# Fileset

[Supplementary_material.pdf](https://mdr.nims.go.jp/filesets/038bef00-0b0f-4f7e-833a-448234fb8c82/download)

## Creator

[Takayoshi Oshima](https://orcid.org/0000-0001-8550-9735), [Yuichi Oshima](https://orcid.org/0000-0001-8293-4891)

## Rights

This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in akayoshi Oshima et al., Appl. Phys. Lett. 124, 042110 (2024) and may be found at https://doi.org/10.1063/5.0186319.[In Copyright](http://rightsstatements.org/vocab/InC/1.0/)

## Other metadata

[Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches](https://mdr.nims.go.jp/datasets/575c0527-225d-4519-abd6-14d9b31db681)

## Fulltext

Microsoft Word - Supplementary material.docxSupplementary material Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches  Takayoshi Oshimaa) and Yuichi Oshima  Research Center for Electronic and Optical Materials, National Institute for Materials Science, Tsukuba, Ibaraki 305-0044, Japan a)Author to whom correspondence should be addressed: OSHIMA.Takayoshi@nims.go.jp  1. Schematic of our halide vapor phase epitaxy/etching (HVPE) system Figure S1 illustrates the gas flows in our HVPE system in selective area growth and selective area etching scenarios. See the Experimental section of the paper for the details.  Fig. S1. Schematic of our halide vapor phase growth/etching system, illustrating gas flows for both growth and etching cases. Process zone: 1038oCPartial pressure: P(GaCl)/P(O2)/P(HCl) = 0/0/62.5 PaCarrier gas:  N2Total pressure: 100 kPa (atmospheric pressure)Etching time:  10 minGaEtching lineSource zone: 822oCProcess zone: 1038oCPrecursor linesPartial pressure: P(GaCl)/P(O2)/P(HCl) = 0.125/1.25/0.25 kPaCarrier gas:  N2Total pressure: 100 kPa (atmospheric pressure)Growth time:  15 minGaO2+N2GaCl+N2Etching lineHCl+N2Source zone: 822oCO2+N2HCl+N2 SiO2 masked ( 02) β-Ga2O3 substrateRotating shaftSiO2 masked ( 02) β-Ga2O3 substrateRotating shaftSelective area etchingSelective area growthHCl+N2N2N2N2N2HCl+N2 HCl+N2