# Fileset

[PhysRevApplied.18.014018.pdf](https://mdr.nims.go.jp/filesets/1c86b6ff-941e-486a-ba2e-80fa3ece6dc1/download)

## Creator

Sotirios Papadopoulos, Tarun Agarwal, Achint Jain, [Takashi Taniguchi](https://orcid.org/0000-0002-1467-3105), [Kenji Watanabe](https://orcid.org/0000-0003-3701-8119), Mathieu Luisier, Alexandros Emboras, Lukas Novotny

## Rights

[Creative Commons BY Attribution 4.0 International](https://creativecommons.org/licenses/by/4.0/)

## Other metadata

[Ion Migration in Monolayer <math display="inline">  <msub>    <mrow>      <mi>Mo</mi>      <mi>S</mi>    </mrow>    <mn>2</mn>  </msub></math> Memristors](https://mdr.nims.go.jp/datasets/2ad1d60f-e8d4-4519-8f0a-05d99b11bade)

## Fulltext

Ion Migration in Monolayer MoS2 MemristorsPHYSICAL REVIEW APPLIED 18, 014018 (2022)Ion Migration in Monolayer MoS2 MemristorsSotirios Papadopoulos ,1 Tarun Agarwal,2 Achint Jain ,1,† Takashi Taniguchi,3 Kenji Watanabe ,3Mathieu Luisier,4 Alexandros Emboras,4 and Lukas Novotny1,*1Photonics Laboratory, ETH Zurich, 8093 Zurich, Switzerland2Dept. of Electrical Engineering, IIT Gandhinagar, Palaj, Gujarat 382355, India3National Institute for Material Science, 1-1 Namiki, Tsukuba 305-0044, Japan4Integrated Systems Laboratory, ETH Zurich, 8092 Zurich, Switzerland (Received 20 April 2022; accepted 10 June 2022; published 8 July 2022)Memristors hold great promise as building blocks for future computing architectures where memory andlogic are combined at the hardware level. However, scaling down the dimensions of memristive deviceshas been limited by high leakage currents, thus inhibiting further progress. Recent studies have demon-strated memristors with monolayers of MoS2 and large high-to-low resistance ratios. Defects combinedwith metallic ion migrations are often seen as a possible explanation for this behavior. A detailed under-standing of the switching mechanisms, in particular the role of metal ion diffusion into vacancy sites andcrystal defects, remains elusive. Here we investigate how defect densities affect the performance of mono-layer MoS2 memristors. We experimentally demonstrate that the resistive switching ratio becomes largerif the defect density in MoS2 is increased. Furthermore, by means of ab initio quantum transport simula-tions, we reveal the existence of an optimum range of defect densities and explore the theoretical limitsof monolayer MoS2 memristors. Our results highlight the importance of defect engineering and control intransition metal dichalcogenides memristors.DOI: 10.1103/PhysRevApplied.18.014018I. INTRODUCTIONIn a period where Moore’s scaling law is under siege [1]and the demand for high-density memories is constantlyincreasing [2], fundamentally new electrically switchablestructures are needed to further push technological lim-its. Memristive devices (or memristors) have shown greatpotential as alternative building blocks for nonvolatilememories and computing applications beyond the vonNeumann architecture [3]. Moreover, memristors withmultiple resistive switching states enable the realizationof neuromorphic computing at a hardware level, makingit important to investigate such structures in depth [4]. Theinitial conception of a memristor by Chua in 1971 [5] andits experimental demonstration in 2008 [6] were followed*lnovotny@ethz.ch†Present address: Centre for Quantum Computation and Com-munication Technology, School of Physics, University of NewSouth Wales, Sydney, NSW 2052, AustraliaPublished by the American Physical Society under the terms ofthe Creative Commons Attribution 4.0 International license. Fur-ther distribution of this work must maintain attribution to theauthor(s) and the published article’s title, journal citation, andDOI.by substantial research efforts to determine the physi-cal mechanisms involved in memristive switching andoptimize their characteristics. Since then, several mem-ristive mechanisms have been observed, such as electro-chemical metallization [7], valence-change, [8] and phase-change effects [9]. Current state-of-the-art memristorcross-bar arrays feature approximately 10 nm-sized activeregions, at par with today’s silicon complementary metaloxide semiconductor integrated circuitry [10]. A furtherdownscaling of memristors brings more challenges thanbenefits, especially in terms of stability, reproducibility,and robustness.The rise of various two-dimensional (2D) materials suchas graphene and transition metal dichalcogenides (TMDs)inspired alternative platforms for memristive devices[11–18]. Recent reports have shown very low leakagecurrents in monolayer (1L) MoS2-based memristors com-pared to traditionally used oxides, allowing for thicknessscaling down to less than 1 nm [17,19,20]. However, themechanisms behind the memristive effects observed in 2Dmaterials are not yet understood, especially in devicesemploying monolayers, for which reports present highlycontradictory results [17,21]. Moreover, a recent scanningtunneling microscopy study has shown that point defectssuch as sulfur vacancies can give rise to memristive behav-ior through Au ion diffusion in monolayer TMDs [22].2331-7019/22/18(1)/014018(8) 014018-1 Published by the American Physical Societyhttps://orcid.org/0000-0002-3225-8239https://orcid.org/0000-0002-3495-5935https://orcid.org/0000-0003-3701-8119https://crossmark.crossref.org/dialog/?doi=10.1103/PhysRevApplied.18.014018&domain=pdf&date_stamp=2022-07-08http://dx.doi.org/10.1103/PhysRevApplied.18.014018https://creativecommons.org/licenses/by/4.0/SOTIRIOS PAPADOPOULOS et al. PHYS. REV. APPLIED 18, 014018 (2022)In multilayer structures independent studies have revealedcontrasting findings, attributing the switching mechanismto either phase-transition or defect-mediated atomic migra-tion [12,23]. A detailed investigation of the influence ofvarying defect densities and fabrication process parame-ters on the memristive characteristics in 2D TMDs is stilllacking.Here we investigate the influence of defect densitiesin monolayer MoS2 on the resistive switching ratio. Ourexperimental findings reveal that memristors comprisedof defective MoS2 switch at lower voltages and exhibita stronger change in resistance than memristors madeof pristine MoS2. We support our observations with abinitio quantum transport simulations and develop a modelthat suggests the existence of an optimum range of defectdensities at which the resistive switching difference