論文・データセット - MDR: NIMS Materials Data Repository

キーワード: Ga2O3

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33 件のレコードが見つかりました。 1件目から10件目まで表示します。

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EB_alpha-GO_240422-2HQ(clean).pdf

Epitaxial Lateral Overgrowth of c-plane α-Ga2O3 using a stripe mask with ultra-narrow windows

ジャーナル論文
著者: Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group

NIMS Researchers Directory SAMURAI

;

Takashi Shinohe (author) (この著者で検索)

FLOSFIA INC.
キーワード: Ga2O3, dislocation, HVPE, ELO
刊行年月日: 2025-05-19
更新時刻: 2025-05-21 16:30:09 +0900

jjap_65_3_038003-1.pdf

Mapping primary crystallographic planes in β -Ga ₂ O ₃ based on a pseudo-cubic oxygen sublattice

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, fcc
刊行年月日: 2026-02-16
更新時刻: 2026-02-18 16:30:08 +0900

nohighlight_Si-K-Ga2O3_resubmit_2403011908_revYY.pdf

Photoelectron holographic study for atomic site occupancy for Si dopants in Si-doped κ-Ga2O3(001)

ジャーナル論文
著者: Yuhua Tsai (author) (この著者で検索)

https://orcid.org/0000-0001-7996-6681

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

;

Yusuke Hashimoto (author) (この著者で検索)

NAIST

;

ZeXu Sun (author) (この著者で検索)

NAIST

;

Takuya Moriki (author) (この著者で検索)

NAIST

;

Takashi Tadamura (author) (この著者で検索)

NAIST

;

Takahiro Nagata (author) (この著者で検索)

https://orcid.org/0000-0002-8591-2943

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

NIMS Researchers Directory SAMURAI

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Piero Mazzolini (author) (この著者で検索)

University of Parma

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Antonella Parisini (author) (この著者で検索)

University of Parma

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Matteo Bosi (author) (この著者で検索)

IMEM-CNR

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Luca Seravalli (author) (この著者で検索)

IMEM-CNR

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Tomohiro Matsushita (author) (この著者で検索)

NAIST

;

Yoshiyuki Yamashita (author) (この著者で検索)

https://orcid.org/0000-0003-0994-8095

National Institute for Materials Science Research Center for Electronic and Optical Materials/Functional Materials Field/Nano Electronics Device Materials Group

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, κ-Ga2O3
刊行年月日: 2024-04-03
更新時刻: 2025-03-07 12:30:11 +0900

Epitaxial lateral overgrowth of m-plane -Ga2O3 by halide vapor phase epitaxy-1.pdf

Epitaxial lateral overgrowth of m -plane α-Ga ₂ O ₃ by halide vapor phase epitaxy

ジャーナル論文
著者: Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI

;

Takashi Shinohe (author) (この著者で検索)

https://orcid.org/0009-0000-5559-1432 (unauthenticated)
キーワード: Ga2O3, dislocation, ELO, HVPE
刊行年月日: 2025-12-31
更新時刻: 2025-04-23 12:30:12 +0900

Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf

Rapid homoepitaxial growth of (011) β-Ga ₂ O ₃ by HCl-based halide vapor phase epitaxy

ジャーナル論文
著者: Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI

;

Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, HVPE
刊行年月日: 2025-12-31
更新時刻: 2025-11-28 08:30:04 +0900

paper_-112.pdf

HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga ₂ O ₃

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, (−112), HVPE, HCl gas etching
刊行年月日: 2026-12-31
更新時刻: 2026-07-16 10:12:49 +0900

First-principles lattice thermal conductivity calculation for Ga2O3 / C2/m (12) / materials id 886

データセット
コレクション: MDR lattice thermal conductivity calculation database
著者: Atsushi Togo (author) (この著者で検索)

https://orcid.org/0000-0001-8393-9766

National Institute for Materials Science Center for Basic Research on Materials

NIMS Researchers Directory SAMURAI
キーワード: Lattice thermal conductivity, Ga2O3
刊行年月日
更新時刻: 2026-01-24 14:36:41 +0900

First-principles lattice thermal conductivity calculation for Ga2O3 / R-3c (167) / materials id 1243

データセット
コレクション: MDR lattice thermal conductivity calculation database
著者: Atsushi Togo (author) (この著者で検索)

https://orcid.org/0000-0001-8393-9766

National Institute for Materials Science Center for Basic Research on Materials

NIMS Researchers Directory SAMURAI
キーワード: Lattice thermal conductivity, Ga2O3
刊行年月日
更新時刻: 2026-01-24 12:32:36 +0900

Dataset

Original dataset for ID 208 Ga2O3 in Thermophysical Property Database

データセット
コレクション: Thermophysical Property Original Datasets
著者: Takehiko Ishikawa (depositor) (この著者で検索)

Japan Aerospace Exploration Agency

;

Masashi Ishii (editor) (この著者で検索)

https://orcid.org/0000-0003-0357-2832

National Institute for Materials Science

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, Ceramic, Density, ISS-ELF, Electrostatic Levitation, collection - Thermophys Datasets
刊行年月日
更新時刻: 2024-03-30 18:40:44 +0900

APEX-107351.docx

Anisotropic non-plasma HCl gas etching of (010) β-Ga2O3 substrate

ジャーナル論文
著者: Takayoshi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8550-9735

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

;

Yuichi Oshima (author) (この著者で検索)

https://orcid.org/0000-0001-8293-4891

National Institute for Materials Science

NIMS Researchers Directory SAMURAI
キーワード: Ga2O3, HCl gas etching
刊行年月日: 2023-06-01
更新時刻: 2024-06-15 08:30:13 +0900