Al2O3 on PDMS stamps.MnBi2Te4 thin flakes, as well as the Al2O3 film are then transferred onSi/SiO2 substrates. Au electrodes are thermally deposited throughstencil masks. Finally, the hBN and graphite are transferred on top ofthe selectedMnBi2Te4 flake. The fabrication processes before coveringhBN and graphite are performed in a N2-filled glove box.Electrical measurementsDC transport measurements are performed by a current source(Keithley 6221) and a nanovoltmeter (Keithley 2182A). The top gatevoltage and bottom gate voltage are applied by a dual-channel sour-cemeter (Keithley 2636B). AC transport measurements are performedby a current source (Keithley 6221) and a lock-in amplifier (ZurichMFLI). Allmeasurements are carried out with a Cryomagnetic cryostat.Data availabilityThe data that support the findings of this study are available from thecorresponding authors upon reasonable request.References1. Kurebayashi, H., Garcia, J. H., Khan, S., Sinova, J. & Roche, S.Magnetism, symmetry and spin transport in van der Waals layeredsystems. Nat. Rev. Phys. 4, 150–166 (2022).2. Ideue, T. & Iwasa, Y. Symmetry breaking and nonlinear electrictransport in van der Waals nanostructures. Annu. Rev. Condens.Matter Phys. 12, 201–223 (2021).3. Tokura, Y. & Nagaosa, N. Nonreciprocal responses from non-centrosymmetric quantummaterials. Nat. Commun. 9, 1–14 (2018).4. Liu, Y., Xiao, J., Koo, J. & Yan, B. Chirality-driven topological elec-tronic structure of DNA-like materials. Nat. Mater. 20,638–644 (2021).5. Rikken, G., Fölling, J. & Wyder, P. Electrical magnetochiral aniso-tropy. Phys. Rev. Lett. 87, 236602 (2001).6. Liu, Y., Holder, T. & Yan, B. 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Lett. 125,126801 (2020).AcknowledgementsThis work is supported by the Singapore National Research Foundationthrough its Competitive Research Program (CRP Award No. NRF-CRP22-2019-0004 andQuantum engineering program) and SingaporeMinistryof Education (MOE2016-T3-1-006 (S)). B.Y. acknowledges the financialsupport by the European Research Council (ERC Consolidator Grant“NonlinearTopo,”No. 815869) and the ISF - Personal ResearchGrant (No.2932/21).Work atChongqingUniversitywasfinancially supportedby theNational Natural Science Foundation of China (Grants No. 12004056,No. 52071041). K.W. and T.T. acknowledge support from the JSPSKAKENHI (Grant Numbers 19H05790, 20H00354 and 21H05233).Author contributionsW.-b.G., and B.Y. conceived the experiment. N.C., A.W., and X.Z. syn-thesized the MnBi2Te4 crystal. T.T. and K.W. provided the hexagonalArticle https://doi.org/10.1038/s41467-022-33705-yNature Communications |         (2022) 13:6191 5boron nitride samples. Z.Z. and N.W. fabricated the MnBi2Te4 devicesand carried out the electrical measurements. B.Y. and W.-b.G. per-formed theoretical analysis. Z.Z., N.W., B.Y, and W.-b.G wrote themanuscriptwith extensive input from the other authors.W.-b.G. and B.Y.supervised the project.Competing interestsThe authors declare no competing interests.Additional informationSupplementary information The online version containssupplementary material available athttps://doi.org/10.1038/s41467-022-33705-y.Correspondence and requests for materials should be addressed toBinghai Yan or Wei-bo Gao.Peer review information Nature Communications thanks the anon-ymous reviewer(s) for their contribution to the peer review of thiswork. Peer reviewer reports are available.Reprints and permission information is available athttp://www.nature.com/reprintsPublisher’s note Springer Nature remains neutral with regard to jur-isdictional claims in published maps and institutional affiliations.Open Access This article is licensed under a Creative CommonsAttribution 4.0 International License, which permits use, sharing,adaptation, distribution and reproduction in any medium or format, aslong as you give appropriate credit to the original author(s) and thesource, provide a link to the Creative Commons license, and indicate ifchanges were made. The images or other third party material in thisarticle are included in the article’s Creative Commons license, unlessindicated otherwise in a credit line to the material. 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To view a copy of this license, visit http://creativecommons.org/licenses/by/4.0/.© The Author(s) 2022Article https://doi.org/10.1038/s41467-022-33705-yNature Communications |         (2022) 13:6191 6https://doi.org/10.1038/s41467-022-33705-yhttp://www.nature.com/reprintshttp://creativecommons.org/licenses/by/4.0/http://creativecommons.org/licenses/by/4.0/ Controlled large non-reciprocal charge transport in an intrinsic magnetic topological insulator MnBi2Te4 Results Chiral edge states revealed by quantum anomalous Hall effect Large non-reciprocal resistance in MnBi2Te4 Gate tunability of non-reciprocal charge transport Discussion Methods Device fabrication Electrical measurements Data availability References Acknowledgements Author contributions Competing interests Additional information