Epitaxial lateral overgrowth of m -plane α-Ga 2 O 3 by halide vapor phase epitaxy
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takashi Shinohe (author) (Search by this author)
https://orcid.org/0009-0000-5559-1432
(unauthenticated)
- Keyword
- Ga2O3, dislocation, ELO, HVPE
- Date published
- 2025-12-31
- Updated at
- 2025-04-23 12:30:12 +0900
High Schottky barrier formation in tilted-dipole PdCoO2/ β -Ga2O3 (001) interfaces
- Journal article
- Creator
-
Takayuki Harada (author) (Search by this author)
;
Takuro Nagai (author) (Search by this author)
;
Kohei Sasaki (author) (Search by this author)
https://orcid.org/0000-0002-8923-7703
(unauthenticated)
- Keyword
- Thin film, Ga2O3, Delafossite, Power devices, Schottky
- Date published
- 2026-06-01
- Updated at
- 2026-06-10 14:51:59 +0900
Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
;
Takashi Shinohe (author) (Search by this author)FLOSFIA INC.
- Keyword
- Ga2O3, dislocation, HVPE, ELO
- Date published
- 2025-05-19
- Updated at
- 2025-05-21 16:30:09 +0900
Plasma-free dry etching of (001) β-Ga2O3 substrates by HCl gas
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)National Institute for Materials Science
;
Yuichi Oshima (author) (Search by this author)National Institute for Materials Science
- Keyword
- Ga2O3, etching, HCl
- Date published
- 2023-04-17
- Updated at
- 2024-05-29 08:30:12 +0900
Epitaxial relationship of NiO on (-102) β-Ga2O3
- Journal article
- Creator
-
Takayoshi Oshima (author) (Search by this author)Research Center for Electronic and Optical Materials, National Institute for Materials Science
;
Shinji Nakagomi (author) (Search by this author)Faculty of Science and Engineering, Ishinomaki Senshu University
- Keyword
- Ga2O3, NiO, epitaxial relationship
- Date published
- 2023-12-01
- Updated at
- 2024-11-23 16:30:35 +0900
Halide vapor phase epitaxy of a thick c -plane α-Ga2O3 film on a high-quality α-Cr2O3/sapphire template
- Journal article
- Creator
-
Yuichi Oshima (author) (Search by this author)
;
Takayoshi Oshima (author) (Search by this author)
;
Shiyu Xiao (author) (Search by this author)
https://orcid.org/0009-0007-0382-0396
(unauthenticated)
;
;Kazuto Murakami (author) (Search by this author);Katsuhiro Imai (author) (Search by this author)Takahiro Tomita (author) (Search by this author)
- Keyword
- Ga2O3, HVPE, Cr2O3
- Date published
- 2026-02-21
- Updated at
- 2026-02-18 16:30:15 +0900