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647 records found.
Dual-Gate Anti-Ambipolar Transistor with Van der Waals ReS2/WSe2 Heterojunction for Reconfigurable Logic Operations
- Journal article
- Creator
-
Yoshitaka Shingaya (author) (Search by this author)National Institute for Materials Science
;
Amir Zulkefli (author) (Search by this author)
https://orcid.org/0000-0001-7013-9962
(unauthenticated)
National Institute for Materials Science
;
Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
Ryoma Hayakawa (author) (Search by this author)National Institute for Materials Science
;
Shu Nakaharai (author) (Search by this author)
https://orcid.org/0000-0002-6329-3942
(unauthenticated)
National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Yutaka Wakayama (author) (Search by this author)National Institute for Materials Science
- Keyword
- 2D materials, antiambipolar transistors, reconfigurable logic circuits, ReS2, WSe2
- Date published
- 2022-09-25
- Updated at
- 2024-09-18 12:30:12 +0900
Self-aligned gate electrode for hydrogen-terminated diamond field-effect transistors with a hexagonal boron nitride gate insulator
- Journal article
- Creator
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Yosuke Sasama (author) (Search by this author)
;
Takuya Iwasaki (author) (Search by this author)
;
Mohammad Monish (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Yamaguchi Takahide (author) (Search by this author)
- Keyword
- Hydrogen-terminated diamond, Field-effect transistors, hexagonal boron nitride, Self-aligned gate electrode
- Date published
- 2024-08-26
- Updated at
- 2024-09-12 16:30:45 +0900
Multifunctional in-memory logics based on a dual-gate antiambipolar transistor toward non-von Neumann computing architecture
- Journal article
- Creator
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Yoshitaka Shingaya (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Neuromorphic Devices Group, National Institute for Materials Science
;
Takuya Iwasaki (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Qubit Materials Group, National Institute for Materials Science
;
Ryoma Hayakawa (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Quantum Device Engineering Group, National Institute for Materials Science
;
;Shu Nakaharai (author) (Search by this author)International Center for Materials Nanoarchitectonics/Nano-System Field/Quantum Device Engineering Group, National Institute for Materials ScienceKenji Watanabe (author) (Search by this author)Research Center for Electronic and Optical Materials/Optical Materials Field/Semiconductor Defect Design Group, National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
;
Junko Aimi (author) (Search by this author)Research Center for Macromolecules and Biomaterials/Macromolecules Field/Molecular Mechatronics Group, National Institute for Materials Science
;
Yutaka Wakayama (author) (Search by this author)Research Center for Materials Nanoarchitectonics (MANA)/Quantum Materials Field/Quantum Device Engineering Group, National Institute for Materials Science
- Keyword
- 2D materials, antiambipolar transistor, in-memory logic, neuromorphic device, nano-floating gate, non-von Neumann computing
- Date published
- 2024-07-03
- Updated at
- 2025-06-24 08:30:41 +0900
Magnetotransport properties in van der Waals
- Journal article
- Creator
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Tomo Higashihara (author) (Search by this author)
https://orcid.org/0009-0007-6718-6566
(unauthenticated)
;
;Ryotaro Asama (author) (Search by this author);Ryoya Nakamura (author) (Search by this author)Mori Watanabe (author) (Search by this author)
https://orcid.org/0000-0003-0664-6323
(unauthenticated)
;
Nanami Tomoda (author) (Search by this author)
https://orcid.org/0000-0003-4273-7644
(unauthenticated)
;
Thomas Johannes Hasiweder (author) (Search by this author)
https://orcid.org/0000-0002-8421-1897
(unauthenticated)
;
Yuita Fujisawa (author) (Search by this author)
https://orcid.org/0000-0002-5436-0883
(unauthenticated)
;
;Yoshinori Okada (author) (Search by this author)Takuya Iwasaki (author) (Search by this author)
;
Kenji Watanabe (author) (Search by this author)
;
Takashi Taniguchi (author) (Search by this author)
;
Nan Jiang (author) (Search by this author)
https://orcid.org/0000-0002-5489-7410
(unauthenticated)
;
Yasuhiro Niimi (author) (Search by this author)
https://orcid.org/0000-0003-1659-0634
(unauthenticated)
- Keyword
- Antiferromagnetism, Charge density waves, Hall effect, Magnetoresistance, Shubnikov-de Haas effect, Magnetic thin films, Rare-earth magnetic materials
- Date published
- 2024-04-02
- Updated at
- 2024-04-19 12:30:19 +0900
Photo-thermoelectric effect-driven detection of optical communication light in graphene/hBN heterostructures
- Journal article
- Creator
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Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
;Yodai Sato (author) (Search by this author);Makoto Ogo (author) (Search by this author);Byunghun Oh (author) (Search by this author)Daichi Kozawa (author) (Search by this author)National Institute for Materials Science
;
Ryo Kitaura (author) (Search by this author)National Institute for Materials Science
;
Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Satoshi Moriyama (author) (Search by this author)
https://orcid.org/0000-0001-6599-6433
(unauthenticated)
National Institute for Materials Science
;
Junichi Fujikata (author) (Search by this author)
- Keyword
- graphene/hBN heterostructure, photodetector, photo-thermoelectric effect
- Date published
- 2024-03-01
- Updated at
- 2025-03-06 12:30:21 +0900
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
- Journal article
- Creator
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Takuya Iwasaki (author) (Search by this author)National Institute for Materials Science
;
;Yoshifumi Morita (author) (Search by this author)Kenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
- Keyword
- bilayer graphene, hexagonal boron nitride, heterostructure, valley Hall effect
- Date published
- 2024-02-08
- Updated at
- 2025-01-10 16:31:45 +0900
Gate-modulated reflectance spectroscopy for detecting excitonic states in two-dimensional semiconductors
- Journal article
- Creator
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;Mengsong Xue (author) (Search by this author)National Institute for Materials ScienceKenji Watanabe (author) (Search by this author)National Institute for Materials Science
;
Takashi Taniguchi (author) (Search by this author)National Institute for Materials Science
;
Ryo Kitaura (author) (Search by this author)National Institute for Materials Science
- Keyword
- excitons, 2D materials, modulation spectroscopy
- Date published
- 2023-08-07
- Updated at
- 2024-01-12 13:22:21 +0900