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[[vol.90]From Bottleneck to Breakthrough_ MANA Achieves New Computing Paradigm with Reconfigurable Logic Circuits_ MANA.pdf](https://mdr.nims.go.jp/filesets/011abf28-6260-4c3f-9ee2-91a0db41c367/download)

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International Center for Materials Nanoarchitectonics (WPI-MANA)

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[[Research Highlights Vol. 90]From Bottleneck to Breakthrough: MANA Achieves New Computing Paradigm with Reconfigurable Logic Circuits](https://mdr.nims.go.jp/datasets/1f539f17-f163-4ee0-929f-e67ab601a461)

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From Bottleneck to Breakthrough: MANA Achieves New Computing Paradigm with Reconfigurable Logic Circuits| MANAPrevious Index NextResearch Highlights[Vol. 90]From Bottleneck to Breakthrough: MANA Achieves New Computing Paradigm withReconfigurable Logic Circuits22 Aug, 2024Scientists from the Research Center for Materials Nanoarchitectonics (MANA) developed areconfigurable logic circuit that switches functions with constant input voltages. This innovationopens doors to novel computing architectures.Most computers today are based on the von Neumann architecture, where memory and processing arehandled separately. The transfer of data between these two units causes a bottleneck, slowing downoperations. In-memory computing aims to fix this issue by integrating logic directly into memory forfaster and more power-efficient processing.In a recent breakthrough, researchers from the Quantum Device Engineering Group at MANA, includinggroup leader Yutaka Wakayama and Yoshitaka Shingaya, along with Junko Aimi from the ResearchCenter for Macromolecules and Biomaterials, NIMS, developed electrically reconfigurable two-input logiccircuits that can switch between different logic functions. These circuits also function as artificialsynapses, which are crucial for advancing neuromorphic computing systems.The circuit is based on a dual-gate antiambipolar transistor (AAT), constructed by stacking an n-typesemiconductor and a p-type one. The AAT has a unique Λ-shaped response curve where the outputcurrent changes with the input gate voltages. By manipulating these gate voltages, specific currentvalues corresponding to logic states “0” and “1” are produced. This allows the AAT to perform variouslogic functions depending on the chosen combination of gate voltages.To maintain consistent input voltages while adjusting logic states, a zinc phthalocyanine core (ZnPc) isintegrated into the AAT. ZnPc traps carrier charges, shifting the peak voltage position associated withResearchQuantum Materials FieldNanomaterials FieldResearch SupportResearch HighlightsHot TopicsHome  > Research  > Research Highlights  > Vol. 90 From Bottleneck to Breakthroug･･･About MANA Research People News Room Outreach Employment AlumniSite Map Contact Us Access to MANA Website System Requirements   Text size  Standard Large  Japanese Pagehttps://www.nims.go.jp/mana/research/highlights/vol89.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/highlights/vol91.htmlhttps://www.nims.go.jp/mana/research/index.htmlhttps://www.nims.go.jp/mana/research/quantum_material.htmlhttps://www.nims.go.jp/mana/research/nano_material.htmlhttps://www.nims.go.jp/mana/research/researcher_support.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttps://www.nims.go.jp/mana/research/hottopics/index.htmlhttps://www.nims.go.jp/mana/jp/index.htmlhttps://www.nims.go.jp/mana/research/index.htmlhttps://www.nims.go.jp/mana/research/highlights/index.htmlhttp://www.jsps.go.jp/english/e-toplevel/http://www.jsps.go.jp/english/e-toplevel/https://www.nims.go.jp/mana/index.htmlhttps://www.nims.go.jp/mana/index.htmlhttps://www.nims.go.jp/mana/about/index.htmlhttps://www.nims.go.jp/mana/research/index.htmlhttps://www.nims.go.jp/mana/member/index.htmlhttps://www.nims.go.jp/mana/news_room/2024.htmlhttps://www.nims.go.jp/mana/pror/index.htmlhttps://www.nims.go.jp/mana/recruit/index.htmlhttps://www.nims.go.jp/mana/alumni/index.htmlhttps://www.nims.go.jp/mana/siteinfo/sitemap.htmlhttps://www.nims.go.jp/mana/siteinfo/inquiry.htmlhttps://www.nims.go.jp/mana/siteinfo/access.htmlhttps://www.nims.go.jp/mana/siteinfo/accessibility.htmlhttps://www.nims.go.jp/mana/jp/research/highlights/vol90.htmldifferent logic functions. This enables the AAT to switch between logic states, such as from AND to ORand from NAND to NOR, under constant input voltages.The device also functions like an artificial synapse. Adjusting the readout voltage modifies its synapticresponse or current, similar to how brain synapses strengthen or weaken signals. As Dr. Wakayamahighlights, “We have developed a non-von Neumann type device architecture by integrating thenonvolatile memory function with the dual-gate AAT, which is not achievable in conventional CMOSarchitectures.”ReferenceJournal ACS Applied Materials & InterfacesTitle Multifunctional In-Memory Logics Based on a Dual-Gate Antiambipolar Transistor toward Non-vonNeumann Computing ArchitectureAuthors Yoshitaka Shingaya, Takuya Iwasaki, Ryoma Hayakawa, Shu Nakahara, Kenji Watanabe , TakashiTaniguchi, Junko Aimi, Yutaka WakayamaAffiliations Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science (NIMS),Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanResearch Center for Electronic and Optical Materials, National Institute for Materials Science (NIMS),Namiki 1-1, Tsukuba, Ibaraki 305-0044, JapanResearch Center for Macromolecules and Biomaterials,1-2-1 Sengen, Tsukuba, Ibaraki, 305-0047 JAPANDOI 10.1021/acsami.4c06116Contact informationResearch Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science1-1 Namiki, Tsukuba, Ibaraki 305-0044 JapanPhone: +81-29-860-4710E-mail: mana-pr[AT]nims.go.jpTo receive our e-mail newsletter “MANA Research Highlights”, please send an e-mail with "MANA ResearchHighlights request” in the subject line or main text to the following address: mana-pr_at_nims.go.jp *Pleasechange "_at_ " in the email address to @.Research Center for Materials Nanoarchitectonics (MANA)National Institute for Materials Science (NIMS)1-1 Namiki Tsukuba, Ibaraki 305-0044 JAPAN+81-29-860-4709E-mail: mana[AT]nims.go.jpCopyright © National Institute for Materials Science. 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