ismaximum. This work highlights the importance of defectengineering in memristors built from 2D materials andprovides guidelines for enhancing performance.II. DEVICE PREPARATIONOur memristors were built by sandwiching 1L-MoS2between a 1L-graphene top electrode and a 50 nm gold(Au) bottom electrode, in a vertical charge transport con-figuration [cf. Fig. 1(d)]. For protection, we cover the topgraphene electrode by a thin layer of hexagonal boronnitride (h-BN). MoS2 crystals synthesized by chemicalvapor transport with 99.9999% purity were purchasedfrom 2D Semiconductors�. MoS2, graphene, and h-BNflakes were mechanically exfoliated from bulk crystalson Si/SiO2 substrates. A poly-dimethylsiloxane (PDMS)stamp covered by a thin polycarbonate film [24] was usedto sequentially pick up top h-BN, graphene, and MoS2flakes in air. The resulting stack was then transferred ontop of Au electrodes prepatterned by photolithography ona glass substrate (see Sec. S1 in the Supplemental Mate-rial for more details [25]). It is known that evaporation ofcontact metals, including Au, can introduce a significantamount of defects in MoS2 and lead to metal-MoS2 chemi-cal bonding [26]. The use of graphene as a top electrodein our devices allows for evaporation-free fabrication,thereby preventing any inadvertent defect generation inMoS2 due to metal evaporation and decoupling the influ-ence of contact metallization on the memristive behavior,something that has been largely overlooked so far. Thedry pickup and assembly avoids polymer and solvent con-tamination at any stage, resulting in pristine interfaces.(a))Pristine MoS2high-temperaturevacuum annealingpristine MoS2defectiveMoS2Glass AuelectrodeGrapheneMoS2VpeakVreadAv(c)(b)(d) (e) (f)Defective MoS2pristine MoS2 defective MoS2PL intensity (arb. units)PL intensity (arb. units)FIG. 1. (a) Illustration of the MoS2 treatment process. MoS2 exfoliated on a Si/SiO2 substrate is annealed in high vacuum (HV) at400◦C for 1 h during which some sulfur atoms escape the MoS2 crystal lattice due to the high temperature, resulting in a defectiveMoS2 flake. (b),(c) Photoluminescence spectra of (b) an as-exfoliated (pristine) MoS2 flake on Si/SiO2 substrate and (c) after HVannealing at 400◦C (defective). XA, XB and X − refer to the A-exciton, B-exciton and trion spectral contributions respectively, fittedwith Voigt distribution functions. Both spectra were measured from the same MoS2 region with 532 nm laser excitation at 24 μWpower under ambient conditions and were normalized to the peak intensity of the spectrum in (b) for ease of comparison. The inset in(b) shows an optical microscope image of the MoS2 flake before annealing (monolayer outlined by black dashed line). The scale baris 12.5 μm. (d) Schematic illustration of a memristor built by sandwiching 1L-MoS2 between graphene and Au electrodes. The toph-BN flake used for encapsulation has been omitted from the illustration for clarity. Electrical measurements were performed usingpulsed voltage sweeps to eliminate hysteresis. After each write pulse, the device resistance was probed with a much lower read voltage(Vread = 100 mV). Pulse duration and period are 10 ms and 30 ms, respectively. (e),(f) Pulsed I -V measurements of memristors withpristine and defective 1L-MoS2 flakes showing an enhanced switching behavior after high-temperature annealing. The black arrowsindicate the voltage sweep directions in both plots. All measurements were carried out in air at room temperature.014018-2ION MIGRATION IN MONOLAYER MoS2 MEMRISTORS PHYS. REV. APPLIED 18, 014018 (2022)Moreover, the asymmetric electrode configuration allowsfor material-oriented analysis of the results connecting thememristive effect to Au ion diffusion, as discussed laterin this paper. Furthermore, the top h-BN encapsulationavoids material degradation during measurements underambient conditions. Thus, the above fabrication method-ology preserves the purity and high crystal quality of ourMoS2 flakes at every step, allowing us to study MoS2 in itspristine state, in contrast to previous studies [17]. In orderto compare the memristive performance between pristineMoS2 and those with increased defect densities, we alsobuilt devices by intentionally introducing defects in MoS2flakes after exfoliation.Two different treatments were used to generate defectsin our devices: high-temperature annealing in high vac-uum at 400◦C; and argon (Ar) sputtering in a plasmachamber at room temperature. Both of these methods havepreviously been shown to introduce defect sites in theMoS2 crystal lattice [22,27,28]. The annealing processis illustrated in Fig. 1(a). We confirmed the generationof defects through photoluminescence (PL) spectroscopy.Figures 1(b) and 1(c) show the PL spectra of a monolayerMoS2 flake before (pristine) and after high vacuum (HV)annealing (defective) treatment. A strong enhancementof the A-exciton (XA) PL contribution is observed afterannealing. This enhancement originates from the intro-duction of sulfur vacancies (Vs) in MoS2 upon annealingthat act as sites for physisorption of N2 and O2 moleculespresent in air [29]. These molecules lead to an effectivep-doping of MoS2, thereby decreasing the free-electrondensity, and resulting in a stronger XA PL emission [30].It must be noted that this strong PL enhancement cannotbe explained by the release of built-in strain and elimina-tion of polymer residues (if any) upon annealing, as theseeffects were previously shown by us to not result in anyappreciable PL increase in MoS2 [31]. However, in orderto further test the creation of defects during HV annealing,we performed studies on the localized increase of PL effi-ciency as a function of illumination time, an effect that hasbeen attributed to sulfur vacancies in ambient conditions[32]. Measurement results and discussion on that mattercan be found in Sec. S2 of the Supplemental Material [25].In case of Ar-sputtered MoS2 flakes, a reduction in thePL emission was observed, in strong contrast to annealedflakes, which can be attributed to the formation of moreextended defects including MoS6, Mo, and S vacancies[33], resulting in a decrease of the PL quantum yield (seeSec. S2 of the Supplemental Material [25]). Lastly, in orderto study the impact of defects introduced during evapo-ration of metal electrodes on the memristive behavior ofMoS2 devices, we also fabricated devices with grapheneas the bottom