All 2D Heterostructure Tunnel Field-Effect Transistors: Impact of Band Alignment and Heterointerface Quality

論文

著者

Keigo Nakamura ; Naoka Nagamura ; Keiji Ueno ; Takashi Taniguchi ; Kenji Watanabe ; Kosuke Nagashio

キーワード

All 2D heterostructure devices, Band to band tunneling, Negative differential resistance, Subthreshold swing, Type III band alignment

刊行年月日

2020-11-18

更新時刻

2024-12-10 16:56:20 +0900