# Fileset [AMT-Diamond multifunctional sensor-20240403-clean.docx](https://mdr.nims.go.jp/filesets/02b601ee-1ca7-4f84-9095-3d861e34e546/download) ## Creator Zilong Zhang, Keyun Gu, Guo Chen, Liwen Sang, [Tokuyuki Teraji](https://orcid.org/0000-0002-7731-0547), [Yasuo Koide](https://orcid.org/0000-0001-8321-9822), [Satoshi Koizumi](https://orcid.org/0000-0003-4961-5658), Masaya Toda, [Meiyong Liao](https://orcid.org/0000-0003-1361-4266) ## Rights This is the peer reviewed version of the following article: Zhang, Z., Gu, K., Chen, G., Sang, L., Teraji, T., Koide, Y., ... & Liao, M. (2024). Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms. Advanced Materials Technologies, 2400153., which has been published in final form at https://doi.org/10.1002/admt.202400153 This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. 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The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.[In Copyright](http://rightsstatements.org/vocab/InC/1.0/) ## Other metadata [Highly Reliable Diamond MEMS Dual Sensor for Magnetic Fields and Temperatures with Self‐Recognition Algorithms](https://mdr.nims.go.jp/datasets/0558b0ac-a8c1-4bb2-b228-2a4b9617837e) ## Fulltext Highly reliable diamond MEMS dual sensor for magnetic fields and temperatures with self-recognition algorithmsZilong Zhang1, Keyun Gu1, Guo Chen1, Liwen Sang1, Tokuyuki Teraji1, Yasuo Koide1, Satoshi Koizumi1, Masaya Toda2 & Meiyong Liao1*1Research Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan.2 Graduate School of Engineering, Tohoku University, Sendai, Miyagi 9808579, JapanCorrespondence should be addressed to Meiyong Liao* (Email: meiyong.liao@nims.go.jp)Abstract Neary all sensors inevitably suffer from environment influence such as temperature fluctuation. To precisely process the external signals, independent temperature compensation devices or electronical circuits are usually required, making the overall system and algorithms sophisticated. Especially, when the environment temperature is as high as over 200oC, both the sensors and temperature-compensation devices encounter the reliability problem. In this work, we demonstrate an intelligent multifunctional sensor utilizing single-crystal diamond (SCD) microelectromechanical (MEMS) resonators that can sense both magnetic fields and temperatures up to 300℃, independently. Our strategy is to integrate a magnetostrictive thin film and a non-magnetic thin film on different diamond MEMS resonators on the same diamond chip for simultaneous magnetic field sensing and temperature monitoring, respectively. The multi-resonators based on diamond MEMS offers a promising platform for multi-parameter sensing immune to environment interference.Keywords: Single-crystal diamond, multifunctional sensor, MEMS, self-recognition1 IntroductionThe next-generation sensing systems, termed intelligent sensor, possesses capabilities of multi-parameter detection, self-diagnosis, data processing, and adaptation to external information.[1-4] Multifunctional sensors (MFSs), regarded as the kernel of the intelligent sensing system, are essential in diverse applications that require the sensing of multiple physical, chemical, and environmental parameters within a highly integrated system, as well as in the context of miniaturization and the Internet of Things (IoT).[5-9] In many scenarios ranging from timing devices to rotation speed in aerospace craft, high-accuracy and high-stability sensors are pursued, which should reduce the environmental temperature influence. Temperature compensation, usually performed by hardware through built-in analog circuits, is thus required to maintain the sensing accuracy of the external parameters. However, the analog circuits themselves are susceptible to temperature fluctuation and cannot work at high temperatures over 200℃. Particularly, magnetic field and temperature are critical merits to impact the physical-chemical processes, determine the materials properties, and assess the device performances both in scientific researches and industrial manufacturing.[9-13] The MFSs, simultaneously monitoring magnetic fields and temperatures with high accuracy, have attracted great interest in the applications of health care and infrastructures maintenance, especially for harsh environments such as mineral/oil exploration, space exploration, high-temperature magnetic valves, and engine and transmission speed control in automobiles. To precisely detect the magnetic field, one strategy is developing dual-mode sensors, which can simultaneously sense two physical parameters and provide interference-free output signals of magnetic fields and temperatures.[9, 12, 14] Currently, the dual-sensing of magnetic field and temperature primarily include quantum sensors,[11, 12, 15] optical fiber sensors,[14, 16] and surface acoustic wave (SAW) sensor[9]. However, these MFSs encounter the issues of weak reliability and limited working temperature (<200℃), which hinders the potential in practical applications under extreme conditions. In the realm of quantum sensors, marked by their heightened sensitivity, the controllability of the nitrogen-vacancy (NV) center and the electrical readout of NV signals presents a significant challenge.[11, 12, 17] Concerning optical fiber sensors, the sensitivity and operational temperature are constrained by the fabricated materials exhibiting weak thermal stability and a bulky structure.[14, 16, 18] For the SAW sensors, the actuation method employing the piezoelectric material becomes ineffective as the temperature rises, revealing constrained thermal reliability and sensitivity.[9] The development of the high-reliability and high-sensitivity MFS with simultaneously monitoring magnetic field and temperature is in demand under harsh environments.Microelectromechanical systems (MEMS) sensors represent a prevailing trend in the contemporary sensor landscape owing to the merits of batch fabrication, controllability in dimensions down to the nanoscale, low power consumption, low cost, high sensitivity, and high integration.[19] Single-crystal diamond (SCD) offers great potential as a material for developing high-performance and high-reliability MEMS devices due to its exceptional mechanical strength, thermal stability, and chemical inertness.[20-24] Galfenol (FeGa) demonstrates a significant magneto-strictive coefficient and outstanding thermal stability, boasting an ultra-high Curie temperature of 675°C.