electrode and evaporated Au as the topelectrode, following an inverse stacking sequence. It hasbeen shown that during Au evaporation, Mo and S atomscan be substituted by Au atoms, leading to defects in theMoS2 layer [26] that can favor the formation of conductivechannels and thereby enhance the memristive effect.III. ELECTRICAL CHARACTERIZATIONThe memristive performance of the devices preparedwith different defect densities and fabrication procedureswas electrically characterized by applying a voltage pulsesequence and measuring the current with a low-noisesource meter. A periodic triangular bipolar pulsed sweepwas performed with an offset voltage Vread to allow forlow-voltage estimation of the resistance after every appliedpulse [see Fig. 1(d)]. Pulsed electrical measurements havea dual benefit. Firstly, continuous electrostatic stress forlong periods of time is avoided, which was found toincrease the lifetime of our devices and allowed us tostudy their behavior at voltages as high as 7.5 V withoutany apparent degradation. Secondly, this procedure pre-vents any inadvertent parasitic hysteresis due to chargeaccumulation from influencing our measurements [34].This ensures that the hysteresis we observe arises solelyfrom a nonvolatile resistance change, indicative of mem-ristive behavior. Pulsed I -V measurements of devices withpristine and vacuum annealed MoS2 are plotted for com-parison in Figs. 1(e) and 1(f), respectively. Every point inthe plot corresponds to the average value of the currentflow during an applied voltage pulse versus the magni-tude of that pulse. In the pristine device, we only observea weak hysteresis even after applying significantly highvoltages (Vpeak = ±7 V). In the case of vacuum annealedMoS2, the hysteresis gets enhanced and appears at lowerapplied voltages compared to the pristine MoS2 device.We attribute this effect to the increased defect densityof the MoS2 flake caused by high-temperature annealing.This is an indication that an increase in defect densitycan provide the means for a stronger memristive perfor-mance.We also find that the devices switch from a high-resistance state to a low-resistance state only with apositive voltage applied at the Au electrode and withthe graphene electrode grounded. This polarity-dependentswitching behavior is an indicator of material-specificproperties. More specifically, we attribute this observationto the migration of Au ions from the Au electrode to defectsites in the MoS2 flake. It is well known that Au atoms canionize and migrate under the influence of an applied elec-tric field. Defect sites offer an energetically favorable statefor Au ions to bond with the MoS2 crystal. This process canbe reversed by flipping the direction of the applied electricfield. Since bound Au atoms at the MoS2 flake lower theresistance of the Au-MoS2 interface, this can lead to resis-tive switching effects when excited with a bipolar voltagesweep [22]. We also observed an increased hysteresis indevices with Ar-sputtered MoS2 as well as in those with014018-3SOTIRIOS PAPADOPOULOS et al. PHYS. REV. APPLIED 18, 014018 (2022)evaporated Au as a top electrode, which further corrobo-rates our hypothesis. A comparison of I -V measurementsfrom differently treated devices can be found in Sec. S3 ofthe Supplemental Material [25].The observation of hysteresis in the I -V characteristicsof our devices is a strong indicator of the occurrence ofresistive switching. To gain further insight we also char-acterized the resistance at low voltages during the pulsedsweep. After every applied pulse, the device resistance ismeasured at Vread = 100 mV, as indicated in Fig. 2(a),which shows a time-trace of the applied sweep. Figure 2(b)presents the change in resistance �R = R0 − Rread duringthe pulsed voltage sweep, where R0 is the resistance mea-sured before starting the sweep and Rread is the resistancemeasured after each pulse. Results from different devicesare shown for comparison. “Pristine MoS2” no. 1 and no.2 refer to two devices fabricated without any treatment ofthe MoS2 flake. “Au evaporated” no. 1 and no. 2 refer totwo devices featuring an evaporated Au top electrode anda graphene bottom electrode and using otherwise untreatedMoS2. “Ar sputtered” and “vacuum annealed” refer todevices with MoS2 flakes treated with the correspondingmethods. In all devices the same voltage sweep range wasused with Vpeak = ±4 V. We define the on region as theregion after the application of the highest voltage pulse andoff region off regionon regionno.no.no.no.TimeRonRoffτp = 10 msT = 30 ms(a)(b)Vread100 mVΔR (Ω)Voltage (V)FIG. 2. (a) Time-trace of the applied voltage sweep. Blacksolid arrows indicate the low-voltage regions where the resis-tance is measured. Black dashed arrows indicate the voltage levelpositions for 0, 4, and −4 V. Pulse duration τp = 10 ms andpulse period T = 30 ms. Red and blue arrows indicate the timeinstances where the Ron and Roff values are measured, respec-tively. (b) Time-trace of the low-voltage resistance difference �Rfor different devices measured during the pulsed voltage sweeppresented in (a). The resistance is measured with Vread = 100 mVafter every applied pulse. An increase in �R in the on regioncan be observed for all devices. Defective devices show a muchstronger increase in �R compared to pristine ones.before the application of the lowest. The region before andafter the on region is referred to as the off region. A cleardifference in the magnitude of �R between pristine anddefective devices can be seen, with the latter exhibiting astronger change in �R.We use �R to compare different devices since it can-cels out any other series resistances such as contact andgraphene sheet resistance. However, resistance also scaleswith the vertical junction area in every device, which isdifficult to estimate accurately from optical microscopeimages due to edge effects at the graphene/MoS2/Au junc-tion interface. Therefore, the switching ratio, which is anexperimental quantity that is immune to the variations injunction areas among different devices, was also investi-gated. The switching ratio is given by Roff/Ron , where Roffand Ron are the resistances of the device after the appli-cation of the largest and the smallest voltage pulses, asindicated in Fig. 2(a) with blue and red arrows, respec-tively. The total resistance measured also includes theseries graphene sheet resistance which can vary betweendevices. To estimate its contribution to the overall resis-tance and subtract it from Roff and Ron values we estimatedthe graphene sheet resistance per unit length by fabri-cating a multielectrode device where Au electrodes withdifferent spacings were connected by one graphene flakeand performing transmission line measurements. The esti-mated graphene resistance was then subtracted from thetotal device resistance according to the graphene electrodelength used in each device.Taking the aforementioned under consideration, inFig. 