# Fileset

[講演予稿集 16p-A408-1.pdf](https://mdr.nims.go.jp/filesets/4ada86e6-bf73-48c4-b0ab-8c7025745e8e/download)

## Creator

[Guo Chen](https://orcid.org/0009-0004-9263-5616), [Zilong Zhang](https://orcid.org/0000-0002-9759-9253), [Liwen Sang](https://orcid.org/0000-0003-0946-1025), [Yasuo Koide](https://orcid.org/0000-0001-8321-9822), [Satoshi Koizumi](https://orcid.org/0000-0003-4961-5658), [Meiyong Liao](https://orcid.org/0000-0003-1361-4266)

## Rights

[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Effect of Ultra-High Vacuum Annealing and Hydrogen Plasma Treatment on the Resonance Properties of Single-Crystal Diamond MEMS Cantilevers](https://mdr.nims.go.jp/datasets/9b1e1903-b6a1-4700-ae6c-a9711e7923fe)

## Fulltext

Effect of Ultra-High VacuumAnnealing and Hydrogen Plasma Treatment on theResonance Properties of Single-Crystal Diamond MEMS CantileversNational Institute for Materials Science, Guo Chen, Zilong Zhang, Liwen Sang, Yasuo Koide,Satoshi Koizumi, Meiyong LiaoE-mail: meiyong.liao@nims.go.jpSingle-crystal diamond (SCD) presents as an ideal semiconductor material for high-performanceand high-reliability nano- or microelectromechanical system (N/MEMS) devices, on account of itsoutstanding mechanical, physical, chemical and electronic properties.1,2 To be specific, compared tothe other traditional materials, such as Si, SiC, III-nitride and so on, SCD has superior mechanicalstrength, ultra-wide bandgap, the highest Young’s modulus and thermal conductivity, and lowcoefficient of thermal expansion with excellent chemical inertness.3 Therefore, the quality (Q) factorand reliability of SCD MEMS could be improved greatly, compared with the state-of-the-artresonators prepared by the other materials.4A smart-cut technology based on the ion-implantation assisted lift-off (IAL) technique method wasproposed and demonstrated to fabricate the SCD-on-SCD N/MEMS resonators with ultrahigh Qfactors over one million in our previous work.5 It was shown that the ion-implantation damage induceddefects degraded the Q factor of the diamond MEMS resonators.6 Reducing the defects in theresonators by annealing the as-fabricated SCD MEMS cantilevers in an ultra-high vacuum ambient isone of the strategy to improve the Q factors.7 Nevertheless, the annealing effect on the SCD MEMScantilevers is not well understood and has not been systematically investigated yet.In this work, we investigated the effect of ultra-high vacuum annealing and hydrogen (H2) plasmatreatment on the resonance properties of SCD MEMS cantilevers. The resonance frequency and Qfactors were measuredand analyzed afterannealing from 900 to1100℃ followed by H2plasma treatment.Despite the annealing andplasma treatment, theresonance frequency ofthe SCD cantilevers wellfollows the inverse powerlaw relationship with thelength of different SCDMEMS cantilevers,revealing the excellentreliability of SCD MEMS,as shown in Fig.1 (a). Itwas found that the Qfactors were markedlyimproved from the typical value around 8,000 to over 15,000 after the annealing treatment at 1100℃for 7 hours (Fig.1(b)). And the Q factors also increased after further cleaning by H2 plasma. Theimprovement of the Q factors is due to the annihilation of the defects within the SCD cantilevers.References1. Z. Zhang, L. Sang, M. Liao, Carbon. 200, 401-409 (2022).2. X. Shen, L. Sang, M. Liao, Ultramicroscopy., 234, 113464 (2022).3. Z. Zhang, L. Sang, M. Liao, Mater. Res. Lett. 8 (5), 180-186 (2020).4. H.Sun, L. Sang, H. Wu, Z. Zhang, M. Liao, Phys. Rev. Lett. 125(20), 206802 (2020).5. M. Liao, S. Hishita, E. Watanabe, S. Koizumi, Y. Koide, Adv. Mat. 22, 5393 (2010).6. H. Wu, L. Sang, M. Liao, Phys. Rev. Mater., 2(9) 090601 (2018).7. M. Liao, Functional Diamond. 1(1), 29-46 (2021).Fig. 1 The resonance frequency (a) and Q factors (b) change with the H2plasma treatment and different annealing temperature for the SCDMEMS cantilevers with different length.2023年第70回応用物理学会春季学術講演会 講演予稿集 (2023 上智大学　四谷キャンパス+オンライン)16p-A408-1 © 2023年 応用物理学会 05-083 6.2