[25] Diamond MEMS resonators coupled with soft magnetic films have been developed for high-temperature magnetic transducers with high thermal-stability and high-sensitivity.[26, 27] Alternatively, the tungsten carbide (WC) and titanium (Ti) have advantages of high thermal stability and high oxidation resistance over 500℃.[28] The combination of diamond with FeGa film and WC film in MEMS technology harnesses the strengths of these materials, resulting in high-sensitivity and high-reliability devices at high temperatures.In this work, we demonstrate a smart and compact dual-mode sensors for magnetic fields and temperatures up to 300oC by using different SCD microresonators integrated with a FeGa/Ti film and a WC/Ti film separately on the same diamond chip to overcome the challenge of conventional MFSs with poor thermal stability and reliability. The mismatch of thermal expansions of WC/Ti/diamond materials is proposed to realize the temperature monitoring and the magnetostrictive effect of the FeGa film in FeGa/Ti/diamond architecture is utilized to fulfil high-temperature magnetic sensing, independently. The present MFS demonstrates real-time sensing performances of a temperature sensitivity of -30.5 ppm/℃ and a magnetic sensitivity of 9.81 Hz/mT at 300℃, outperforming sensors relying on alternative semiconductor materials. By multifunctionalizing diamond MEMS with diverse materials, the sensors exhibit self-recognition of multi-parameters with a simple algorithm and are immune to the environment fluctuations2 Results and discussion2.1 Device concept and architectureThe SCD resonators offer a high-reliability, compact and wisdom platform to fabricate the MFS with high thermal reliability. On the same diamond chip, a diamond resonator deposited with a FeGa/Ti film is employed for realizing the magnetic sensor and another diamond resonator with a WC/Ti film is utilized for temperature sensing. The mismatch of coefficient of thermal expansion (CTE) of multilayer materials provides the basic principle of temperature monitoring for the WC/Ti/diamond sensor.[29, 30] The classic magnetostrictive effect (∆E effect) of the ferromagnetic FeGa thin film was regarded as high-temperature magnetic sensing mechanism for the FeGa/Ti/diamond sensor.[26, 27, 31] These two physical effects are integrated on the same diamond chip to realize real-time multifunction of temperature monitoring and magnetic sensing independently. The temperature is assessed by utilizing the resonance frequency shift of the WC/Ti/diamond resonator, while the magnetic field is evaluated by employing the resonance frequency shift due to the external magnetic field of the FeGa/Ti/diamond resonator. Particularly, the temperature monitored by the WC/Ti/diamond resonator sensor is compensated and verified by the thermal response of the pristine diamond resonators without any depositions. For a rectangle mechanical resonator, the Euler-Berboulli theory was employed to illustrate the vibration characteristics [32, 33]. The resonance frequency can be expressed as, (1)For the first vibration mode of resonator, k is 0.162. t and L are the thickness and the length of the resonator, respectively. E and are Young’s modulus and mass density of the resonator material, respectively. The resonance frequency shift, ΔfT is utilized to indicate the thermal response of a resonator sensor to temperature variations, which is expressed as, (2)wherein fj and fi represent the resonance frequencies of the resonator under the evaluated temperatures of Tj and Ti, respectively. The temperature responsivity of a microresonator, referred to the temperature coefficient of resonance frequency (TCF). For a compact microresonator, the TCF indicates the relative shift of resonance frequency with temperature, which is indicated as [34-36], (3)f0 is the resonance frequency at room temperature (25oC). Utilizing the ΔE effect, the magnetic field response of the multilayer resonator sensor is characterized as the shift in resonance frequency, as shown, (4)where fH and f0 are resonance frequencies of the magnetic sensors at the magnetic fields of H and 0 mT, respectively. Based on the temperature and magnetic field sensing principle, the MFS utilizing diamond-based microresonators possess the merits of high intelligence to distinguish temperature and magnetic field high reliability up to 300℃ and simple algorithms. The MFS can be employed for four conditions with varying magnetic fields and temperatures, as schematically shown in Figure 1a, including 1) no magnetic field and no temperature variation (with a baseline of 25℃), 2) no magnetic field but with temperature variation, 3) with a magnetic field and no temperature variation, 4) with magnetic field and temperature variations.Figure 1. Characterization of multifunctional sensors (MFS) based on SCD resonators for magnetic sensing and temperature monitoring. a) Illustration of potential conditions for utilizing MFS in assessing magnetic field and temperature data within the context of a smart robot device. The resonance frequency shift of the WC/Ti/SCD resonator is utilized to indicate the evaluate the temperature. The resonance frequency shift of the FeGa/Ti/SCD resonator is employing to assessing the magnetic field. T1 and T2 indicate the different temperatures for the measurement conditions. b) Simulation of the electric potential distribution for the actuation of a diamond-based resonator. The actuation voltage is 1 V. c-d) Laser optical images for MFS within 2D and 3D views.Figure S1 illustrates the fabrication process of the diamond MFS. The SCD cantilevers were fabricated by a smart-cut method[37] based on the ion-implantation assisted lift-off (IAL) technology,[38] initiates with the ion-implantation into high temperature and high pressure (HTHP) type-Ib (100) SCD substrate with root mean square (RMS) surface roughness lower than 1 nm. The growth of SCD epilayer was accomplished by using a microwave plasma chemical vapor deposition (MPCVD) system. The advantages of the epilayer growth are 1) the great enhancement in crystal quality of diamond compared to HTHP diamond, 2) the accurate control of thickness of diamond resonator. The ion-damaged layer was converted to a graphite-like layer during the CVD growth, which acted as a sacrificial layer to release the resonator structures. Due to the existence of non-diamond layer on the backside of resonator, the Q factors of the SCD cantilevers are limited. The annealing treatment in the O2 ambient was employed to remove this non-diamond layer to enhance the Q factor,[39] as shown in Figure S1g