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[The Innovation---Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors.pdf](https://mdr.nims.go.jp/filesets/5ef19f01-da56-4ba7-9557-3bb4e11bbcdb/download)

## Creator

Xinzhi Wu, [Takao Mori](https://orcid.org/0000-0003-2682-1846)

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[Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International](https://creativecommons.org/licenses/by-nc-nd/4.0/)

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[Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors](https://mdr.nims.go.jp/datasets/f3345891-42e4-42b3-8eaa-f6991bd9b33b)

## Fulltext

Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductorsCOMMENTARYSub-lattice amorphization as a new driver of room temperatureplasticity in inorganic semiconductorsXinzhi Wu1 and Takao Mori1,2,*1Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS), Tsukuba 305-0044, Japan2Graduate School of Pure and Applied Science, University of Tsukuba, Tsukuba 305-8671, Japan*Correspondence: mori.takao@nims.go.jpReceived: February 22, 2025; Accepted: March 29, 2025; Published Online: April 2, 2025; https://doi.org/10.1016/j.xinn.2025.100891ª 2025 The Author(s). Published by Elsevier Inc. on behalf of Youth Innovation Co., Ltd. This is an open access article under the CC BY-NC-ND license (http://creativecommons.org/licenses/by-nc-nd/4.0/).Citation: Wu X. and Mori T. (2025). Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors. The Innovation 6(6), 100891.BACKGROUNDMetals exhibit excellent ductility due to isotropic metallic bonding, enablinglarge-scale plastic deformation through dislocationmotion. In contrast, inorganicsemiconductors, typically bonded via covalent or ionic interactions, possessstrong directional bonding that inhibits dislocation movement, rendering thembrittle at room temperature. This fundamental distinction constrains themanufacturing processes of these materials, necessitating subtractive tech-niques such as cutting, grinding, and etching. The ability to impartmetal-like plas-ticity to inorganic semiconductors would significantly enhance their manufactur-ability and expand their applications in flexible electronics, wearable devices, andbio-integrated technologies.1Since 2018, a class of inorganic semiconductors, including Ag2S,2 Bi2Te,3Mg3Bi2,4 etc., has been identified with room temperature plasticity, presentingnew opportunities for flexible semiconductor devices. However, the underlyingdeformation mechanisms vary significantly among these materials. A recentstudy by Wang et al., published in Nature Materials, unveils a previously unrecog-nized mechanism governing the exceptional plasticity of Ag2Te1-xSx (0.3% x%0.6): anion sub-lattice amorphization coupled with disorder-driven Ag ion diffu-Figure 1. Deformation mechanisms of metals, crystallllsion (Figure 1). This finding provides a fundamental understanding of plasticityin inorganic semiconductors and suggests new strategies for designing deform-able functional materials.5Through a combination of synchrotron-based X-ray diffraction (XRD), insitu transmission electron microscopy (TEM), and molecular dynamics simula-tions, Wang et al. at Zhejiang University elucidated the deformation behavior ofAg2Te1-xSx. Their results reveal that minor mechanical stress can trigger sub-lat-tice amorphization in the Te/S anion framework, enabling plastic strains withoutstructural collapse. The process, termed “iterative sub-lattice amorphization,” al-lows for extraordinary elongation (up to 10,150%) through a rolling-inducedamorphization-recrystallization cycle.Moreover, this work demonstrates that the intrinsic superionic conductivity ofAg2Te1-xSx plays a crucial role in its plasticity. Unlike conventional metals and al-loys, where dislocation-mediated deformation dominates, Ag2Te1-xSx deformsvia a unique mechanism wherein the rigid anion sub-lattice transforms into ametastable amorphous phase while maintaining local bonding integrity. Thismechanistic insight paves the way for the rational design of other plasticsemiconductors.ine, and amorphous inorganic bulk semiconductorsThe Innovation 6(6): 100891, June 2, 2025 1mailto:mori.takao@nims.go.jphttps://doi.org/10.1016/j.xinn.2025.100891http://creativecommons.org/licenses/by-nc-nd/4.0/http://crossmark.crossref.org/dialog/?doi=10.1016/j.xinn.2025.100891&domain=pdfwww.the-innovation.orgCOMMENTARYPROSPECTS