# Fileset

[Supporting Information.pdf](https://mdr.nims.go.jp/filesets/309a2167-7691-4d73-a44b-2ff2866b535e/download)

## Creator

[Takeshi YASUDA](https://orcid.org/0000-0003-4652-9105), [Kenji SAKAMOTO](https://orcid.org/0000-0002-1379-874X)

## Rights

This is the Accepted Manuscript version of an article accepted for publication in Japanese Journal of Applied Physics.  IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it.  The Version of Record is available online at https://dx.doi.org/10.35848/1347-4065/ad8240

## Other metadata

[Current density-voltage characteristics of exciplex-type organic light-emitting diodes expressed by a simple analytic equation](https://mdr.nims.go.jp/datasets/e0b707ed-5ef8-461b-be30-a791005a320f)

## Fulltext

Microsoft Word - 2024-8-21 Supporting Information1  Supporting Information  Current density-voltage characteristics of exciplex-type organic light-emitting diodes expressed by a simple analytic equation  Takeshi Yasuda* and Kenji Sakamoto  Research Center for Macromolecules and Biomaterials, National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan  *E-mail: YASUDA.Takeshi@nims.go.jp                         Figure S1. Characteristics of (a) luminance-voltage and (b) external quantum efficiency (EQE)-current density of the OLEDs fabricated in this study.    (a) (b) 2                Figure S2. Modified J-V characteristics using the data from Fig. 3, demonstrating that J is proportional to the square of (V-Vbi): log J ~ 2log(V-Vbi). The solid line represents a slope of 2 on the log-log plot.                     Figure S3.  Hole mobilities (μh) for m-MTDATA thin films in this study and reported by other research groups. The measurement methods (TOF: time-of-flight) and the thickness of the thin films are also provided. The electric-field-dependent μh determined from SCLC are plotted in the electric field E1/2 from 230 to 660 (V1/2cm-1/2) according to the following equation: μh = μ0exp(βE1/2).   3                   Figure S4. Electron mobilities (μe) for BPhen thin films in this study and reported by other research groups. The measurement methods and the thickness of the thin films are also provided. The solid line represents the electric-field-dependent μe for film thicknesses of 100 nm or less measured by Xu et al., extended to low electric fields according to the following equation: μe = μ0exp(βE1/2). In contrast, the dotted line depicts electric-field-independent μe estimated in this study.                  Figure S5. J-V characteristics for the electron-only device (ITO/BPhen (40 nm)/ LiF (1 nm)/Al). Electrons were injected from the LiF/Al side. The inset shows log-log plots of J-V characteristics. The solid curves are the best fit results using Equation (3).  4  References S1) S. W. Tsang, S. K. So, and J. B. Xu, J. Appl. Phys. 99, 013706 (2006). S2) C. Giebeler, H. Antoniadis, D. D. C. Bradley, and Y. Shirota, Appl. Phys. Lett. 72, 2448 (1998). S3) G. Chauhan, R. Srivastava, A. Kumar, O. Rana, P .C. Srivastava, and M. N. Kamalasanan, Org. Electron. 13, 394 (2012).