# Fileset

[advs7476-sup-0001-suppmat.pdf](https://mdr.nims.go.jp/filesets/59680135-c22c-4f1d-875b-00962aa8bd52/download)

## Creator

[Weinan Zhou](https://orcid.org/0000-0003-2946-9913), [Taisuke Sasaki](https://orcid.org/0000-0002-5952-7638), [Ken‐ichi Uchida](https://orcid.org/0000-0001-7680-3051), [Yuya Sakuraba](https://orcid.org/0000-0003-4618-9550)

## Rights

[Creative Commons BY Attribution 4.0 International](https://creativecommons.org/licenses/by/4.0/)

## Other metadata

[Direct‐Contact Seebeck‐Driven Transverse Magneto‐Thermoelectric Generation in Magnetic/Thermoelectric Bilayers](https://mdr.nims.go.jp/datasets/00acb3b8-fe74-471a-bb26-fff052dfd7f0)

## Fulltext

Supporting Informationfor Adv. Sci., DOI 10.1002/advs.202308543Direct-Contact Seebeck-Driven Transverse Magneto-Thermoelectric Generation inMagnetic/Thermoelectric BilayersWeinan Zhou*, Taisuke Sasaki, Ken-ichi Uchida and Yuya Sakuraba1 Supporting Information   Direct-Contact Seebeck-Driven Transverse Magneto-Thermoelectric Generation in Magnetic/Thermoelectric Bilayers  Weinan Zhou*, Taisuke Sasaki, Ken-ichi Uchida, and Yuya Sakuraba     Figure S1. a) H dependence of ρyx of the sample with tM = 10 nm, b) tM = 40 nm, c) tM = 100 nm, d) tM = 150 nm, e) tM = 350 nm, and f) tM = 500 nm. The dashed black line in a) indicates the linear fitting at high H to evaluate ρAHE,eff at zero H.    2  Figure S2. a) H dependence of Ey divided by ∇𝑇 of the sample with tM = 10 nm, b) tM = 40 nm, c) tM = 100 nm, d) tM = 150 nm, e) tM = 350 nm, and f) tM = 500 nm. The dashed black line in a) indicates the linear fitting at high H to evaluate 𝑆tot𝑦 at zero H.    3  Figure S3. a) tanθAHE,eff as a function of F, which is the ratio of tTE to ttot, in the range between 0.96 and 1. The black line is calculated using Equation (7) with the experimentally measured transport properties of Fe-Ga and n-type Si, while the black data points are obtained from the measured ρAHE,eff and ρxx,eff of samples with various tM. The inset shows the calculated line in the full range of F between 0 and 1. b) The effective longitudinal electrical conductivity (σxx,eff) as a function of F. The green line is the calculated using the relationship 𝜎𝑥𝑥,eff =1𝜌𝑥𝑥,eff= (1 − 𝐹)𝜎M + 𝐹𝜎TE (𝜎M =1𝜌M and 𝜎TE =1𝜌TE), while the green data points are obtained from the measured results (Figure 4a). The inset shows the calculated line in the full range of F between 0 and 1.    4  Figure S4. a) HAADF-STEM image of the sample with tM = 20 nm, together with the EDS elemental maps of Si, Fe, Ga, Au, and Pt, and b) the corresponding line composition profile along the direction as indicated by the white dashed arrow in a). Pt was deposited during the making of the STEM specimen. c) SAED pattern of the Fe-Ga layer in a). d) HAADF-STEM image of the same sample focusing on the Fe-Ga/Si interface, together with the EDS elemental maps of Si, Fe, and Ga, and e) the corresponding line composition profile along the direction as indicated by the white dashed arrow in d).   5  Figure S5. H dependence of Ey of the sample with tM = 70 nm measured when a) I = 1.0, b) −1.0, c) 0.8, d) −0.8, e) 0.6, f) −0.6 A was applied to the Peltier module. The results labelled 1st are used in the paper, while the remeasured results are labelled 2nd to demonstrate the reproducibility of the measurement. The dashed black lines in a) indicate the linear fitting at high H to evaluate the anomalous component of Ey at zero H. g) The anomalous component of Ey at zero H as a function of the corresponding ∇𝑇 for 1st and h) 2nd. The colored dashed lines in g) and h) represent the linear fittings with the error bars taken into consideration, which give 𝑆tot𝑦 = 15.2±0.4 μV K−1 for 1st and 𝑆tot𝑦 = 15.5±0.5 μV K−1 for 2nd. 6  Figure S6. Saturation magnetic field (Hs) of Fe-Ga as a function of tM. The values are extracted from H dependence of Ey divided by ∇𝑇. The black dashed line indicates the value obtained from the Fe-Ga reference sample.