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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol.40] Breakthrough in Printed Electronics Enables Device Formation at Room Temperature](https://mdr.nims.go.jp/datasets/f844b4f2-a40c-4848-ac6d-006e604311ef)

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2022/04/04 10:05 Breakthrough in Printed Electronics Enables Device Formation at Room Temperature| MANAhttps://www.nims.go.jp/mana/research/highlights/vol40.html 1/3Previous  Index  NextResearch Highlights[Vol. 40]Breakthrough in Printed Electronics Enables Device Formation at RoomTemperature1 Jul, 2018Figure: Multilayered structures of single OTFTs, and homogeneous integration of OTFT devices intolarge-scale OTFT array; and image of short-channel OTFTs spontaneously fabricated on the plasticsubstrate, photograph of a bottom-contact/top-gate OTFT.Printing electronic devices and circuits on flexible substrates offers the possibility of low cost, massproduction of high performance organic thin film devices using technology such as “roll-to-roll”.However, conventional printing technology necessities processing at elevated temperatures ofabout 150°C, which damages flexible substrates causing degradation of device performance andlimits the minimum feature sizes of devices.The high temperature step is necessary to remove non-conductive ligands attached to metalnanoparticles (NP) used in the printing ink that is used for fabricating electrodes.To resolve this issue Takeo Minari and colleagues at the World Premier International Center forMaterials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science (NIMS),Tsukuba, Japan have succeeded in printing organic field effect transistor (OFET) circuits on flexiblesubstrates at room temperature. Importantly, the devices show remarkable performance asexemplified by the high average mobility of 8 cm2 V-1 s-1 of devices, that is necessary for practicalapplications.https://www.nims.go.jp/mana/research/highlights/vol39.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol41.html2022/04/04 10:05 Breakthrough in Printed Electronics Enables Device Formation at Room Temperature| MANAhttps://www.nims.go.jp/mana/research/highlights/vol40.html 2/3Furthermore, Xuying Liu and colleagues fabricated large‐scale, complex electronic circuits withhigh resolution (1 μm). The prepared organic thin‐film transistors exhibit a low contact resistanceof 1.5 kΩ cm, and high mobilities of 0.3 and 1.5 cm2 V−1 s−1 in the devices with channel lengthsof 1 and 5 μm, respectively.Kanehara, Minari and colleagues developed so called π-junction gold NPs (AuNPs) that are coveredwith phthalocyanine conductive ligands and do not require annealing to produce electricalconduction after ink printing.Importantly, the electrical resistivity of AuNPs is approximately 9 × 10−6 Ω cm, which is almost thesame as pure Au. This approach works without annealing because the charge is transportedbetween nanoparticles via the conductive ligands.“The importance of these results is that electronic circuit can be formed by simply applying ink atroom temperature under normal atmospheric conditions,” says Minari. “This breakthrough meansthat circuits can be easily fabricated on the surfaces of materials that are sensitive to heat such aspaper and plastics. Also, printed circuits can be produced with precision down to one micrometer,thereby making this a practical technology for real life applications.”Reference“Room-Temperature Printing of Organic Thin-Film Transistors with π -Junction Gold Nanoparticles”Takeo Minari, Yuki Kanehara, Chuan Liu, Kenji Sakamoto, Takeshi Yasuda, Asuka Yaguchi, ShigemiTsukada, Kei Kashizaki, and Masayuki KaneharaJournal : Adv. Funct. Mater. 24, 4886–4892, (2014).DOI : 10.1002/adfm.201400169“Spontaneous Patterning of High-Resolution Electronics via Parallel Vacuum Ultraviolet”Xuying Liu, Masayuki Kanehara, Chuan Liu, Kenji Sakamoto, Takeshi Yasuda, Jun Takeya, andTakeo MinariJournal : Adv. Mater. 28, 6568–6573, (2016).DOI : 10.1002/adma.201506151AffiliationsInternational Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for MaterialsScience (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanContact informationInternational Center for Materials Nanoarchitectonics(WPI-MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 Japanhttps://onlinelibrary.wiley.com/doi/full/10.1002/adfm.201400169https://onlinelibrary.wiley.com/doi/full/10.1002/adma.2015061512022/04/04 10:05 Breakthrough in Printed Electronics Enables Device Formation at Room Temperature| MANAhttps://www.nims.go.jp/mana/research/highlights/vol40.html 3/3Phone: +81-29-860-4710E-mail: mana-pr[AT]ml.nims.go.jp