3(a) we plot the switching ratios Roff/Ron for sweepsperformed with different Vpeak values for all devices. Herethe values of Vpeak have been adjusted to account for thevoltage drop across the graphene sheet. We observe thatin the case of pristine devices, the ratio reaches a mod-est value of 1.1 only at high Vpeak voltages around 6.5 V.On the other hand, for devices with higher MoS2 defectpristine low defect densityatom bombardedextended defect sitesvacuum annealedmainly S vacancies threshold voltagedecreasing(a) (b)MoS2 treatmentRoff / Ronmax (Roff / Ron )Vpeak on device (V)no.no.no.no.FIG. 3. (a) Switching ratio Roff /Ron as a function of Vpeak for allreported devices. (b) A comparison of the maximum switchingratios achieved for the different MoS2 treatments associated withdifferent defect types and densities. Colors in the plot correspondto the legend shown at the bottom.014018-4ION MIGRATION IN MONOLAYER MoS2 MEMRISTORS PHYS. REV. APPLIED 18, 014018 (2022)density, the ratio reaches values as high as 1.6 at muchlower Vpeak values. This clearly indicates that memristiveswitching depends on the defect density. In Fig. 3(b), weplot the maximum ratio achieved experimentally for thedifferent MoS2 treatment procedures. Interestingly, we findthat vacuum annealing leads to the highest switching ratioat low Vpeak voltages. Our PL measurements reveal thatin this case mainly S vacancies are created in the crys-tal whereas in the cases of Ar sputtering and evaporationof Au as a top electrode, more extended defect sites areexpected to be created. The existence of extended defectsites lowers Roff and hence when Au atoms diffuse into thevacancy sites, a smaller change in Ron is observed leadingto a lower switching ratio.Our measurements indicate that the switching ratio canbe enhanced by increasing the defect density of MoS2.However, we did not observe switching ratios higher than1.7. This observation is in contrast to recent reports ofvertical graphene/MoS2/Au structures where switchingratios up to 104 were observed [17]. One of the proba-ble reasons for this contradiction is the fabrication processreported in [17], which includes invasive steps, such asdirect contact with polymers and solvents such as PDMSand de-ionized water. Direct contact with these materi-als compromises the interface quality and can introducecontaminants and could explain the unusually high Roffobserved for subnanometer tunnel barriers. We note, how-ever, that some studies report tunneling resistances closerto those observed in our study [21]. An increased mem-ristive effect was also reported for transfer-free and litho-free fabrication with evaporated top electrodes [17]. Inan effort to reproduce these results, we fabricated andtested devices with evaporated Au top electrodes withoutany success. The only distinguishable difference betweenour work and [17] is the use of chemical vapor depo-sition (CVD) grown 1L-MoS2 vacuum annealed at 600K, instead of high-quality pristine flakes as in our work.The main differences between CVD-grown and exfoli-ated MoS2 is that the former typically hosts a higherdefect and grain boundary density, lower interface qualityand more process contaminants like oxides and multilayerdomains.IV. QUANTUM TRANSPORT MODELINGIn order to further our understanding of the memristivebehavior of MoS2 we performed ab initio quantum trans-port simulations [35]. Illustrations of the studied configu-rations are presented in Figs. 4(a)–4(c). The three modelsaccount for different MoS2 crystal configurations, namely(a) pristine, (b) including a single sulfur vacancy (Vs), and(c) including a migrated Au atom at the Vs site. We denotethe resistances for the three configurations by Rpr , RVs, andRAu . The resistances are evaluated at 100 mV bias voltageand the cell area of the simulation is A = 2.14 × 3.79 nm2.VsdAuAuGrMoS2Au at Vssite(a)A(c)(b)(d) (e)Resitance (kΩ)Defect density ρd (nm–2)Defect density ρd (nm–2)RVs - RAu (kΩ)RVs / RAuRAuRVsRAu-fitRVs-fitFIG. 4. (a)–(c) Illustration of the atomic models simulatedwith (a) pristine MoS2, (b) one sulfur vacancy Vs and (c) withone Au atom at the Vs site. (d) Simulation results and model fitfor the resistances evaluated in the device models presented in(a)–(c) for different defect densities. RAu is the resistance evalu-ated for the model in (c), RVsis the resistance evaluated for themodel in (b), and the resistance for defect density ρd = 0 (pris-tine) is the resistance for the model in (a). The fit function isgiven by Eq. (1). (e) Calculated values of resistance differenceRVs− RAu and switching ratio RVs/RAu using the fitted valuesin (d).The resistances are calculated for an interlayer distance ofd = 4.7 Å [Fig. 4(c)]. This interlayer distance has beenchosen as the one where RVs− RAu is maximum sincethe resistance difference diminishes at smaller and largerinterlayer distances due to metal- induced gap states, andhigh tunneling resistances, respectively (see Sec. S4 in theSupplemental Material for more details [25]).By increasing the number of defects in the cell area ofthe simulation we can evaluate the resistances as a func-tion of defect density (colored dots in Fig. 4(d)). Due tolimits on the cell area size posed by computation time, theregion of low defect densities cannot be easily explored,thus we employ a classical model to predict the resistanceas a function of defect density ρd. The estimated overallresistance can be written asR (ρd) = Rpr × RdRd + (Rpr − Rd)ρd × A(1)where Rd refers to either RVsor RAu , depending on the con-figuration. Details on the formation of the model can befound in Sec. S5 of the Supplemental Material [25]. Weuse the simulation results to fit the function in Eq. (1).The result is shown in Fig. 4(d). Both RVsand RAu dropwith increasing ρd due to defect states that appear insidethe MoS2 bandgap (see Fig. S6d in the