# Fileset

[Figures.pdf](https://mdr.nims.go.jp/filesets/59261643-e02b-4667-a2c8-1d6e684a65e0/download)

## Creator

[Yuichi Oshima](https://orcid.org/0000-0001-8293-4891), Shingo Yagyu, Takashi Shinohe

## Rights

© 2021. This manuscript version is made available under the CC-BY-NC-ND 4.0 license https://creativecommons.org/licenses/by-nc-nd/4.0/.[Creative Commons BY-NC-ND Attribution-NonCommercial-NoDerivs 4.0 International](https://creativecommons.org/licenses/by-nc-nd/4.0/)

## Other metadata

[Visualization of threading dislocations in an α-Ga2O3 epilayer by HCl gas etching](https://mdr.nims.go.jp/datasets/db6eadfe-d9ad-4772-88c1-9245cb7b1e09)

## Fulltext

平成19年度採択産業技術研究助成事業　中間評価ヒアリング資料Fig. 1(a) (b) (c) [1ത100]5 m 5 m 5 m(11ത20)Polycrystalline -Ga2O3Fig. 2MN1441 (1.5hr)MN1441 (1.5hr)(a) (b) (c)1 mSeed layerMask Window[11ത20][0001]Fig. 3(a) (b)(c) (d)[1ത100]3 mMaskWindowMask3 m3 m3 mWindowCoalesced boundaryLine of etch pitsFig. 4Type IIType IType III0.5 m[1ത100]Fig. 5(a) (b) (c)Type IType IType I[11ത20][0001]0.5 mFig. 6(a) (b) (c)Type IIType I[11ത20][0001]0.5 mFig. 7(a) (b) (c)Type III[11ത20][0001]0.5 m