AND CHALLENGESThe discovery of plasticity in inorganic semiconductors represents a signifi-cant breakthrough in materials science, yet several fundamental and appliedchallenges remain (Figure 1). First, while experimental results suggest thatrepeated rolling and annealing have a limited impact on performance, the under-lying mechanisms require further elucidation. A critical question is whethersimilar deformation-induced amorphization mechanisms apply to other superi-onic conductors. Addressing this issue could guide the design of next-generationmaterials with tailored mechanical and electronic properties.Second, the impact of plastic deformation on thermoelectric performance re-mains an open question. While amorphization enhances ductility, its effects oncarrier mobility and electrical transport properties remain insufficiently explored.Currently, the thermoelectric performance of these materials might requirefurther optimization, and the interplay between plasticity and thermoelectricproperties needs to be systematically investigated. Future studies could focuson strategies to synergistically enhance both plasticity and thermoelectric perfor-mance through compositional tuning or controlled processing.Third, a more comprehensive understanding of device integration challengesis essential. While this study demonstrates the feasibility of large-strain deforma-tion via rolling, the seamless incorporation of plastically deformable semiconduc-tors into existing device architectures—such as flexible electronics and wear-ables—remains an open question. In particular, the effects of plasticity onelectrode interface stability and operational reliability warrant furtherinvestigation.Despite these challenges, plastically deformable inorganic semiconductorsoffer vast technological opportunities. Potential applications range from flexiblethermoelectric devices and stretchable photovoltaics to reconfigurable optoelec-2 The Innovation 6(6): 100891, June 2, 2025tronics. In the long term, advancements in this field may pave the way for self-healing electronic circuits and bio-integrated implants that conform seamlesslyto dynamic biological environments.Moving forward, interdisciplinary collaboration among materials scientists,electrical engineers, and industrial researchers will be critical in unlocking thefull potential of these materials. By addressing current limitations and refiningprocessing methodologies, plastic inorganic semiconductors could play a trans-formative role in the future of flexible and wearable electronics.FUNDING AND ACKNOWLEDGMENTSThe authors acknowledge support from JST Mirai Large-Scale Program JPMJMI19A1.DECLARATION OF INTERESTSThe authors declare no competing interests.REFERENCES1. Mori, T. (2023). A flexible feature for the long-reigning thermoelectric champion bismuth tellu-ride. Nat. Nanotechnol. 18:1255–1256. DOI:https://doi.org/10.1038/s41565-023-01464-6.2. Shi, X., Chen, H., Hao, F. et al. (2018). Room-temperature ductile inorganic semiconductor.Nat. Mater. 17:421–426. DOI:https://doi.org/10.1038/s41563-018-0047-z.3. Lu, Y., Zhou, Y., Wang, W. et al. (2023). Staggered-layer-boosted flexible Bi2Te3 films with highthermoelectric performance. Nat. Nanotechnol. 18:1281–1288. DOI:https://doi.org/10.1038/s41565-023-01457-5.4. Zhao, P., Xue, W., Zhang, Y. et al. (2024). Plasticity in single-crystalline Mg3Bi2 thermoelectricmaterial. Nature 631:777–782. DOI:https://doi.org/10.1038/s41586-024-07621-8.5. Wang, Y., Li, A., Hong, Y. et al. (2025). Iterative sublattice amorphization facilitates exceptionalprocessability in inorganic semiconductors.Nat. Mater. DOI:https://doi.org/10.1038/s41563-024-02112-7.www.cell.com/the-innovationhttps://doi.org/10.1038/s41565-023-01464-6https://doi.org/10.1038/s41563-018-0047-zhttps://doi.org/10.1038/s41565-023-01457-5https://doi.org/10.1038/s41565-023-01457-5https://doi.org/10.1038/s41586-024-07621-8https://doi.org/10.1038/s41563-024-02112-7https://doi.org/10.1038/s41563-024-02112-7http://www.thennovation.orghttp://www.thennovation.org Sub-lattice amorphization as a new driver of room temperature plasticity in inorganic semiconductors Background Prospects and challenges Funding and acknowledgments Declaration of interests References