and Figure S2 (Supporting Information). To perform dual sensing of temperature and magnetic field, the FeGa film (90 nm thickness)/Ti film (10 nm) and WC (10 nm)/Ti film (90 nm) were deposited on the SCD resonators at different locations on the same SCD chip via a magnetron sputtering system, respectively (Figure S1h-j). The magnetic sensing is accomplished with the architecture of FeGa/Ti/SCD and the temperature monitoring is performed with the structure of WC/Ti/SCD. A dielectric actuation was adopted to generate the vibration of the resonators. The electric field distribution of the diamond-based resonator was simulated via utilizing the COMSOL software with the actuation voltage of 1 V (Figure 1b). It is indicated that the electric field confined around the diamond resonator to actuation the oscillation movement. The optical images of the temperature monitor and magnetic sensor on the same diamond chip are exhibited in Figure 1c-d. The RMS measured by atomic force microscopy (AFM) of the FeGa thin film on diamond was around ~ 0.95 nm at room temperature and experienced little change (~ 1 nm) at 300℃ for 1 hour. The RMS of WC/Ti/diamond was 3.23 nm at room temperature and ~3.73 nm at 300oC for 1 hour. (Figure S3). The coercive magnetic field of the FeGa (90 nm) on Ti/SCD was ~ 17.9 Oe (Figure S4). The crystal orientations of FeGa film on Ti/SCD and WC/Ti film on SCD exhibit weak change before and after the annealing treatment under 300℃ for 1 hour (Figure S4). A Doppler vibrometer was employed to assess the out-of-plane resonance characteristics of diamond resonators [40, 41].2.2 Thermal stability of diamond microresonatorsFor a micromechanical resonator, a high Q factor is typically advantageous. The high Q factor enhances the actuation efficiency, reduces vulnerability to mechanical noise,[42] increases sensitivity to the minimum detectable force,[43, 44] and ensures stability even under extreme conditions[26, 27]. In this work, the etching in oxygen ambient presents a viable approach to eliminate the defective-diamond layer and other imperfections,[45-48] in return, enhance the Q factors (Figure S2). The Q factor of a 160 μm-length diamond resonator increases from 3755 to 6333 after undergoing the etching treatment for 10 hours (Figure S2f). Based on the bare diamond resonators with enhanced Q factors, the thermal responses of diamond resonators to the evaluated temperatures were measured during a heating-cooling process. The measurement configuration of resonance performance is schematically shown in Figure 2a. The electrostatic force between the resonator and the electrode on the diamond substrate was utilized to actuate of the resonator. The details of the actuation of diamond resonator was illustrated in our previous work.[31] The dependence of resonance spectrum of a diamond resonator (L=160 μm) on the actuation amplitude under 500℃ (Figure S5). The actuation voltage has weak impact on the resonance frequency of the diamond resonator. The variation of the resonance spectrum of a 140 μm-length diamond resonator (resonator I) with the temperature is depicted in Figure 2b. The temperature increasing leads to the shift of resonance frequency toward low frequency. The negative dependence of E on temperature is expressed by an empirical equation, E=ET0-CTexp(-T0/T).[26, 49] ET0 is the Young’s modulus at the temperature of T0. C is a constant independent of temperature. T0 is a temperature related to the diamond Debye temperature, namely, T0=ΘD/2. Therefore, the decrease in resonance frequency is attributed to the reduce in E caused by the increasing temperature. The dependence of the resonance frequencies of the two resonators (resonator I and resonator II) on the measurement temperature during the heating-cooling process is shown in Figure 2c. The slight difference in the resonance frequency between resonator I and II is possibly due to the inhomogeneous defects in the SCD epilayer. The resonator I and resonator II are applied to fabricate the temperature sensor and magnetic sensor, respectively. It is shown that the resonance frequencies of these two resonators are almost identical with response to the temperature during the heating-cooling process, showing the high thermal stability and reproducibility of the diamond resonators. The resonance frequency shift is defined in Eq. (2). fT and f0 are resonance frequencies under the temperatures of T and 25℃, respectively, as shown in Figure 2d. In addition, the change of Q factors with temperature is manifested in Figure 2e. It is revealed that the Q factors of these two diamond resonators first decrease with the temperature increasing as temperature below 400℃ and then increase with temperature. The sudden increase in Q factor under temperature above 400℃ is due to the interaction between phonons and deep defects activated at assessed temperatures.[50] The TCFs of these two diamond resonators demonstrate a negative temperature dependence, with values varying from approximately -3.0 to -10.9 ppm/℃ across the temperature range of 25 to 500℃ (Figure 2f). Table 1 summarizes the TCFs of various MEMS resonators fabricated from various wide bandgap semiconductors. It is revealed that the TCF of diamond resonator shows the lowest value. The low TCF ensures the diamond resonator is regarded as a thermally-stable sensor to compensate and verify the evaluated temperature for the WC/Ti/diamond temperature sensor.Figure 2. Measurement setup and resonance vibration performances of SCD resonators under heating-cooling process. a) Schematic illustration of the measurement setup with an optical readout system. LPF: Low Pass Filter. b) Resonance spectra of a 140 µm-length SCD resonator (named resonator I) shift downward with the temperature increasing. The resonator I is utilized to fabricate the temperature sensor. c-e) Variations in resonance frequencies, resonance frequency shifts, and Q factors of resonator I and resonator II with varying temperatures during the heating-cooling process. The resonator II is employed for fabricating the magnetic sensor. f) Thermal coefficient of resonance frequencies (TCF) of resonator I and resonator II as a function of temperatures. The TCF is defined in Eq. (3).Table 1 Comparison of TCFs of MEMS resonators made of various wide bandgap semiconductors Materials Structure TCF (ppm/°C) Temperature range Refs. Si Resonator -24.1 to -30.2 -40°C to 60°C [34] GaN Nanowire 40 -261 to 47°C [51] SiC Microdisk 29.2 10 to 60°C [52] Ga2O3 Bridge -720 to -1710 30 to 110°C [53] AlN Resonator -106 −40 to 85°C [54] SiN Cantilever -57.4 -243 to 25°C [55] GaAs Tuning fork -48 to -59 -10 to 70 [56] Diamond cantilever -3.0 to -10.9 25 to 500°C This work WC/Ti/diamond cantilever -19.5 to -30.5 25 to 300°C This work FeGa/Ti/diamond cantilever -11.3 to -17.4 25 to 300°C This work2.3 Temperature monitoring by WC/Ti/diamond microresonator sensorTemperature monitoring plays a crucial role in various fields such as manufacturing processes, environmental monitoring, structural safety assurance, agriculture, and food quality assessment.