# Fileset

[Supporting Information_MLiH3 Paper_EF.pdf](https://mdr.nims.go.jp/filesets/63eaf654-f149-4636-9bc2-e091f1c7ee75/download)

## Creator

Erika Fukushi, Fumiya Mori, Kota Munefusa, [Takayuki Harada](https://orcid.org/0000-0002-8657-2258), Hiroyuki Oguchi

## Rights

This document is the unedited Author’s version of a Submitted Work that was subsequently accepted for publication in ACS Applied Energy Materials, copyright © 2024 American Chemical Society after peer review. To access the final edited and published work see https://doi.org/10.1021/acsaem.3c03188[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Epitaxial Thin Film Growth of Perovskite Hydrides <i>M</i>LiH<sub>3</sub> (<i>M</i> : Sr, Ba) for the Study of Intrinsic Hydride-Ion Conduction](https://mdr.nims.go.jp/datasets/4ed5dfcf-ff07-44c8-b340-18b12c612151)

## Fulltext

Template for Electronic Submission to ACS Journals  1  Supporting Information  Epitaxial Thin Film Growth of Perovskite Hy-drides MLiH3 (M : Sr, Ba) for The Study of Intrin-sic Hydride-Ion Conduction  Erika Fukushi1, Fumiya Mori1, Kota Munefusa1, Takayuki Harada2 and Hiroyuki Oguchi1* 1Department of Applied Chemistry, Graduate School of Engineering and Science, Shibaura Insti-tute of Technology, 3-7-5 Toyosu, Koto-ku, Tokyo, Japan 2Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Sci-ence, 1-1 Namiki, Tsukuba-shi, Ibaraki, Japan  *E-mail: h-oguchi@shibaura-it.ac.jp     2      Figure S1. Schematic of the in-plane ionic conductivity measurement setup: Mo comb-shpaed electrode consists of about 10 parallel teeth (the number of teeth was varied depending on the sample size), each with an overlap length of 3 mm and a width and spacing of 0.1 mm. To heat the film, a Si plate (conductivity: 0.01-0.02 Ωcm) placed at the bottom of the substrate was used as a resistance heater. Assuming temperature equilibrium between the Si plate and the sample, the sample temperature was determined by measuring the temperature of the Si plate using a radiation thermometer (TMHX-TME0050(H), Nihon Sensor Co.)   3      Figure S2. 2θ/θ XRD diffraction patterns of BaLiH3 thin films with different reaction gases. Diffraction peaks attributed to BaLiH3 appear in all gas conditions.   4                 Figure S3. Atomic arrangement of the epitaxial thin film on (a) MgAl2O4 and (b) LaAlO3 sub-strate as predicted from the XRD diffraction pattern shown in Figure 6.   5      Figure S4. (a) SEM cross section of SrLiH3 epitaxial thin film grown on MgAl2O4 substrate and EDS mapping for (b) Sr, (c) O, (d) Mg, and (e) Al elements. Inset shows surface SEM image.