Interface engineering of HfO ₂ -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO ₂ nucleation layers

ジャーナル論文

著者

Takashi Onaya (author) (この著者で検索)

https://orcid.org/0000-0002-2710-8623 (unauthenticated)

National Institute for Materials Science

Takashi Onaya ;

Toshihide Nabatame (author) (この著者で検索)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Toshihide Nabatame

キーワード

atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control

刊行年月日

2026-04-30

更新時刻

2026-07-13 17:01:06 +0900