[29] The temperature responsivity, commonly known as the TCF, acts as a crucial performance metric that characterizes the sensitivity of a sensor to changes in temperature. Conventionally, the technique via using multiple-materials with different coefficients of thermal expansion (CTE) has been proposed to develop the temperature monitor sensors.[29, 30] However, these temperature sensors encounter the issues of the limited TCF and modest thermal stability. In this work, after the multi-growth processes of different films, the 140 μm-length resonators are intact and proposed to act as sensors for temperature and magnetic sensors. A hybrid structure of SCD resonator I coupling with a WC/Ti film is utilized as the temperature sensor (Sensor I). These three materials have different CTEs, which ensures the credibility of temperature sensing [57-59]. The FeGa/Ti film was deposited on SCD resonator II to fabricate the magnetic sensor. In the multilayer structure of WC/Ti/SCD, WC is acted as a protective layer to avoid oxidation. In addition, due to the existence of the CTE mismatch between FeGa film and SCD, the FeGa/Ti/SCD MEMS architecture also shows response to temperature. However, the thermal response can be calibrated by the WC/Ti/SCD resonator. Figure 3a shows the relationship between resonance spectrum and actuation voltage of the temperature sensor. The peak amplitude of resonance frequency exhibits a linear dependence on voltage (the inset of Figure 3a). In addition, the temperature increasing leads to the downward shift of resonance spectrum (Figure 3b). The resonance frequency and Q factor of the temperature sensor with the WC/Ti/SCD structure (L=140 μm) show a strong dependence on the evaluated temperature during the heating-cooling process (Figure 3c, d). The temperature sensor exhibits weak changes in resonance frequency and Q factor at the same temperature during heating-cooling process. It is revealed that the temperature sensor achieves high thermal-stability of resonance characteristics at different temperatures. The resonance frequency of the temperature sensor decreases with the temperature increasing due to the reduction in the Young’s modulus of the multilayer structure. The trend of Q factor of the temperature sensor shows a negative temperature-dependence (Figure 3d). Based on Eq (2), the resonance frequency shift, ∆fT’ of the temperature sensor is defined as |fT’-fT0’|. The fT’ and fT0’ represent resonance frequencies of sensors as the evaluated temperature of T and 25℃, respectively. The ∆fT’’ is defined as resonance frequency shift of the FeGa/Ti/SCD resonator sensor due to the temperature variations in Figure S6. The ∆fT’/∆T is another critical feature to indicate the temperature response of sensor. The variation of ∆fT’ of the temperature sensor with the temperature is shown in Figure 3e. The ∆fT’ linearly increases with the temperature. The ∆fT’/∆T of the temperature sensor achieves a value of 2.20 Hz/℃ with temperatures ranging from 25℃ to 200℃ and a value of 2.78 Hz/℃ within the temperatures of 200℃ to 300℃. In addition, based on Eq. (3), the dependence of TCF of the temperature sensor on temperature is depicted in Figure 3f. The TCF increases with the temperature increasing, showing the values ranging from -19.5 ppm/℃ at 25℃ to -30.5 ppm/℃ at 300℃. It is disclosed that the TCF of the temperature sensor the is greatly larger than that of the pure diamond resonator I without the deposition of WC/Ti film (Figure 2f). Therefore, the deposition of WC/Ti film is in favor of enhance the resonance frequency shift to ensure high temperature sensitivity as the temperature sensor. Alternatively, the TCF of the temperature sensor is higher than that of the FeGa/Ti/diamond resonator (Figure S7). The frequency fluctuation (FF) refers to the ratio of the frequency variation to the resonance frequency with time at a certain temperature. which is used to determine the frequency stability and temperature accuracy of the temperature sensor. The absolute FF of the WC/Ti/SCD microresonator sensor can maintain lower than 1.21×10-4 at room temperature, indicating a high frequency stability (Figure S8a). Taking the temperature sensitivity in Figure 3e into account, the accuracy of the temperature reaches 1.49℃ (the absolute average frequency variation is 3.28 Hz). The reasons for WC/Ti/diamond sensor with high sensitivity, wide working temperature range, and high thermal-stability are attributed to: 1) large thermal expansion mismatch between films (Ti of 21.21 ppm/°C,[58] WC of 5.3 ppm/°C[60]) and diamond, 2) high thermal stability of the interface.Figure 3. Temperature monitoring of WC/Ti/SCD microresonator sensor. a) Variation of resonance spectrum of the temperature sensor (L=140 μm) on actuation voltage at 300℃. b) Resonance spectrum of the temperature shift downward with the temperature increasing. c-e) Dependences of resonance frequency, Q factor, and resonance frequency shift of the temperature sensor on evaluated temperatures. The resonance frequency shift, ∆fT’ is defined as fT’-fT0’. The fT’ and fT0’ represent resonance frequencies of sensors as the evaluated temperature of T and 25℃, respectively. The ∆fT’/∆T is a critical merit to characterize temperature monitoring performance of sensor. f) TCF of the temperature sensor vs the evaluated temperature. 2.4 Magnetic sensing by FeGa/Ti/diamond microresonator sensorFigure 4. Magnetic sensing performances of FeGa/Ti/SCD resonator sensor. a) Resonance spectrum of the magnetic sensor (L=140 μm) vs actuation voltage at 300℃. b) Schematic diagram of resonance spectra shifts of sensor II (L = 140 μm) response to a magnetic field (H = 4.73 mT) at evaluated temperatures. c-d) Dependences of resonance frequencies and Q factors of the magnetic sensor under different magnetic fields on evaluated temperatures during heating-cooling process. e) Resonance frequency shift dependence of magnetic field under varying temperatures. The resonance frequency shift response to magnetic field, ∆fH is defined as fH-f0. f) Variation of dE/dH of the magnetic sensor as a function of magnetic field under varying temperatures.Regarding the high-temperature magnetic sensor, it is worth mentioning that magneto-resistive sensors and Hall sensors have been developed.