SupplementalMaterial). RAu takes on lower values than RVs, whichhighlights the importance of Au migration in resistiveswitching. The difference in resistance RVs− RAu , as well014018-5SOTIRIOS PAPADOPOULOS et al. PHYS. REV. APPLIED 18, 014018 (2022)as the switching ratio RVs/RAu , are plotted as a functionof ρd in Fig. 4(e). Interestingly RVs− RAu is not mono-tonic but features a maximum in the low ρd region. Onthe other hand, the switching ratio RVs/RAu increases con-stantly with ρd, with a tendency to saturate. Although theratio increases for high ρd, the resistances RVsand RAudrop significantly, making the performance dependent onany other possible series resistances present in the sys-tem. However, in the region where RVs− RAu is maximum,the ratio RVs/RAu is already at half of its maximum value,making this region preferable for memristive operation.These results reveal the need for defect engineering ofsuch memristive devices for optimized performance. Fur-thermore, for ρd → ∞, RVs/RAu = 6.8. Although the caseof infinite ρd seems nonphysical, it can be translated tothe situation of an Au scanning tunneling microscope tipover a Vs site exchanging an Au atom. Recent studieshave experimentally demonstrated this, reporting a verysimilar switching ratio for the same interlayer distancerange [22]. This increases the validity of our simula-tions. Furthermore, our experimental observations confirmthe theoretical prediction that increasing the defect den-sity of the material increases the �R and the Roff/Ronratio.V. DISCUSSIONThe objective of our study is to explore the limita-tions of monolayer 2D memristors from a theoretical andexperimental perspective. Even in the optimal case of thesimulation model the high tunneling current in the off statedue to the presence of defects does not allow switchingratios higher than 7.The simulated and experimentally observed resistanceratios are of the same order of magnitude. The small dis-crepancy observed may be due to limited knowledge of theactual defect densities in the fabricated devices or due tosample imperfections, such as bubbles and/or unaccountedcontact resistances. Additionally, in our simulations weassume that all the Vs are filled immediately and abruptly,whereas in reality the occupation of the Vs by Au ionshappens gradually.Another important result is that RVs(the Roff value) dropssignificantly with increasing ρd due to defect states in thebandgap while the switching ratio saturates at the sametime. We note that some previous studies reported surpris-ingly strong memristive effects [17]. We have not beenable to experimentally reproduce these observations. Ourtheoretical treatment provides further evidence that suchstrong memristive effects in monolayer MoS2 cannot beachieved solely due to defects. Our experimental obser-vations support this claim and emphasize the need forfurther studies to clarify the exact mechanisms respon-sible for the strong memristive effects reported in recentstudies.VI. CONCLUSIONTo conclude, we fabricated different monolayer MoS2memristive devices by employing noninvasive fabricationmethods with pristine, Ar-sputtered and vacuum-annealedMoS2, as well as devices with evaporated Au as a topelectrode. We compared their memristive performance andshowed that with increased defect density, both �R andthe Roff/Ron ratio get enhanced. We attribute this effectto Au ion migration into MoS2 defect sites. Our experi-mental observations are in good agreement with numericaland theoretical models. Moreover, we explored the rela-tion between defect density and memristive performanceand revealed the existence of an optimum range of defectdensities for designing efficient memristors. Additionally,we compared our results with previous studies and con-cluded that Au ion migration cannot be the sole reason forthe reported results in [17]. Still, our analysis establishesa clear understanding of the role of defects in resistiveswitching in MoS2 monolayers and provides guidelinesfor controlling their memristive performance. Finally, ourwork provides theoretical insights into the relation betweendefect density and memristive performance for memristorsbased on ion migration.ACKNOWLEDGMENTSThis study was supported by funding from ETH Zurichunder ETH Grant No. ETH-15 19-1 SYNEMA, the ETHZurich Foundation project number 2013-08 (11) with adonation from the Stavros Niarchos Foundation, and bya grant from the Swiss National Supercomputing Centre(CSCS) under Project s971. Use of the cleanroom facil-ities at the FIRST Center for Micro and Nanoscience,ETH Zurich is gratefully acknowledged. T.T. and K.W.acknowledge support from the Elemental Strategy Initia-tive conducted by the MEXT, Japan and JSPS KAKENHI(Grant No. JP15K21722). The authors thank Ronja Khe-lifa and Anna Kuzmina for fruitful discussions and PaulLehmann for providing experimental support.[1] M. M. Waldrop, The chips are down for Moore’s law,Nature 530, 144 (2016).[2] Editorial, Testing memory downsizing limits, Nature Nan-otechnology 14, 1 (2019).[3] T. Hasegawa, K. Terabe, T. Tsuruoka, and M. Aono,Atomic switch: Atom/ion movement controlled devicesfor beyond von-Neumann computers, Adv. Mater. 24, 252(2012).[4] D. S. Jeong and C. S. Hwang, Nonvolatile memory materi-als for neuromorphic intelligent machines, Adv. Mater. 30,1704729 (2018).[5] L. Chua, Memristor—The missing circuit element, IEEETrans. Circuit Theory 18, 507 (1971).014018-6https://doi.org/10.1038/530144ahttps://doi.org/10.1038/s41565-018-0355-0https://doi.org/10.1002/adma.201102597https://doi.org/10.1002/adma.201704729https://doi.org/10.1109/TCT.1971.1083337ION MIGRATION IN MONOLAYER MoS2 MEMRISTORS PHYS. REV. APPLIED 18, 014018 (2022)[6] D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S.Williams, The missing memristor found, Nature 453, 80(2008).[7] R. Waser, R. Dittmann, C. Staikov, and K. Szot, Redox-based resistive switching memories nanoionic mechanisms,prospects, and challenges, Adv. Mater. 21, 2632 (2009).[8] H. S. Wong, H. Y. Lee, S. Yu, Y. S. Chen, Y. Wu, P. S. Chen,B. Lee, F. T. Chen, and M. J. Tsai, Metal-oxide RRAM,Proc. IEEE 100, 1951 (2012).[9] H.-S. Wong, S. Raoux, S. Kim, J. Liang, J. Reifenberg,B. Rajendran, M. Asheghi, and K. Goodson, Phase changememory, Proc. IEEE 98, 2201 (2010).[10] S. Pi, C. Li, H. Jiang, W. Xia, H. Xin, J. J. Yang, and Q.Xia, Memristor crossbar arrays with 6-nm half-pitch and2-nm critical dimension, Nat. Nanotechnol. 