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Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review
- ジャーナル論文
- 著者
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;Tianzhuo Zhan (author) (この著者で検索);Mao Xu (author) (この著者で検索);Zhi Cao (author) (この著者で検索);Chong Zheng (author) (この著者で検索);Hiroki Kurita (author) (この著者で検索);Fumio Narita (author) (この著者で検索)Yen-Ju Wu (author) (この著者で検索)National Institute for Materials Science
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Yibin Xu (author) (この著者で検索)National Institute for Materials Science
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;Haidong Wang (author) (この著者で検索);Mengjie Song (author) (この著者で検索);Wei Wang (author) (この著者で検索);Yanguang Zhou (author) (この著者で検索);Xuqing Liu (author) (この著者で検索);Yu Shi (author) (この著者で検索);Yu Jia (author) (この著者で検索);Sujun Guan (author) (この著者で検索);Tatsuro Hanajiri (author) (この著者で検索);Toru Maekawa (author) (この著者で検索);Akitoshi Okino (author) (この著者で検索)Takanobu Watanabe (author) (この著者で検索) - キーワード
- thermal boundary resistance, Gallium Nitride, semiconductor, high-electron-mobility transistors
- 刊行年月日
- 2023-11-08
- 更新時刻
- 2024-01-05 22:11:33 +0900