[61] The drawbacks of interfacial diffusion and scattering process for magneto-resistive sensors and carrier mobility deterioration and the high power consumption for Hall sensors hinder the thermal-stability and high sensitivity at harsh conditions.[62, 63] In this work, the SCD resonator with high thermal-stability coupling with a magnetostrictive FeGa film with high Curie temperature are utilized to fabricate the multilayer structure to realize the high temperature MEMS magnetic sensors (Sensor II). The device architecture guarantees both excellent thermal stability and heightened sensitivity, attributable to 1) the robust thermal-stable interface between the FeGa/Ti and the SCD resonator, and 2) the high thermal-stability of magnetostrictive properties of the FeGa film. In addition, the magnetic response of the WC/Ti/diamond sensor is also examined. It is indicated that the no resonance frequency shift appears for the WC/Ti/SCD sensor as applying magnetic fields (Figure S9). The magnetic field also has no influence on the thermal response of the WC/Ti/SCD sensor at the specified temperatures (Figure S10). In Figure 4a, it is evident that the peak amplitude of the resonance frequency demonstrates a linear relationship with the applied voltage. Figure 4b schematically shows the resonance spectrum shift of a FeGa/Ti/SCD sensor (L=140 μm) without and with applying a magnetic field (H=4.73 mT) at different measurement temperatures. The actuation voltage exhibits weak impact on the resonance frequency of the FeGa/Ti/SCD sensor (Figure 4a). The dependences of resonance frequency and Q factor of the FeGa/Ti/diamond sensor on the evaluated temperature are exhibited in Figures 4c, d, respectively. The ΔfH of the FeGa/Ti/diamond resonator sensor defined in Eq. (4), is utilized to indicate the response to the magnetic fields. The resonance frequency of the magnetic sensor decreases as the temperature rises, attributed to the decrease in the Young’s modulus of the structure of magnetic sensor. The consistency of the resonance frequency shift of the FeGa/Ti/diamond sensor throughout the heating-cooling process, as depicted in Figure 4c, owns the remarkable thermal stability. This is further evidenced by the temperature-dependent variation in the Q factor, which remains above 2000 up to 300℃ (Figure 4d). The temperature-dependent frequency shift under varying magnetic fields is depicted in Figure 4e, demonstrating a linear increase with the magnetic field. Notably, the magnetic sensor showcases a linear increase of magnetic sensitivity with the temperature, achieving its highest sensitivity of 9.81 Hz/mT at 300℃ (Figure S11). The FeGa/Ti/SCD sensor consistently achieves an absolute FF below 1.06×10-4 at room temperature (Figure S8b). Considering the magnetic sensitivity illustrated in Figure 4e, the magnetic field accuracy is estimated to be 0.46 mT. Similar resonance frequency responses to the external magnetic field were observed in other diamond-based sensors, as depicted in Figure S12. In addition, The rate of change of Young's modulus with respect to the magnetic field (dE/dH) serves as a crucial metric for assessing the magnetic sensitivity of magnetic sensors.[64] For a magnetic sensor, the expression for the derivative of E with respect to the magnetic field (dE/dH) is given by dE/dH=(dE/df)×(df/dH). Where df/dH is the magnetic sensitivity under the evaluated temperature. Based on the Eq. (1), the dE/df is equal to 2E/f. Thus, the dE/dH=(2E/f)×(df/dH). The dependence of dE/dH on the magnetic field (H) during the heating process is shown in Figure 4f. To some extent, the dE/dH increases with the temperature increasing. Additionally, the temperature enhances the dE/dH at a certain magnetic field. The dE/dH increases to the high value of 0.80 GPa/mT at 4.73 mT and 300℃, underscoring the robust reliability of the present FeGa/Ti/SCD magnetic sensor. Moreover, by achieving the correlation of frequency shift with the applied magnetic field, we assessed the magnetic noise levels of the magnetic sensor at both 300 and 773 K. In an alternative approach, the intrinsic magnetic noise (bn) of a magnetic sensor is determined by the thermomechanical noise, as expressed,[65, 66] (5)wherein the 0(dH/df) is the magnetic sensitivity. is the axial stress.[27] V is the volume of the magnetic sensor. kB is the Boltzmann constant. T is the absolute temperature. Subsequently, utilizing the magnetic sensing capabilities of the 140 μm length FeGa/Ti/SCD resonator sensor, we estimate the intrinsic magnetic noise levels of the magnetic sensor to be approximately ∼630.9 pT/√Hz at 25℃ and 490.6 pT/√Hz at 300℃. This underscores the effectiveness of Eq (5) in predicting the magnetic sensing noise for the beam-structure magnetic sensors. Table 2 summarizes the dual-sensing performances of temperatures and magnetic fields of sensors with various structures. It is noted that the present MFS in our work exhibits no trade-off in sensing performance, achieving wide working temperature range, high temperature sensitivity and high magnetic sensitivity with ultrahigh reliability. Table 2 Comparison of dual-sensing performances of temperatures and magnetic fields of various structures Materials Structure Temperature sensitivity Temperature range Magnetic sensitivity Field range Mode Refs NV in diamond Quantum sensor 25 μ°C /Hz1/2 70 pT/Hz1/2 Multiplex [12] NV in diamond Quantum sensor 430 μ°C/Hz1/2 ~ -272.15 to -263.15°C 1.4 nT/Hz1/2 Multiplex [67] Si/C-V in SiC Quantum sensor -1.1 MHz/°C -263.15 to 46.85°C 10 μT/Hz1/2 Multiplex [15] Magnetic fluid/quartz Fiber sensor 8.1 pm/°C 28.6 to 57.2°C 17.835 nm/mT 0.24 to 0.8 mT Dual mode [14] Magnetic fluid/quartz Fiber sensor 17.8 pm/℃ 20 to 60 ℃ 86.43 pm/mT 0-12 mT Dual mode [68] Magnetic fluid/temperature material/quartz Fiber sensor 1.4107 nm/°C 20 to 80 ℃ 33.125 nm/mT 0.16 to 2.4 mT Dual mode [69] Magnetic fluid/polydimethylsiloxane/quartz Fiber sensor -2 nm/°C 20 to 40°C 29.375 nm/ mT 0.4 to 1.04 mT Dual mode [70] Polydimethylsiloxane/Fe3O4/SiO2 Optical sensor 5.218 nm/°C 0 to 55°C 269.1 nm/mT 0 to 4.8 mT Dual mode [71] GaN Hall sensor 286.4 ppm/℃ 25 to 400℃ 128.6 V/(AT) 0-1 T Dual mode [72] Co40Fe40B20/SiO2/ZnO/quartz SAW sensor -37.9 ppm/℃ 