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論文(9)
キーワード
MoS2 (9)
2D materials (2)
DFT (1)
Exciton Pseudospin (1)
Interlayer twist (1)
Low-power transistors (1)
Memristors (1)
Motional Narrowing (1)
Negative differential resistance (1)
Polarization Contrast (1)
(more)
ライセンス
Creative Commons BY Attribution 4.0 International (5)
https://creativecommons.org/licenses/by/3.0/legalcode (2)
https://creativecommons.org/licenses/by-nc-nd/3.0/ (1)
In Copyright (1)
ファイル種別
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application/zip (1)
9 件のレコードが見つかりました。
Understanding the interplay of defects, oxygen, and strain in 2D materials for next-generation optoelectronics
論文
著者
Keerthana S Kumar ; Ajit Kumar Dash ; Hasna Sabreen H ; Manvi Verma ; Vivek Kumar ;
Kenji Watanabe
;
Takashi Taniguchi
; Gopalakrishnan Sai Gautam ; Akshay Singh
キーワード
MoS2
,
strain
,
defects
,
2D materials
,
optical spectroscopy
,
DFT
,
oxygen
刊行年月日
2024-10-01
更新時刻
2025-08-29 17:00:03 +0900
Motion of Two-Dimensional Excitons in Momentum Space Leads to Pseudospin Distribution Narrowing on the Bloch Sphere
論文
著者
Garima Gupta ;
Kenji Watanabe
;
Takashi Taniguchi
; Kausik Majumdar
キーワード
2D materials
,
Exciton Pseudospin
,
Valley Decoherence
,
Motional Narrowing
,
Polarization Contrast
,
MoS2
刊行年月日
2024-05-08
更新時刻
2025-07-28 11:13:35 +0900
Ion Migration in Monolayer MoS2 Memristors
論文
著者
Sotirios Papadopoulos ; Tarun Agarwal ; Achint Jain ;
Takashi Taniguchi
;
Kenji Watanabe
; Mathieu Luisier ; Alexandros Emboras ; Lukas Novotny
キーワード
Memristors
,
MoS2
,
defect densities
刊行年月日
2022-07-08
更新時刻
2025-03-01 12:30:23 +0900
The optical response of artificially twisted MoS$$_2$$ bilayers
論文
著者
M. Grzeszczyk ; J. Szpakowski ; A. O. Slobodeniuk ; T. Kazimierczuk ; M. Bhatnagar ;
T. Taniguchi
;
K. Watanabe
; P. Kossacki ; M. Potemski ; A. Babiński ; M. R. Molas
キーワード
Interlayer twist
,
MoS2
,
Raman scattering
刊行年月日
更新時刻
2025-03-01 08:30:17 +0900
Evidence of the Coulomb gap in the density of states of MoS2
論文
著者
Michele Masseroni ; Tingyu Qu ;
Takashi Taniguchi
;
Kenji Watanabe
; Thomas Ihn ; Klaus Ensslin
キーワード
MoS2
,
dual-gated exfoliated bilayer
,
electron localization
刊行年月日
2023-02-14
更新時刻
2025-02-28 12:30:25 +0900
Steep-slope Schottky diode with cold metal source
論文
著者
Wongil Shin ; Gyuho Myeong ; Kyunghwan Sung ; Seungho Kim ; Hongsik Lim ; Boram Kim ; Taehyeok Jin ; Jihoon Park ;
Kenji Watanabe
;
Takashi Taniguchi
; Fei Liu ; Sungjae Cho
キーワード
Low-power transistors
,
Schottky diode
,
MoS2
刊行年月日
2022-06-13
更新時刻
2025-02-26 08:30:57 +0900
Imaging quantum dot formation in MoS2 nanostructures
論文
著者
S Bhandari ; K Wang ;
K Watanabe
;
T Taniguchi
; P Kim ; R M Westervelt
キーワード
MoS2
,
scanning probe microscope
,
quantum dots
刊行年月日
2018-10-19
更新時刻
2025-02-23 22:49:46 +0900
Fine structure of K-excitons in multilayers of transition metal dichalcogenides
論文
著者
A O Slobodeniuk ; Ł Bala ; M Koperski ; M R Molas ; P Kossacki ; K Nogajewski ; M Bartos ;
K Watanabe
;
T Taniguchi
; C Faugeras ; M Potemski
キーワード
MoS2
,
exciton states
,
magneto-reflectance
刊行年月日
更新時刻
2025-02-23 22:49:08 +0900
Minigap-induced negative differential resistance in multilayer MoS2 -based tunnel junctions
論文
著者
Seiya Kawasaki ;
Kei Kinoshita
;
Rai Moriya
;
Momoko Onodera
;
Yijin Zhang
;
Kenji Watanabe
;
Takashi Taniguchi
;
Takao Sasagawa
;
Tomoki Machida
キーワード
Negative differential resistance
,
MoS2
,
tunnel junction
刊行年月日
2024-07-01
更新時刻
2025-02-06 12:30:24 +0900
キーワード
MoS2
(9)
2D materials
(2)
DFT
(1)
Exciton Pseudospin
(1)
Interlayer twist
(1)
Low-power transistors
(1)
Memristors
(1)
Motional Narrowing
(1)
Negative differential resistance
(1)
Polarization Contrast
(1)
Raman scattering
(1)
Schottky diode
(1)
Valley Decoherence
(1)
defect densities
(1)
defects
(1)
dual-gated exfoliated bilayer
(1)
electron localization
(1)
exciton states
(1)
magneto-reflectance
(1)
optical spectroscopy
(1)
oxygen
(1)
quantum dots
(1)
scanning probe microscope
(1)
strain
(1)
tunnel junction
(1)
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