14, 35 (2019).[11] Q. Zhao, Z. Xie, Y. P. Peng, K. Wang, H. Wang, X. Li,H. Wang, J. Chen, H. Zhang, and X. Yan, Current statusand prospects of memristors based on novel 2D materials,Mater. Horiz. 7, 1495 (2020).[12] F. Zhang, H. Zhang, S. Krylyuk, C. A. Milligan, Y. Zhu,D. Y. Zemlyanov, L. A. Bendersky, B. P. Burton, A. V.Davydov, and J. Appenzeller, Electric-field induced struc-tural transition in vertical MoTe2 and Mo1−xWxTe2-basedresistive memories, Nat. Mater. 18, 55 (2019).[13] P. Cheng, K. Sun, and Y. H. Hu, Memristive behavior andideal memristor of 1T phase MoS2 nanosheets, Nano Lett.16, 572 (2016).[14] Y. Wang, J. Xiao, H. Zhu, Y. Li, Y. Alsaid, K. Y. Fong, Y.Zhou, S. Wang, W. Shi, Y. Wang, A. Zettl, E. J. Reed, andX. Zhang, Structural phase transition in monolayer MoTe2driven by electrostatic doping, Nature 550, 487 (2017).[15] X. Wu, R. Ge, P. A. Chen, H. Chou, Z. Zhang, Y. Zhang,S. Banerjee, M. H. Chiang, J. C. Lee, and D. Akinwande,Thinnest nonvolatile memory based on monolayer h-BN,Adv. Mater. 31, 1806790 (2019).[16] H. K. He, R. Yang, W. Zhou, H. M. Huang, J. Xiong, L.Gan, T. Y. Zhai, and X. Guo, Photonic potentiation andelectric habituation in ultrathin memristive synapses basedon monolayer MoS2, Small 14, 1 (2018).[17] R. Ge, X. Wu, M. Kim, J. Shi, S. Sonde, L. Tao, Y.Zhang, J. C. Lee, and D. Akinwande, Atomristor: Non-volatile resistance switching in atomic sheets of transitionmetal dichalcogenides, Nano Lett. 18, 434 (2018).[18] A. Krishnaprasad, N. Choudhary, S. Das, D. Dev, H.Kalita, H.-S. Chung, O. Aina, Y. Jung, and T. Roy,Electronic synapses with near-linear weight update usingMoS2/graphene memristors, Appl. Phys. Lett. 115, 103104(2019).[19] D. Akinwande, Memory, memristors, and atomristors,IEEE Micro 38, 50 (2018).[20] S. Bhattacharjee, E. Caruso, N. McEvoy, C. Ó Coileáin, K.O’Neill, L. Ansari, G. S. Duesberg, R. Nagle, K. Cherkaoui,F. Gity, and P. K. Hurley, Insights into multilevel resistiveswitching in monolayer MoS2, ACS Appl. Mater. Interfaces12, 6022 (2020).[21] R. Xu, H. Jang, M. H. Lee, D. Amanov, Y. Cho, H. Kim, S.Park, H. J. Shin, and D. Ham, Vertical MoS2 double-layermemristor with electrochemical metallization as an atomic-scale synapse with switching thresholds approaching 100mV, Nano Lett. 19, 2411 (2019).[22] S. M. Hus, R. Ge, P. A. Chen, L. Liang, G. E. Donnelly, W.Ko, F. Huang, M. H. Chiang, A. P. Li, and D. Akinwande,Observation of single-defect memristor in an MoS2 atomicsheet, Nat. Nanotechnol. 16, 58 (2021).[23] I. M. Datye, M. M. Rojo, E. Yalon, S. Deshmukh, M.J. Mleczko, and E. Pop, Localized heating and switchingin MoTe2-based resistive memory devices, Nano Lett. 20,1461 (2020).[24] P. J. Zomer, M. H. Guimarães, J. C. Brant, N. Tombros,and B. J. Van Wees, Fast pick up technique for high qualityheterostructures of bilayer graphene and hexagonal boronnitride, Appl. Phys. Lett. 105, 013101 (2014).[25] See Supplemental Material at http://link.aps.org/supplemental/10.1103/PhysRevApplied.18.014018 for additionalinformation, which includes Refs. [22,24,26,29,32,36–41].[26] Y. Liu, J. Guo, E. Zhu, L. Liao, S.-J. Lee, M. Ding, I. Shakir,V. Gambin, Y. Huang, and X. Duan, Approaching theSchottky–Mott limit in van der Waals metal–semiconductorjunctions, Nature 557, 696 (2018).[27] F. Bussolotti, J. Yang, H. Kawai, C. P. Y. Wong, and K.E. J. Goh, Impact of S-vacancies on the charge injectionbarrier at the electrical contact with the MoS2 monolayer,ACS Nano 15, 2686 (2021).[28] Q. Ma, P. M. Odenthal, J. Mann, D. Le, C. S. Wang, Y.Zhu, T. Chen, D. Sun, K. Yamaguchi, T. Tran, M. Wurch,J. L. McKinley, J. Wyrick, K. Magnone, T. F. Heinz,T. S. Rahman, R. Kawakami, and L. Bartels, Controlledargon beam-induced desulfurization of monolayer molyb-denum disulfide, J. Phys.: Condens. Matter 25, 252201(2013).[29] S. Tongay, J. Suh, C. Ataca, W. Fan, A. Luce, J. S. Kang,J. Liu, C. Ko, R. Raghunathanan, J. Zhou, F. Ogletree, J.Li, J. C. Grossman, and J. Wu, Defects activated photolu-minescence in two-dimensional semiconductors: Interplaybetween bound, charged, and free excitons, Sci. Rep. 3,2657 (2013).[30] D. H. Lien, S. Z. Uddin, M. Yeh, M. Amani, H. Kim, J. W.Ager, E. Yablonovitch, and A. Javey, Electrical suppressionof all nonradiative recombination pathways in monolayersemiconductors, Science 471, 468 (2019).[31] A. Jain, P. Bharadwaj, S. Heeg, M. Parzefall, T. Taniguchi,K. Watanabe, and L. Novotny, Minimizing residuesand strain in 2D materials transferred from PDMS,Nanotechnology 29, 265203 (2018).[32] S. V. Sivaram, A. T. Hanbicki, M. R. Rosenberger, G.G. Jernigan, H. J. Chuang, K. M. McCreary, and B. T.Jonker, Spatially selective enhancement of photolumines-cence in MoS2 by exciton-mediated adsorption and defectpassivation, ACS Appl. Mater. Interfaces 11, 16147 (2019).[33] S. Bae, N. Sugiyama, T. Matsuo, H. Raebiger, K. I. Shudo,and K. Ohno, Defect-induced vibration modes of Ar+-irradiated MoS2, Phys. Rev. Appl. 7, 1 (2017).[34] I. M. Datye, A. J. Gabourie, C. D. English, K. K. Smithe,C. J. McClellan, N. C. Wang, and E. Pop, Reduction ofhysteresis in MoS2 transistors using pulsed voltage mea-surements, 2D Mater. 6, 011004 (2019).[35] M. Calderara, S. Brück, A. Pedersen, M. H. Bani-Hashemian, J. VandeVondele, and M. Luisier, Pushingback the limit of ab-initio quantum transport simulations014018-7https://doi.org/10.1038/nature06932https://doi.org/10.1002/adma.200900375https://doi.org/10.1109/JPROC.2012.2190369https://doi.org/10.1109/JPROC.2010.2070050https://doi.org/10.1038/s41565-018-0302-0https://doi.org/10.1039/C9MH02033Khttps://doi.org/10.1038/s41563-018-0234-yhttps://doi.org/10.1021/acs.nanolett.5b04260https://doi.org/10.1038/nature24043https://doi.org/10.1002/adma.201806790https://doi.org/10.1002/smll.201800079https://doi.org/10.1021/acs.nanolett.7b04342https://doi.org/10.1063/1.5108899https://doi.org/10.1109/MM.2018.053631141https://doi.org/10.1021/acsami.9b15677https://doi.org/10.1021/acs.nanolett.8b05140https://doi.org/10.1038/s41565-020-00789-whttps://doi.org/10.1021/acs.nanolett.9b05272https://doi.org/10.1063/1.4886096http://link.aps.org/supplemental/10.1103/PhysRevApplied.18.014018https://doi.org/10.1038/s41586-018-0129-8https://doi.org/10.1021/acsnano.0c07982https://doi.org/10.1088/0953-8984/25/25/252201https://doi.org/10.1038/srep02657https://doi.org/10.1126/science.aaw8053https://doi.org/10.1088/1361-6528/aabd90https://doi.org/10.1021/acsami.9b00390https://doi.org/10.1103/PhysRevApplied.7.024001https://doi.org/10.1088/2053-1583/aae6a1SOTIRIOS PAPADOPOULOS et al. PHYS. REV. APPLIED 18, 014018 (2022)on hybrid supercomputers, Proc. Int. Conf. High Perform.Comput., Networking, Storage Anal. 3, 1 (2015).