# Fileset

[Fig. S1.docx](https://mdr.nims.go.jp/filesets/3cdfcb30-4ad1-4c7a-9286-2152a928f13b/download)

## Creator

[Masataka Imura](https://orcid.org/0000-0002-4236-9549), [Takanobu Hiroto](https://orcid.org/0000-0002-6176-5782), [Takaaki Mano](https://orcid.org/0000-0002-6955-260X), Yuri Itokazu, Masafumi Jo

## Rights

[Creative Commons BY Attribution 4.0 International](https://creativecommons.org/licenses/by/4.0/)

## Other metadata

[Analysis of In                    <i>x</i>                    Ga1−                    <i>x</i>                    N growth rate in atmospheric-pressure metal-organic vapor phase epitaxy: Insights into incorporation and desorption processes of GaN and InN for precise growth control](https://mdr.nims.go.jp/datasets/76421c2e-b00a-4357-8237-d5f2bac57618)

## Fulltext

Title of Paper Goes Here:  for JAPSupplementary Fig. S1 M. Imura et. alOptical properties of MQW structures designed for 520 nm emission: (a, b) photographs of samples grown at V/III ≈ 1000 and ≈ 8000, respectively; (c) UV-excited luminescence images; and (d) He–Cd laser-excited photoluminescence spectra mapping. The low-V/III sample exhibits severe brown discoloration and weak emission, whereas the high-V/III sample emits green.1image1.png