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[[Vol. 65]New Laser-Assisted Non-Volatile Memory Based on 2D van-der-Waals Heterostructures_ WPI-MANA.pdf](https://mdr.nims.go.jp/filesets/5a832b22-9416-4a40-8c0f-4161818cf95c/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.65] New Laser-Assisted Non-Volatile Memory Based on 2D van-der-Waals Heterostructures](https://mdr.nims.go.jp/datasets/b3bdf2cb-41d4-4955-a3b1-53875e95e2a5)

## Fulltext

2022/03/31 16:19 New Laser-Assisted Non-Volatile Memory Based on 2D van-der-Waals Heterostructures| MANAhttps://www.nims.go.jp/mana/research/highlights/vol65.html 1/3Previous  Index  NextResearch Highlights[Vol. 65]New Laser-Assisted Non-Volatile Memory Based on 2D van-der-WaalsHeterostructures17 Mar, 2021A research team at MANA has demonstrated a laser-assisted non-volatile memorydevice based on two-dimensional van-der-Waals heterostructures.The researchers designed and investigated a few-layer rhenium disulfide (ReS2) field-effecttransistor with a local floating gate (FG) of monolayer graphene separated by a thin hexagonalboron nitride (h-BN) tunnel layer and applied it to non-volatile memory (NVM) devices.FG-NVM devices based on 2D van-der-Waals heterostructures (atomically thin layers that areattached to each other via very weak van-der-Waals interactions) have been the focus ofconsiderable attention recently, as their tuneable and multibit operation under laser light couldmake them important components in future digital electronics and multifunctional memoryapplications.The team demonstrated multi-level memory operation via 532nm laser pulse and electrostatic gatepulse coupling. The robustness and stability of the laser-assisted tuneable ReS2/h-BN/FG-graphenedevice show the potential for multibit information storage.Laser-assisted memory operation provides a new degree of freedom for multifunctionalhttps://www.nims.go.jp/mana/research/highlights/vol64.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol66.html2022/03/31 16:19 New Laser-Assisted Non-Volatile Memory Based on 2D van-der-Waals Heterostructures| MANAhttps://www.nims.go.jp/mana/research/highlights/vol65.html 2/3optoelectronic devices with the extra functionality of optically communicated multilevel access.Since laser light can travel through free space without losing power, it allows operation ofoptoelectronic devices from a distance at low power and with little need for maintenance.The MANA researchers used direct bandgap multilayer ReS2 because the material satisfies variousrequirements as a channel material for electronic devices, as well as being a strong light-absorbinglayer, which makes it useful in light-assisted optoelectronic applications.The device exhibits the functionality of a conventional electronic memory and can store laser-pulseexcited signal information for future all-optical logic and quantum information processing.It also addresses a need for a low power and optical control of multi-level operation of NVMdevices, as well as for an NVM optoelectronic device that can distinguish light wavelengths for colorsensing in digital imaging.This research was carried out by Yutaka Wakayama (Group Leader, Quantum Device EngineeringGroup) and his collaborators.Reference“Laser-Assisted Multilevel Non-Volatile Memory Device Based on 2D van-der-Waals Few-Layer-ReS2/h-BN/Graphene Heterostructures”Author: Bablu Mukherjee, Amir Zulkefli, Kenji Watanabe, Takashi Taniguchi, YutakaWakayama and Shu NakaharaiJournal: Advanced Functional Material 30 [42] 2001688 [25 August 2020]DOI: 10.1002/adfm.202001688(Press release on this research)"Development of a Multivalued Optical Memory Composed of Two-Dimensional Materials” (25August 2020)https://www.nims.go.jp/eng/news/press/2020/08/202008250.html（MANA E-BULLETIN）https://www.nims.go.jp/mana/ebulletin/AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)https://samurai.nims.go.jp/profiles/mukherjee_babluhttps://samurai.nims.go.jp/profiles/taniguchi_takashihttps://samurai.nims.go.jp/profiles/wakayama_yutakahttps://samurai.nims.go.jp/profiles/nakaharai_shuhttps://doi.org/10.1002/adfm.202001688https://www.nims.go.jp/eng/news/press/2020/08/202008250.htmlhttps://www.nims.go.jp/mana/ebulletin/2022/03/31 16:19 New Laser-Assisted Non-Volatile Memory Based on 2D van-der-Waals Heterostructures| MANAhttps://www.nims.go.jp/mana/research/highlights/vol65.html 3/3National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jp