[36] A. Kumar, K. Schauble, K. M. Neilson, A. Tang, P.Ramesh, H. S. Wong, E. Pop, and K. Saraswat, in IEEEInternational Electron Devices Meeting (IEDM) (2021),p. 7.3.1.[37] C. D. English, G. Shine, V. E. Dorgan, K. C. Saraswat, andE. Pop, Improved contacts to MoS2 transistors by ultra-highvacuum metal deposition, Nano Lett. 16, 3824 (2016).[38] J. Hutter, M. Iannuzzi, F. Schiffmann, and J. Vandevondele,Cp2k: Atomistic simulations of condensed matter systems,Wiley Interdiscip. Rev.: Comput. Mol. Sci. 4, 15 (2014).[39] F. Ducry, A. Emboras, S. Andermatt, M. H. Bani-Hashemian, B. Cheng, J. Leuthold, and M. Luisier, inIEEE International Electron Devices Meeting (IEDM)(2017), p. 4.2.1.[40] M. Luisier, A. Schenk, W. Fichtner, and G. Klimeck, Atom-istic simulation of nanowires in the sp3d5s∗ tight-bindingformalism: From boundary conditions to strain calcula-tions, Phys. Rev. B - Condens. Matter Mater. Phys. 74, 1(2006).[41] M. Luisier and A. Schenk, Atomistic simulation ofnanowire transistors, J. Comput. Theor. Nanosci. 5, 1031(2008).014018-8https://doi.org/10.1145/2807591.2807673https://doi.org/10.1109/IEDM19574.2021.9720609https://doi.org/10.1021/acs.nanolett.6b01309https://doi.org/10.1002/wcms.1159https://doi.org/10.1109/IEDM.2017.8268324https://doi.org/10.1103/PhysRevB.74.205323https://doi.org/10.1166/jctn.2008.2539 I. INTRODUCTION II. DEVICE PREPARATION III. ELECTRICAL CHARACTERIZATION IV. QUANTUM TRANSPORT MODELING V. DISCUSSION VI. CONCLUSION ACKNOWLEDGMENTS . References<<  /ASCII85EncodePages false  /AllowTransparency false  /AutoPositionEPSFiles true  /AutoRotatePages /All  /Binding /Left  /CalGrayProfile (Dot Gain 20%)  /CalRGBProfile (sRGB IEC61966-2.1)  /CalCMYKProfile ()  /sRGBProfile (sRGB IEC61966-2.1)  /CannotEmbedFontPolicy /Warning  /CompatibilityLevel 1.4  /CompressObjects /Tags  /CompressPages true  /ConvertImagesToIndexed true  /PassThroughJPEGImages true  /CreateJobTicket false  /DefaultRenderingIntent /Default  /DetectBlends true  /DetectCurves 0.0000  /ColorConversionStrategy /LeaveColorUnchanged  /DoThumbnails false  /EmbedAllFonts true  /EmbedOpenType false  /ParseICCProfilesInComments true  /EmbedJobOptions true  /DSCReportingLevel 0  /EmitDSCWarnings false  /EndPage -1  /ImageMemory 1048576  /LockDistillerParams false  /MaxSubsetPct 5  /Optimize true  /OPM 1  /ParseDSCComments true  /ParseDSCCommentsForDocInfo true  /PreserveCopyPage true  /PreserveDICMYKValues true  /PreserveEPSInfo true  /PreserveFlatness false  /PreserveHalftoneInfo false  /PreserveOPIComments false  /PreserveOverprintSettings true  /StartPage 1  /SubsetFonts true  /TransferFunctionInfo /Apply  /UCRandBGInfo /Preserve  /UsePrologue false  /ColorSettingsFile ()  /AlwaysEmbed [ true  ]  /NeverEmbed [ true  ]  /AntiAliasColorImages false  /CropColorImages false  /ColorImageMinResolution 300  /ColorImageMinResolutionPolicy /OK  /DownsampleColorImages true  /ColorImageDownsampleType /Average  /ColorImageResolution 300  /ColorImageDepth -1  /ColorImageMinDownsampleDepth 1  /ColorImageDownsampleThreshold 1.50000  /EncodeColorImages true  /ColorImageFilter /DCTEncode  /AutoFilterColorImages true  /ColorImageAutoFilterStrategy /JPEG  /ColorACSImageDict <<    /QFactor 0.15    /HSamples [1 1 1 1] /VSamples [1 1 1 1]  >>  /ColorImageDict <<    /QFactor 0.15    /HSamples [1 1 1 1] /VSamples [1 1 1 1]  >>  /JPEG2000ColorACSImageDict <<    /TileWidth 256    /TileHeight 256    /Quality 30  >>  /JPEG2000ColorImageDict <<    /TileWidth 256    /TileHeight 256    /Quality 30  >>  /AntiAliasGrayImages false  /CropGrayImages false  /GrayImageMinResolution 300  /GrayImageMinResolutionPolicy /OK  /DownsampleGrayImages true  /GrayImageDownsampleType /Average  /GrayImageResolution 300  /GrayImageDepth -1  /GrayImageMinDownsampleDepth 2  /GrayImageDownsampleThreshold 1.50000  /EncodeGrayImages true  /GrayImageFilter /DCTEncode  /AutoFilterGrayImages true  /GrayImageAutoFilterStrategy /JPEG  /GrayACSImageDict <<    /QFactor 0.15    /HSamples [1 1 1 1] /VSamples [1 1 1 1]  >>  /GrayImageDict <<    /QFactor 0.15    /HSamples [1 1 1 1] /VSamples [1 1 1 1]  >>  /JPEG2000GrayACSImageDict <<    /TileWidth 256    /TileHeight 256    /Quality 30  >>  /JPEG2000GrayImageDict <<    /TileWidth 256    /TileHeight 256    /Quality 30  >>  /AntiAliasMonoImages false  /CropMonoImages false  /MonoImageMinResolution 1200  /MonoImageMinResolutionPolicy /OK  /DownsampleMonoImages true  /MonoImageDownsampleType /Average  /MonoImageResolution 1200  /MonoImageDepth -1  /MonoImageDownsampleThreshold 1.50000  /EncodeMonoImages true  /MonoImageFilter /CCITTFaxEncode  /MonoImageDict <<    /K -1  >>  /AllowPSXObjects false  /CheckCompliance [    /PDFX1a:2003  ]  /PDFX1aCheck false  /PDFX3Check false  /PDFXCompliantPDFOnly false  /PDFXNoTrimBoxError false  /PDFXTrimBoxToMediaBoxOffset [    33.84000    33.84000    33.84000    33.84000  ]  /PDFXSetBleedBoxToMediaBox false  /PDFXBleedBoxToTrimBoxOffset [    9.00000    9.00000    9.00000    9.00000  ]  /PDFXOutputIntentProfile (None)  /PDFXOutputConditionIdentifier ()  /PDFXOutputCondition ()  /PDFXRegistryName ()  /PDFXTrapped /False  /CreateJDFFile false  /Description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>    /CHS <FEFF4f7f75288fd94e9b8bbe5b9a521b5efa7684002000500044004600206587686353ef901a8fc7684c976262535370673a548c002000700072006f006f00660065007200208fdb884c9ad88d2891cf62535370300260a853ef4ee54f7f75280020004100630072006f0062006100740020548c002000410064006f00620065002000520065006100640065007200200035002e003000204ee553ca66f49ad87248672c676562535f00521b5efa768400200050004400460020658768633002>    /CHT <FEFF4f7f752890194e9b8a2d7f6e5efa7acb7684002000410064006f006200650020005000440046002065874ef653ef5728684c9762537088686a5f548c002000700072006f006f00660065007200204e0a73725f979ad854c18cea7684521753706548679c300260a853ef4ee54f7f75280020004100630072006f0062006100740020548c002000410064006f00620065002000520065006100640065007200200035002e003000204ee553ca66f49ad87248672c4f86958b555f5df25efa7acb76840020005000440046002065874ef63002>    /CZE <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>    /DAN <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>    /DEU <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>    /ESP <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>    /ETI <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>    /FRA <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>    /GRE <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>    /HUN <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>    /ITA <FEFF005500740069006c0069007a007a006100720065002000710075006500730074006500200069006d0070006f007300740061007a0069006f006e00690020007000650072002000630072006500610072006500200064006f00630075006d0065006e00740069002000410064006f006200650020005000440046002000700065007200200075006e00610020007300740061006d007000610020006400690020007100750061006c0069007400e00020007300750020007300740061006d00700061006e0074006900200065002000700072006f006f0066006500720020006400650073006b0074006f0070002e0020004900200064006f00630075006d0065006e007400690020005000440046002000630072006500610074006900200070006f00730073006f006e006f0020006500730073006500720065002000610070006500720074006900200063006f006e0020004100630072006f00620061007400200065002000410064006f00620065002000520065006100640065007200200035002e003000200065002000760065007200730069006f006e006900200073007500630063006500730073006900760065002e>    /JPN <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>    /KOR <FEFFc7740020c124c815c7440020c0acc6a9d558c5ec0020b370c2a4d06cd0d10020d504b9b0d1300020bc0f0020ad50c815ae30c5d0c11c0020ace0d488c9c8b85c0020c778c1c4d560002000410064006f0062006500200050004400460020bb38c11cb97c0020c791c131d569b2c8b2e4002e0020c774b807ac8c0020c791c131b41c00200050004400460020bb38c11cb2940020004100630072006f0062006100740020bc0f002000410064006f00620065002000520065006100640065007200200035002e00300020c774c0c1c5d0c11c0020c5f40020c2180020c788c2b5b2c8b2e4002e>    /LTH <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>    /LVI <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>    /NLD (Gebruik deze instellingen om Adobe PDF-documenten te maken voor kwaliteitsafdrukken op desktopprinters en proofers. De gemaakte PDF-documenten kunnen worden geopend met Acrobat en Adobe Reader 5.0 en hoger.)    /NOR <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>    /POL <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>    /PTB <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>    /RUM <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>    /RUS <FEFF04180441043f043e043b044c04370443043904420435002004340430043d043d044b04350020043d0430044104420440043e0439043a043800200434043b044f00200441043e043704340430043d0438044f00200434043e043a0443043c0435043d0442043e0432002000410064006f006200650020005000440046002c0020043f044004350434043d04300437043d043004470435043d043d044b044500200434043b044f0020043a0430044704350441044204320435043d043d043e04390020043f043504470430044204380020043d04300020043d043004410442043e043b044c043d044b04450020043f04400438043d044204350440043004450020043800200443044104420440043e04390441044204320430044500200434043b044f0020043f043e043b044304470435043d0438044f0020043f0440043e0431043d044b04450020043e0442044204380441043a043e0432002e002000200421043e043704340430043d043d044b04350020005000440046002d0434043e043a0443043c0435043d0442044b0020043c043e0436043d043e00200020043e0442043a0440044b043204300442044c002004410020043f043e043c043e0449044c044e0020004100630072006f00620061007400200438002000410064006f00620065002000520065006100640065007200200035002e00300020043800200431043e043b043504350020043f043e04370434043d043804450020043204350440044104380439002e>    /SKY <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>    /SLV <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>    /SUO <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>    /SVE <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>    /TUR <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>    /UKR <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>    /ENU (Use these settings to create Adobe PDF documents for quality printing on desktop printers and proofers.  Created PDF documents can be opened with Acrobat and Adobe Reader 5.0 and later.)  >>  /Namespace [    (Adobe)    (Common)    (1.0)  ]  /OtherNamespaces [    <<      /AsReaderSpreads false      /CropImagesToFrames false      /ErrorControl /WarnAndContinue      /FlattenerIgnoreSpreadOverrides false      /IncludeGuidesGrids false      /IncludeNonPrinting false      /IncludeSlug false      /Namespace [        (Adobe)        (InDesign)        (4.0)      ]      /OmitPlacedBitmaps false      /OmitPlacedEPS false      /OmitPlacedPDF false      /SimulateOverprint /Legacy    >>    <<      /AddBleedMarks true      /AddColorBars false      /AddCropMarks true      /AddPageInfo true      /AddRegMarks false      /BleedOffset [        9        9        9        9      ]      /ConvertColors /NoConversion      /DestinationProfileName ()      /DestinationProfileSelector /NA      /Downsample16BitImages true      /FlattenerPreset <<        /PresetSelector /MediumResolution      >>      /FormElements false      /GenerateStructure true      /IncludeBookmarks true      /IncludeHyperlinks true      /IncludeInteractive false      /IncludeLayers false      /IncludeProfiles false      /MarksOffset 6      /MarksWeight 0.250000      /MultimediaHandling /UseObjectSettings      /Namespace [        (Adobe)        (CreativeSuite)        (2.0)      ]      /PDFXOutputIntentProfileSelector /NA      /PageMarksFile /RomanDefault      /PreserveEditing true      /UntaggedCMYKHandling /LeaveUntagged      /UntaggedRGBHandling /LeaveUntagged      /UseDocumentBleed false    >>    <<      /AllowImageBreaks true      /AllowTableBreaks true      /ExpandPage false      /HonorBaseURL true      /HonorRolloverEffect false      /IgnoreHTMLPageBreaks false      /IncludeHeaderFooter false      /MarginOffset [        0        0        0        0      ]      /MetadataAuthor ()      /MetadataKeywords ()      /MetadataSubject ()      /MetadataTitle ()      /MetricPageSize [        0        0      ]      /MetricUnit /inch      /MobileCompatible 0      /Namespace [        (Adobe)        (GoLive)        (8.0)      ]      /OpenZoomToHTMLFontSize false      /PageOrientation /Portrait      /RemoveBackground false      /ShrinkContent true      /TreatColorsAs /MainMonitorColors      /UseEmbeddedProfiles false      /UseHTMLTitleAsMetadata true    >>  ]>> setdistillerparams<<  /HWResolution [2400 2400]  /PageSize [612.000 792.000]>> setpagedevice