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論文(343)
キーワード
graphene (32)
hexagonal boron nitride (17)
2D materials (10)
Van der Waals heterostructures (10)
transition metal dichalcogenides (9)
WSe2 (8)
bilayer graphene (8)
photoluminescence (8)
Transition metal dichalcogenides (7)
excitons (7)
(more)
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Creative Commons BY Attribution 4.0 International (343)
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343 件のレコードが見つかりました。
Overdamped phase diffusion in hBN encapsulated graphene Josephson junctions
論文
著者
J. Tang ; M. T. Wei ; A. Sharma ; E. G. Arnault ; A. Seredinski ; Y. Mehta ;
K. Watanabe
;
T. Taniguchi
; F. Amet ; I. Borzenets
キーワード
Josephson junctions
,
graphene
,
phase diffusion
刊行年月日
2022-06-10
更新時刻
2025-02-28 08:31:25 +0900
Polarity-dependent twist-controlled resonant tunneling device based on few-layer
W
Se
2
論文
著者
Kei Kinoshita ; Rai Moriya ; Shota Okazaki ; Yijin Zhang ; Satoru Masubuchi ;
Kenji Watanabe
;
Takashi Taniguchi
; Takao Sasagawa ; Tomoki Machida
キーワード
Van der Waals quantum well
,
twisted-resonant tunneling
,
WSe2
刊行年月日
2023-12-26
更新時刻
2025-02-28 08:31:22 +0900
Nonreciprocal charge transport in topological kagome superconductor CsV3Sb5
論文
著者
Yueshen Wu ; Qi Wang ; Xiang Zhou ; Jinghui Wang ; Peng Dong ; Jiadian He ; Yifan Ding ; Bolun Teng ; Yiwen Zhang ; Yifei Li ; Chenglong Zhao ; Hongti Zhang ; Jianpeng Liu ; Yanpeng Qi ;
Kenji Watanabe
;
Takashi Taniguchi
; Jun Li
キーワード
Nonreciprocal transport
,
superconducting
,
CsV3Sb5
刊行年月日
更新時刻
2025-02-28 08:31:18 +0900
Evaluation of polyvinyl chloride adhesion to 2D crystal flakes
論文
著者
Yusai Wakafuji ; Momoko Onodera ; Satoru Masubuchi ; Rai Moriya ; Yijin Zhang ;
Kenji Watanabe
;
Takashi Taniguchi
; Tomoki Machida
キーワード
Polyvinyl chloride
,
2D crystal flakes
,
adhesion forces
刊行年月日
更新時刻
2025-02-28 08:31:14 +0900
Exciton spectroscopy and unidirectional transport in MoSe2-WSe2 lateral heterostructures encapsulated in hexagonal boron nitride
論文
著者
Dorian Beret ; Ioannis Paradisanos ; Hassan Lamsaadi ; Ziyang Gan ; Emad Najafidehaghani ; Antony George ; Tibor Lehnert ; Johannes Biskupek ; Ute Kaiser ; Shivangi Shree ; Ana Estrada-Real ; Delphine Lagarde ; Xavier Marie ; Pierre Renucci ;
Kenji Watanabe
;
Takashi Taniguchi
; Sébastien Weber ; Vincent Paillard ; Laurent Lombez ; Jean-Marie Poumirol ; Andrey Turchanin ; Bernhard Urbaszek
キーワード
Lateral edge epitaxy
,
MoSe2-WSe2 heterostructures
,
excitonic diffusion
刊行年月日
更新時刻
2025-02-28 08:31:11 +0900
Exciton-polarons in the presence of strongly correlated electronic states in a MoSe2/WSe2 moiré superlattice
論文
著者
Aidan J. Campbell ; Mauro Brotons-Gisbert ; Hyeonjun Baek ; Valerio Vitale ;
Takashi Taniguchi
;
Kenji Watanabe
; Johannes Lischner ; Brian D. Gerardot
キーワード
Moiré materials
,
exciton-polarons
,
correlated electronic states
刊行年月日
更新時刻
2025-02-28 08:31:07 +0900
Experimental observation of spin−split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
論文
著者
Priya Tiwari ; Mohit Kumar Jat ; Adithi Udupa ; Deepa S. Narang ;
Kenji Watanabe
;
Takashi Taniguchi
; Diptiman Sen ; Aveek Bid
キーワード
Spin-orbit coupling
,
graphene
,
band structure
刊行年月日
更新時刻
2025-02-28 08:31:01 +0900
Imaging the effect of high photoexcited densities on valley polarization and coherence in MoS2 monolayers
論文
著者
F. Cadiz ; S. Gerl ;
T. Taniguchi
;
K. Watanabe
キーワード
Valley polarization
,
MoS2 monolayer
,
exciton-exciton interactions
刊行年月日
更新時刻
2025-02-28 08:31:04 +0900
Monolayer indium selenide: an indirect bandgap material exhibits efficient brightening of dark excitons
論文
著者
Naomi Tabudlong Paylaga ; Chang-Ti Chou ; Chia-Chun Lin ;
Takashi Taniguchi
;
Kenji Watanabe
; Raman Sankar ; Yang-hao Chan ; Shao-Yu Chen ; Wei-Hua Wang
キーワード
Atomically thin
,
InSe
,
dark excitons
刊行年月日
更新時刻
2025-02-28 08:30:58 +0900
Single-crystalline nanoribbon network field effect transistors from arbitrary two-dimensional materials
論文
著者
Muhammad Awais Aslam ; Tuan Hoang Tran ; Antonio Supina ; Olivier Siri ; Vincent Meunier ;
Kenji Watanabe
;
Takashi Taniguchi
; Marko Kralj ; Christian Teichert ; Evgeniya Sheremet ; Raul D. Rodriguez ; Aleksandar Matković
キーワード
Graphene nanoribbons
,
quantum realm
,
opto-electronic devices
刊行年月日
更新時刻
2025-02-28 08:30:55 +0900
キーワード
graphene
(32)
hexagonal boron nitride
(17)
2D materials
(10)
Van der Waals heterostructures
(10)
transition metal dichalcogenides
(9)
WSe2
(8)
bilayer graphene
(8)
photoluminescence
(8)
Transition metal dichalcogenides
(7)
excitons
(7)
van der Waals heterostructures
(7)
Moiré superlattices
(6)
Twisted bilayer graphene
(6)
Bilayer graphene
(5)
Excitons
(5)
Hexagonal boron nitride
(5)
MoS2
(5)
ferromagnetism
(5)
Graphene
(4)
Graphene nanoribbons
(4)
Landau levels
(4)
Magic-angle twisted bilayer graphene
(4)
MoSe2 monolayer
(4)
band structure
(4)
interlayer excitons
(4)
moiré potential
(4)
molecular beam epitaxy
(4)
2D semiconductors
(3)
Josephson junctions
(3)