25 to 60°C −621.6 kHz/(m∙T) -100 to 100 mT Dual mode [9] FeGa/WC/Ti/diamond Resonator sensor -30.5 ppm/℃ 25 to 300°C 9.81 Hz/mT 0 to 10 mT Dual mode This work2.5 Dual-sensing of temperatures and magnetic fields via multifunctional resonator sensorsFigure 5. Measurements of temperatures and magnetic fields by the SCD-based MFS. a) Algorithms of MFS for outputting magnetic fields and temperatures under various conditions. b) Condition 1 at 25℃ and without magnetic field as the reference. c) Condition 2 at 25℃ and with the magnetic field of H1. d) Condition 3 at the temperature of T1 and without magnetic field. e) Condition 4 at the temperature of T2 and with the magnetic field of H2.We propose the MFS consisting of WC/Ti/SCD and FeGa/Ti/SCD resonators for real-time temperature monitoring and magnetic sensing, respectively. The SCD MEMS resonators offer thermally stable platform to fabricate the MFS architecture with simple algorithms. The temperature monitored by the WC/Ti/SCD resonator sensor is validated and adjusted based on the thermal response of the diamond resonator. The resonance frequencies of the diamond MEMS-MFS at the temperature of 25℃ and without external magnetic fields are used as the baseline for the measurements. As stated in Figure 1a, the present MFS can be employed in various conditions. By using the database of the temperature and magnetic sensitivities of the diamond MEMS-MFS, the temperature and magnetic field in a certain condition can be outputted by using the algorithms in Figure 5a. The temperature is determined by Sensor I (temperature sensor), which follows the expression, (6)Based on the temperature sensing performance of the WC/Ti/SCD resonator sensor, the region I indicates the ∆fT’ lower than 380.4 Hz. In the region I, α1=4.55×10-1, α2=25℃. The region II demonstrates the ∆fT’ larger than 380.4 Hz. In the region II, β1=3.60×10-1, β2=63.17℃. In addition, the measured temperature is further verified by the thermal response of the pure diamond resonator on the same chip. Simultaneously, Sensor II (magnetic sensor) is also affected by the environment temperature. Thus, the ∆fH, T is used to describe the overall resonance frequency shift due to the temperature and magnetic field variations. Since the thermal effect is independent of the magnetic field, the ∆fH, T is defined as ∆fT’’+∆fH. The ∆fT’’ refers to the resonance frequency shift due to the temperature variations. Calibrated by the database of Sensor I at a certain temperature, the thermal effect induced ∆fT’’ of Sensor II can be determined (Supporting Information). Therefore, the magnetic field induced resonance frequency shift can be determined by the by the following law, (7)For the present magnetic sensor based on the FeGa/Ti/SCD resonator sensor, γ1=9.67×10-3, γ2=6.88 mT, which are determined by the resonator dimensions. Through using the present MFS, the demonstration measurements of temperature, magnetic field, and dual-parameters are performed under different conditions. Figure 5b-e shows the measurement results of temperatures and magnetic fields for various conditions by utilizing the present MFS. In Figure 5b, the ∆fT’ and ∆fH are equal to 0 Hz, which indicate the the temperature of 25℃ and magnetic field of 0 mT in this condition. In Figure 5c, the ∆fT’ is equal to 0 Hz, which means the temperature is 25℃ and the ∆fT’’ is 0 Hz. Thus, the only Senor II has a frequency shift of ∆fH is 9.22 Hz, implying the existence of a magnetic field. Using Eq. (7), the magnetic field of H1 is assessed to be 1.29 mT. This value is close to that (1.27 mT) of measured by a commercial Gauss meter (EM/C-GM 301). In addition, the ∆fT’ and ∆fH have different values in Figure 5d. Based on Eq. (6), the temperature T1 can be obtained as a value of 116.39℃, close to that (120℃) of measured by a thermal couple. At this temperature, the calculated ∆fT’’ is equal to the ∆fH, T, which indicates the ∆fH is equal to 0 Hz and there is no magnetic field in this condition. In Figure 5e, the temperature T2 is assessed to be 263.39℃. The ∆fH can achieve 42.10 Hz, which manifests the magnetic field of H2 is 4.56 mT via Eq. (7). These values are close to those of measured by thermal couple and Gauss meter, respectively (270℃ and 4.73 mT). For these various conditions, the relative errors of temperature and magnetic field of the MFS are lower than 3.6%. Alternatively, the realization of accurately measure temperatures and magnetic fields for other two conditions via employing the MFS are exhibited in Figure S13. This assessment technique of the MFS offers a facile, efficient, and ultra-reliable approach for simultaneously evaluating magnetic fields and temperature for various condition.3 ConclusionIn summary, our groundbreaking work demonstrated the MFS with simple algorithms, uniquely capable of simultaneously detecting temperature and magnetic fields with high reliability under harsh environments. The diamond MEMS MFS showcases effectiveness and robustness across a broad working temperature up to 300℃. Through the functionalization of various materials on diamond MEMS resonators, the temperature and magnetic field were measured independently. The diamond MEMS MFS not only simplifies the hardware for sensing measurements, but also the software for data processing. Diamond MEMS stands out for its high reliability and wide operational temperature range, and simultaneous sensing performance, highlighting its potential for future multi-sensing applications of high integration, multifunctionality, and miniaturization.4. Experimental section4.1 Fabrication of diamond microresonators with high Q factorIn this work, the smart-cut technique was employed to produce the diamond resonators [26, 40]. The process involved the growth of diamond epilayer on high-pressure high-temperature (HPHT) SCD substrates. Prior to diamond growth, the HPHT SCD substrates were undergone a thorough cleaning process involving boiling mixtures of acids (H2SO4+HNO3), acetone, ethanol, and deionized water. Subsequently, the carbon ions at an energy of 180 keV and a dose of 1016 cm−2 was utilized to implanted into the as-cleaned SCD substrates. Diamond epilayers were then grown on these as- implanted SCD substrates using a microwave chemical vapor deposition (MPCVD) system, with specific growth parameters: 0.5% methane concentration, 500 sccm hydrogen flow, 1000 W microwave power, 840°C working temperature, and a growth duration of 3 hours. During the diamond growth, an around 200 nm-thick graphite-like layer resulting from the ion implantation treatment was formed beneath the diamond surface. This layer acted as a sacrificial layer to release resonator structure. The graphite-like layer was examined by using the TEM technique, as shown in our previous works.