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ジャーナル論文(2)
キーワード
interface engineering (2)
BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe) (1)
atomic layer deposition (1)
crystal phase control (1)
ferroelectric HfO2-based thin films (1)
memory devices (1)
topological heterostructures (1)
(more)
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キーワード: interface engineering
全ての絞り込みを解除
2 件のレコードが見つかりました。
Enhanced spin–orbit torque efficiency via interface engineering in BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe) topological heterostructures
ジャーナル論文
著者
Rohiteswar Mondal
(author) (
この著者で検索
)
Rohiteswar Mondal
;
Zhenchao Wen
(author) (
この著者で検索
)
https://orcid.org/0000-0001-7496-1339
NIMS Researchers Directory SAMURAI
Zhenchao Wen
;
Chandrasekhar Murapaka
(author) (
この著者で検索
)
https://orcid.org/0000-0002-0283-7037
(unauthenticated)
Chandrasekhar Murapaka
;
Seiji Mitani
(author) (
この著者で検索
)
https://orcid.org/0000-0002-1348-0774
NIMS Researchers Directory SAMURAI
Seiji Mitani
;
Hiroaki Sukegawa
(author) (
この著者で検索
)
https://orcid.org/0000-0002-4034-7848
NIMS Researchers Directory SAMURAI
Hiroaki Sukegawa
;
Quang Le
(author) (
この著者で検索
)
https://orcid.org/0000-0002-4991-5290
(unauthenticated)
Quang Le
;
Xiaoyong Liu
(author) (
この著者で検索
)
https://orcid.org/0000-0002-2661-8197
(unauthenticated)
Xiaoyong Liu
;
Brian York
(author) (
この著者で検索
)
Brian York
;
Maki Maeda
(author) (
この著者で検索
)
https://orcid.org/0009-0002-2808-0498
(unauthenticated)
Maki Maeda
キーワード
interface engineering
,
topological heterostructures
,
BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe)
刊行年月日
2026-05-14
更新時刻
2026-05-12 09:47:48 +0900
Interface engineering of HfO
2
-based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO
2
nucleation layers
ジャーナル論文
著者
Takashi Onaya
(author) (
この著者で検索
)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
Takashi Onaya
;
Toshihide Nabatame
(author) (
この著者で検索
)
https://orcid.org/0000-0002-5973-0230
National Institute for Materials Science
NIMS Researchers Directory SAMURAI
Toshihide Nabatame
キーワード
atomic layer deposition
,
ferroelectric HfO2-based thin films
,
memory devices
,
interface engineering
,
crystal phase control
刊行年月日
2026-04-30
更新時刻
2026-07-13 17:01:06 +0900
キーワード
interface engineering
(2)
BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe)
(1)
atomic layer deposition
(1)
crystal phase control
(1)
ferroelectric HfO2-based thin films
(1)
memory devices
(1)
topological heterostructures
(1)
RDEメタデータ定義
RDE送り状
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