水素終端リンドープダイヤモンド表面電気伝導を利用した pチャネル電界効果トランジスタ
- Journal article
- Creator
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廖 梅勇 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構
;
;趙 文 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構小泉 聡 (author) (Search by this author)電子・光機能材料研究センター/機能材料分野/超ワイドギャップ半導体グループ, 物質・材料研究機構
- Keyword
- diamond, transistor
- Date published
- 2025-04-25
- Updated at
- 2025-08-18 12:30:23 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
- Journal article
- Creator
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Kongping Wu (author) (Search by this author)
https://orcid.org/0000-0001-5672-7610
(unauthenticated)
;
;Renxiang Cheng (author) (Search by this author);Leng Zhang (author) (Search by this author);Wenxiu Wang (author) (Search by this author);Fangzhen Li (author) (Search by this author)Meiyong Liao (author) (Search by this author)
- Keyword
- diamond, heat spreader, GaN, calculation
- Date published
- 2024-12-19
- Updated at
- 2025-04-22 08:30:20 +0900