[73, 74] Then, an Al film with a thickness of 150 nm was deposited on the as-grown SCD epilayer. It acted as a metal mask to pattern on the SCD epilayer through a laser lithography method.[33] The reactive ion etching by inductively couple plasma (ICP) apparatus in a pure oxygen ambient was used to dry etching of as-patterned SCD and a boiling mixture acid-solution (H2SO4+HNO3) was employed to remove the metal mask and release the resonator structure. After this fabrication process, the SCD samples were annealed at 1100°C for 3 hours under ultrahigh vacuum conditions (<10-7 Pa) to reduce material defects resulting from the ion implantation treatment, thereby enhancing Q factors of SCD resonators. Due to the existence of non-diamond layer produced from the implantation treatment, the Q factors of SCD resonators was limited. The utilization of oxygen etching presented a promising approach for effectively eliminating surface layers (such as the defective-diamond layer and the diamond layer) and other imperfections[39]. These imperfections significantly impacted the Q factors of the SCD resonators. After the fabrication process, the as-fabricated SCD resonators were annealed at 650°C for 10 hours in a tube furnace in an oxygen ambient to improve Q factors.4.2 Fabrication of diamond-based multifunctional sensors After the annealed treatment, the FeGa film, WC film, and Ti film were deposited on SCD resonators by a radio frequency magnetron sputtering system, respectively. The growth process of FeGa film, Ti film, and WC film kept the following parameters: an Ar flow of 10 sccm, a working pressure of 1 Pa, a sputtering power of 100 W, and room temperature. We first pasted a tin foil on a part of SCD sample to act as a mask to deposit FeGa film (90 nm thickness) and Ti film (10 nm) on SCD resonators in the uncovered part. Then, we removed the used tin foil and pasted a new thin foil on the part with the deposition of FeGa/Ti films. The WC film (10 nm) and Ti film (90 nm) were deposited on SCD resonators in the new uncovered part. The whole fabrication process was described in Figure S1. The FeGa/Ti/diamond resonator architecture was utilized for magnetic sensing, while the temperature sensor utilized a WC/Ti/diamond resonator. In the FeGa/Ti/diamond structure, the Ti interlayer was used to enhance the adhesion. In the WC/Ti/diamond structure, the WC film served as a protective layer, preventing oxidation of the multilayer at elevated temperatures.4.3 Materials characterization and readout of resonance signalsWe utilized a Scanning Probe Microscopy (SPM, HITACHI) to investigate the surface morphologies of both thin films and diamond. Additionally, we examined the 3D profile of SCD resonators by using 3D laser optical microscopy (VK-9710). The hysteresis loops of films were measured through a vibrating sample magnetometer (Lakeshore 7440, USA). The phase structures of films were investigated by the X-ray diffraction (XRD, Cu Ka radiation) systems. The spectrometer was equipped with a 1800 Lmm-1 monochromator grating and a cooled charge-coupled device detector. An optical system based on Doppler effect of a focused laser (He-Ne laser, 633 nm, <1mW) incident vertically on the substrate was utilized to measure the out-of-plane resonance performances of SCD resonators without and with the deposition of multilayer. The lock-in amplifier system was used to read out the resonance signal. All measurements were conducted in a vacuum chamber with a pressure below 10-3 Pa. The resonators were actuated by utilizing a micro-probe connected to an RF range signal. The magnetic fields, resulted from different magnets, perpendicular to the resonator in the same plane were applied for magnetic sensing measurements. To control the temperature within a range from room temperature to high temperatures, a heater located beneath the temperature sensor was employed. This entire measurement was performed within a vacuum chamber with a pressure maintained below 10-3 Pa.Supporting InformationSupporting Information is available from the Wiley Online Library or from the author.AcknowledgmentsThis work was supported by a Grant-in-Aid of JSPS KAKENHI (no. 20H02212, 22K18957, 15H03999), JSPS Research Fellows (no. 22F21341 and 22KF0382), and Bilateral joint research between JSPS (JPJSBP120227203) and CAS. Tsukuba Global Innovation Promotion Agency and Nanotechnology Platform projects sponsored by the Ministry of Education, Culture, Sports, and Technology (MEXT) of Japan.Data AvailabilityAll data needed to evaluate the conclusions in the paper are present in the paper and/or the Supplementary Information. Other relevant data of this study are available from the corresponding author upon reasonable request.Conflict of Interest The authors declare no conflict of interests. Received: ((will be filled in by the editorial staff))Revised: ((will be filled in by the editorial staff))Published online: ((will be filled in by the editorial staff))References[1] S. Soloman, Sensors handbook, McGraw-Hill, Inc., 2009.[2] F. Tan, Y. Xiong, J. Yu, Y. Wang, Y. Li, Y. Wei, J. Sun, X. Xie, Q. Sun, Z. L. Wang, Nano Energy 2021, 90, 106617.[3] J. Yu, X. Yang, G. Gao, Y. Xiong, Y. Wang, J. Han, Y. Chen, H. Zhang, Q. Sun, Z. L. Wang, Sci. Adv. 2021, 7, eabd9117.[4] J. Ji, Z. Wang, F. Zhang, B. Wang, Y. Niu, X. Jiang, Z. y. Qiao, T. l. Ren, W. Zhang, S. Sang, Z. Cheng, Q. Sun, InfoMat 2023, 5, e12478.[5] B. Gleich, I. Schmale, T. Nielsen, J. Rahmer, Science 2023, 380, 966.[6] S. Hsieh, P. Bhattacharyya, C. Zu, T. Mittiga, T. Smart, F. Machado, B. Kobrin, T. Höhn, N. Rui, M. Kamrani, Science 2019, 366, 1349.[7] J. Hanna, M. Bteich, Y. Tawk, A. H. Ramadan, B. Dia, F. A. Asadallah, A. Eid, R. Kanj, J. Costantine, A. A. Eid, Sci. Adv. 2020, 6, eaba5320.[8] N. Zavanelli, H. Kim, J. Kim, R. Herbert, M. Mahmood, Y.-S. Kim, S. Kwon, N. B. Bolus, F. B. Torstrick, C. S. Lee, Sci. adv. 2021, 7, eabl4146.[9] Y. Yang, P. Mengue, H. Mishra, C. Floer, S. Hage‐Ali, S. Petit‐Watelot, D. Lacour, M. Hehn, T. Han, O. Elmazria, Adv. Mater. Technol. 2022, 7, 2100860.[10] M. Zaeimbashi, M. Nasrollahpour, A. Khalifa, A. Romano, X. Liang, H. Chen, N. Sun, A. Matyushov, H. Lin, C. Dong, Nat. Commun. 2021, 12, 3141.[11] C. Foy, L. Zhang, M. E. Trusheim, K. R. Bagnall, M. Walsh, E. N. Wang, D. R. Englund, ACS Appl. Mater. Interfaces 2020, 12, 26525.