水素終端リンドープダイヤモンド表面電気伝導を利用した pチャネル電界効果トランジスタ
- Journal article
- Creator
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廖 梅勇 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構
;
;趙 文 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構小泉 聡 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構
- Keyword
- diamond, transistor
- Date published
- 2025-04-25
- Updated at
- 2025-08-18 12:30:23 +0900
Diamond CMOS technology
- Conference presentation
- Creator
-
Meiyong Liao (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
;Wen Zhao (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials ScienceSatoshi Koizumi (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
- Keyword
- Diamond, n-type, transistor
- Date published
- Updated at
- 2025-05-22 08:30:34 +0900
P-Channel MOSFETs on Phosphorous-Doped n-Type Diamond
- Journal article
- Creator
-
Wen Zhao (author) (Search by this author)
https://orcid.org/0000-0001-8159-8195
(unauthenticated)
National Institute for Materials Science
;
Satoshi Koizumi (author) (Search by this author)National Institute for Materials Science
;
Meiyong Liao (author) (Search by this author)National Institute for Materials Science
- Keyword
- Diamond, n-type, transistor
- Date published
- 2024-10-24
- Updated at
- 2024-12-05 12:47:42 +0900