8 records found. Displaying records 1 to 8.
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
- Journal article
- Creator
-
;Qihao Zhang (author) (Search by this author)Jiangwei Liu (author) (Search by this author)National Institute for Materials Science
;
;Chunming Tu (author) (Search by this author);Dongyuan Zhai (author) (Search by this author);Min He (author) (Search by this author)Jiwu Lu (author) (Search by this author) - Keyword
- Ga2O3, Transistor
- Date published
- 2023-01-03
- Updated at
- 2025-01-04 16:30:50 +0900
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH, wet etching, MEMS
- Date published
- 2025-11-01
- Updated at
- 2025-11-27 08:30:13 +0900
(110)- and (−134)-faceted surface morphology of halide vapor phase epitaxy-grown β- Ga 2 O 3 homoepitaxial layers on (011) substrates
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, (011), AFM, TEM
- Date published
- 2026-07-15
- Updated at
- 2026-07-09 10:29:39 +0900
Near-vertical plasma-free HCl gas etching on (011) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
;
Yuichi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, crystallographic etching, (011)
- Date published
- 2025-01-01
- Updated at
- 2026-01-24 15:43:35 +0900
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
- Keyword
- Ga2O3, (-102), selective area growth, selective area etching
- Date published
- 2024-01-22
- Updated at
- 2025-01-25 12:30:12 +0900
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, TMAH
- Date published
- 2026-02-01
- Updated at
- 2026-02-25 12:30:03 +0900
Wet etching of (−102) β-Ga 2 O 3 with tetramethylammonium hydroxide (TMAH)
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)
- Keyword
- Ga2O3, wet etching, TMAH
- Date published
- 2026-12-31
- Updated at
- 2026-06-11 15:11:01 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900