[12] J. H. Shim, S.-J. Lee, S. Ghimire, J. I. Hwang, K.-G. Lee, K. Kim, M. J. Turner, C. A. Hart, R. L. Walsworth, S. Oh, Phys. Rev. Appl. 2022, 17, 014009.[13] J. Liu, Q. Chen, Q. Liu, B. Zhao, S. Ling, J. Yao, Z. Shao, X. Chen, Adv. Mater. Technol. 2020, 5, 2000430.[14] Y. Chen, Q. Han, W. Yan, Y. Yao, T. Liu, IEEE Sens. J. 2016, 16, 7659.[15] H. Kraus, V. Soltamov, F. Fuchs, D. Simin, A. Sperlich, P. Baranov, G. Astakhov, V. Dyakonov, Sci. Rep. 2014, 4, 5303.[16] H. García-Miquel, D. Barrera, R. Amat, G. Kurlyandskaya, S. Sales, Measurement 2016, 80, 201.[17] F. Casola, T. Van Der Sar, A. Yacoby, Nature Reviews Materials 2018, 3, 1.[18] Y.-H. Wu, M.-Y. Liu, H. Song, C. Li, X.-L. Yang, IEEE Sens. J. 2022, 22, 17799.[19] A. S. Algamili, M. H. M. Khir, J. O. Dennis, A. Y. Ahmed, S. S. Alabsi, S. S. Ba Hashwan, M. M. Junaid, Nat. Rev. Mater. 2021, 16, 1.[20] A. Banerjee, D. Bernoulli, H. Zhang, M.-F. Yuen, J. Liu, J. Dong, F. Ding, J. Lu, M. Dao, W. Zhang, Science 2018, 360, 300.[21] C. Dang, J.-P. Chou, B. Dai, C.-T. Chou, Y. Yang, R. Fan, W. Lin, F. Meng, A. Hu, J. Zhu, Science 2021, 371, 76.[22] O. Auciello, Functional Diamond 2022, 2, 1.[23] Y. Tao, J. M. Boss, B. Moores, C. L. Degen, Nat. Commun. 2014, 5, 1.[24] E. Sillero, O. A. Williams, V. Lebedev, V. Cimalla, C. Röhlig, C. Nebel, F. Calle, J. Micromech. Microeng. 2009, 19, 115016.[25] T. Ma, J. Gou, S. Hu, X. Liu, C. Wu, S. Ren, H. Zhao, A. Xiao, C. Jiang, X. Ren, Nat. Commun. 2017, 8, 13937.[26] Z. Zhang, H. Wu, L. Sang, Y. Takahashi, J. Huang, L. Wang, M. Toda, I. M. Akita, Y. Koide, S. Koizumi, ACS Appl. Mater. Interfaces 2020, 12, 23155.[27] Z. Zhang, Y. Wu, L. Sang, H. Wu, J. Huang, L. Wang, Y. Takahashi, R. Li, S. Koizumi, M. Toda, Mater. Res. Lett. 2020, 8, 180.[28] M. Liao, Y. Koide, J. Alvarez, Appl. Phys. Lett. 2005, 87.[29] X. Zou, S. Ahmed, N. Jaber, H. Fariborzi, J IEEE Sens. 2022, 22, 13921.[30] X. Li, J. Liang, H. Zhang, X. Yang, H. Zhang, W. Pang, M. Zhang, Appl. Phys. Lett. 2017, 110.[31] Z. Zhang, W. Zhao, G. Chen, M. Toda, S. Koizumi, Y. Koide, M. Liao, Adv. Funct. Mater. 2023, 2300805.[32] W. Weaver Jr, S. P. Timoshenko, D. H. Young, Vibration problems in engineering, John Wiley & Sons, 1991.[33] M. Liao, Functional Diamond 2022, 1, 29.[34] B. Jiang, S. Huang, J. Zhang, Y. Su, Micromachines 2020, 12, 26.[35] H. Sun, L. Sang, X. Shen, X. Yang, T. Li, J. You, B. Shen, M. Liao, J. Appl. Phys. 2022, 131.[36] H. Campanella, M. Narducci, S. Merugu, N. Singh, IEEE Trans. Electron Dev. 2017, 64, 3368.[37] M. Liao, S. Hishita, E. Watanabe, S. Koizumi, Y. Koide, Adv. Mater. 2010, 22, 5393.[38] P. Olivero, S. Rubanov, P. Reichart, B. C. Gibson, S. T. Huntington, J. Rabeau, A. D. Greentree, J. Salzman, D. Moore, D. N. Jamieson, Adv. Mater. 2005, 17, 2427.[39] Z. Zhang, G. Chen, K. Gu, S. Koizumi, M. Liao, Functional Diamond 2023, 3, 2221280.[40] Z. Zhang, H. Wu, L. Sang, J. Huang, Y. Takahashi, L. Wang, M. Imura, S. Koizumi, Y. Koide, M. Liao, Carbon 2019, 152, 788.[41] Z. Zhang, L. Sang, J. Huang, L. Wang, Y. Koide, S. Koizumi, M. Liao, Carbon 2022, 200, 401.[42] A. N. Cleland, New J. Phys. 2005, 7, 235.[43] K. Y. Yasumura, T. D. Stowe, E. M. Chow, T. Pfafman, T. W. Kenny, B. C. Stipe, D. Rugar, J. Microelectromech. Syst. 2000, 9, 117.[44] Y. Tao, J. M. Boss, B. Moores, C. L. Degen, Nat. Commun. 2014, 5, 3638.[45] J. Xu, K. Lu, D. Fan, Y. Wang, S. Xu, M. Kubo, J. Phys. Chem. C 2021, 125, 16711.[46] A. Tallaire, T. Ouisse, A. Lantreibecq, R. Cours, M. Legros, H. Bensalah, J. Barjon, V. Mille, O. Brinza, J. Achard, Cryst. Growth Des. 2016, 16, 2741.[47] N. Tsubouchi, Y. Mokuno, S. Shikata, Diam. Relat. Mater. 2016, 63, 43.[48] H. Wu, L. Sang, Y. Li, T. Teraji, T. Li, M. Imura, J. You, Y. Koide, M. Toda, M. Liao, Phys. Rev. Mater. 2018, 2, 090601.[49] J. Wachtman Jr, W. Tefft, D. Lam Jr, C. Apstein, Phys. Rev. 1961, 122, 1754.[50] H. Sun, L. Sang, H. Wu, Z. Zhang, T. Teraji, T.-F. Li, J. You, M. Toda, S. Koizumi, M. Liao, Phys. Rev. Lett. 2020, 125, 206802.[51] J. Montague, K. Bertness, N. Sanford, V. Bright, C. Rogers, Appl. Phys. Lett. 2012, 101.[52] X. Lu, J. Y. Lee, P. X.-L. Feng, Q. Lin, Opt. Lett. 2013, 38, 1304.[53] X.-Q. Zheng, P. X.-L. Feng, presented at 2021 IEEE 34th International Conference on Micro Electro Mechanical Systems (MEMS) 2021.[54] J. Yang, M. Zhang, Y. He, Y. Su, G. Han, C. Si, J. Ning, F. Yang, X. Wang, Micromachines 2019, 10, 589.[55] W.-H. Chuang, T. Luger, R. K. Fettig, R. Ghodssi, J. Microelectromech. Syst. 2004, 13, 870.[56] J. Soderkvist, K. Hjort, J. Micromech. Microeng. 1994, 4, 28.[57] P. Jacobson, S. Stoupin, Diam. Relat. Mater. 2019, 97, 107469.[58] W. Fang, C.-Y. Lo, Sens. Actuator A Phys 2000, 84, 310.[59] A. Lahav, K. A. Grim, I. A. Blech, J. Appl. Phys. 1990, 67, 734.[60] H. Klaasen, J. Kübarsepp, Wear 2006, 261, 520.[61] H. Okeil, G. Wachutka, IEEE Trans. Magn. 2018, 55, 1.[62] M. Hecker, D. Tietjen, C. Schneider, N. Cramer, L. Malkinski, R. Camley, Z. Celinski, J. Appl. Phys. 2002, 91, 7203.[63] C. B. Ene, G. Schmitz, R. Kirchheim, A. Hütten, Acta Mater. 2005, 53, 3383.[64] T. Nan, Y. Hui, M. Rinaldi, N. X. Sun, Scientific reports 2013, 3, 1985.[65] S. Bennett, J. Baldwin, M. Staruch, B. Matis, J. LaComb, O. van't Erve, K. Bussmann, M. Metzler, N. Gottron, W. Zappone, Appl. Phys. Lett. 2017, 111.[66] J. Kiser, R. Lacomb, K. Bussmann, C. J. Hawley, J. E. Spanier, X. Zhuang, C. Dolabdjian, S. Lofland, P. Finkel, Appl. Phys. Lett. 2014, 104.[67] A. M. Wojciechowski, M. Karadas, C. Osterkamp, S. Jankuhn, J. Meijer, F. Jelezko, A. Huck, U. L. Andersen, Appl. Phys. Lett. 2018, 113.[68] Y. Huang, H. Qiu, C. Deng, Z. Lian, Y. Yang, Y. Yu, C. Hu, Y. Dong, Y. Shang, X. Zhang, Opt. Express 2021, 29, 32208.[69] S. Gu, W. Sun, M. Li, Z. Li, X. Nan, Z. Feng, M. Deng, Optik 2022, 259, 169030.[70] W. Zhou, X. Qin, M. Lv, L. Qiu, Z. Chen, F. Zhang, Micromachines 2023, 14, 1684.[71] S. Simitha, D. Mohan, S. M. Francis, A. Ramachandran, J. Jacob, V. I. Thomas, Phys. Chem. Chem. Phys. 2023, 25, 21981.[72] H. Huang, H. Zhang, Y. Cao, Y. Liu, K. Ma, K. Liu, Y. C. Liang, J. Phys. D: Appl. Phys. 2020, 54, 075003.[73] M. Liao, Y. Koide, L. Sang, in Novel Aspects of Diamond: From Growth to Applications, DOI: 10.1007/978-3-030-12469-4_4 (Ed: N. Yang), Springer International Publishing, Cham 2019, p. 91.[74] M. Liao, M. Toda, L. Sang, S. Hishita, S. Tanaka, Y. Koide, Appl. Phys. Lett. 2014, 105, 251904.8image2.emfcdefa b GHTHP-SCDSCD~LPFLock-inωimage3.emfb cefa dimage4.pngimage5.pngimage1.tiffimage6.jpeg