Keyword: Ga2O3
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27 records found. Displaying records 1 to 10.

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Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
055207_1_5.0260753-2-8.pdf
Fabrication of air bridges on (100) β-Ga2O3 using crystallographic HCl gas etching
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, HCl gas etching, air bridge
Date published
2025-05-01
Updated at
2025-05-07 12:30:22 +0900
Oshima_2025_Appl._Phys._Express_18_116501-1.pdf
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, TMAH, wet etching, MEMS
Date published
2025-11-01
Updated at
2025-11-27 08:30:13 +0900
042110_1_5.0186319.pdf
Using selective-area growth and selective-area etching on (−102) β-Ga2O3 substrates to fabricate plasma-damage-free vertical fins and trenches
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials, National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, (-102), selective area growth, selective area etching
Date published
2024-01-22
Updated at
2025-01-25 12:30:12 +0900
manuscript2022-11.pdf
High-performance β-Ga2O3 Schottky barrier diodes and metal-semiconductor field-effect transistors on a high doping level epitaxial layer
Journal article
Creator
Qihao Zhang (author) (Search by this author)
;
Jiangwei Liu (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Chunming Tu (author) (Search by this author)
;
Dongyuan Zhai (author) (Search by this author)
;
Min He (author) (Search by this author)
;
Jiwu Lu (author) (Search by this author)
Keyword
Ga2O3, Transistor
Date published
2023-01-03
Updated at
2025-01-04 16:30:50 +0900
Manuscript_final .docx
Selective area growth of β-Ga2O3 by HCl-based halide vapor phase epitaxy
Journal article
Creator
Takayoshi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI ;
Yuichi Oshima (author) (Search by this author)
National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, selective area growth
Date published
2022-07-01
Updated at
2024-01-05 22:13:27 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886
Dataset
Collection
MDR lattice thermal conductivity calculation database
Creator
Atsushi Togo (author) (Search by this author)
Center for Basic Research on Materials, National Institute for Materials Science
ORCID SAMURAI
Keyword
Lattice thermal conductivity, Ga2O3
Date published
Updated at
2026-01-24 14:36:41 +0900
band_pdos.png
First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243
Dataset
Collection
MDR lattice thermal conductivity calculation database
Creator
Atsushi Togo (author) (Search by this author)
Center for Basic Research on Materials, National Institute for Materials Science
ORCID SAMURAI
Keyword
Lattice thermal conductivity, Ga2O3
Date published
Updated at
2026-01-24 12:32:36 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (−112), HVPE, HCl gas etching
Date published
2026-12-31
Updated at
2026-07-16 10:12:49 +0900
Plasma-free anisotropic selective-area etching of -Ga2O3 using forming gas under atmospheric pressure_organized.pdf
Plasma-free anisotropic selective-area etching of β-Ga 2 O 3 using forming gas under atmospheric pressure
Journal article
Creator
ORCID SAMURAI ;
Rie Togashi (author) (Search by this author)
ORCID ; ORCID SAMURAI
Keyword
Ga2O3, forming gas, anisotropic etching, plasma-free process
Date published
2024-12-31
Updated at
2024-07-31 12:30:20 +0900
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