Nonreciprocal transport
(3)
Quantum Hall effect
(3)
Spin-orbit coupling
(3)
WSe2/WS2
(3)
bilayer MoS2
(3)
dark excitons
(3)
electronic properties
(3)
quantum dot
(3)
twist angle
(3)
van der Waals materials
(3)
3R-MoS2
(2)
Bernal-stacked bilayer graphene
(2)
Charge transport
(2)
CrOCl
(2)
CrPS4
(2)
Defect centers
(2)
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(2)
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(2)
Josephson junction
(2)
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(2)
Low-power transistors
(2)
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(2)
MoSe2
(2)
MoSe2/WS2
(2)
MoTe2
(2)
NbSe2
(2)
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(2)
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(2)
ReS2
(2)
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(2)
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(2)
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(2)
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(2)
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(2)
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(2)
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(2)
chemical vapor deposition
(2)
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(2)
electronic correlation
(2)
exciton correlations
(2)
field effect transistors
(2)
fractional quantum Hall
(2)
gate voltage
(2)
hBN
(2)
heterostructures
(2)
indium selenide
(2)
light-matter coupling
(2)
magnetic properties
(2)
many-body effects
(2)
multilayer graphene
(2)
optoelectronic devices
(2)
photoluminescence spectroscopy
(2)
quantum dots
(2)
quantum tunneling
(2)
single-photon emitters
(2)
spintronics
(2)
superconductivity
(2)
trilayer graphene
(2)
van der Waals
(2)
van der Waals heterostructure
(2)
weak localization
(2)
exciton Kapitza resistance
(1)
graphene nanoribbon
(1)
phonon-polaritons
(1)
transport properties
(1)
- Fractional Quantum Hall Effect
(1)
2D TMD semiconductors
(1)
2D antiferromagnetic semiconductors
(1)
2D crystal flakes
(1)
2D field-effect transistors
(1)
2D/3D heterointegration
(1)
2H to 1T'-MoTe2
(1)
ARPES
(1)
Asymmetric dual-grating gate
(1)
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(1)
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(1)
Atomic scale
(1)
Atomically precise fabrication
(1)
Atomically thin
(1)
Atomically-precise nanopores
(1)
Auger-type scattering
(1)
Automated scanning
(1)
Ballistic bilayer graphene
(1)
Ballistic electrons
(1)
Band gap engineering
(1)
Band structure
(1)
Band-inverted phase
(1)
Bandstructure engineering
(1)
Bernal-stacked trilayer graphene
(1)
Bi2Sr2CuCa2O8+δ superconductors
(1)
Bidirectional diode
(1)
Boron nitride
(1)
Bose-Einstein condensation
(1)
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(1)
CVD
(1)
CVD graphene
(1)
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(1)
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(1)
Chern state
(1)
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(1)
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(1)
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(1)
Confocal Raman spectroscopy
(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
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(1)
Cr+ ions
(1)
CrBr3
(1)
CrI3
(1)
CrI3/CrCl3 heterostructures
(1)
CrSBr
(1)
CrX3
(1)
Crossbar array
(1)
CsV3Sb5
(1)
CuCrP2S6
(1)
Dark exciton
(1)
Dark excitons
(1)
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(1)
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(1)
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(1)
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(1)
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(1)
Dirac-source diode
(1)
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(1)
Electrical conductance
(1)
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(1)
Electrochemical behavior
(1)
Electrochemistry
(1)
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(1)
Electron transport
(1)
Electron-electron interactions
(1)
Electron-hole bilayers
(1)
Electrostatic potentials
(1)
Energy transfer
(1)
Epitaxial graphene
(1)
Epitaxial growth
(1)
Exchange bias
(1)
Exciton properties
(1)
Exciton species
(1)
Exciton-exciton interactions
(1)
Exciton-polaron model
(1)
Excitonic states
(1)
FePS3/Fe3GaTe2
(1)
Fermi polarons
(1)
Fermi sea screening
(1)
Ferroelectric materials
(1)
Ferroelectric polarization
(1)
Ferroelectricity
(1)
Ferroic phases
(1)
Ferromagnetic state
(1)
Field-effect control
(1)
Flat bands
(1)
Floquet engineering
(1)
Fluorescence imaging
(1)
Fluorescence spectra
(1)
Fractional quantum Hall
(1)
Friction anisotropy
(1)
Gate-defined quantum confined channels
(1)
Gate-tunable resistance
(1)
Gate-tunable superconducting
(1)
Graphene Josephson junction
(1)
Graphene devices
(1)
Graphene gapped states
(1)
Graphene quantum dots
(1)
Graphene-based Josephson junction
(1)
Graphene-based devices
(1)
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