- Crystallographic defects (1)
- Electrical properties and parameters (1)
- Electronic bandstructure (1)
- First-principle calculations (1)
- Random access memory (1)
- Resistive switching (1)
- Thermally stimulated current spectroscopy (1)
- Transmission electron microscope (1)
- electron energy loss spectroscopy (1)
- semiconductor structures (1)
Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory
- ジャーナル論文
- 著者
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;Kubota, Masato (author) (この著者で検索);Nigo, Seisuke (author) (この著者で検索)Kitazawa, Hideaki (author) (この著者で検索)
;
Harada, Yoshitomo (author) (この著者で検索)
;
;Kido, Giyuu (author) (この著者で検索);Hirayama, Taisei (author) (この著者で検索)Kato, Seiichi (author) (この著者で検索)
- キーワード
- Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope
- 刊行年月日
- 2012-08-01
- 更新時刻
- 2024-01-05 22:12:58 +0900