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9 件のレコードが見つかりました。

095304_1_5.0224068.pdf
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
論文
著者
Takahiro Nagata SAMURAI ORCID ; Asahiko Matsuda SAMURAI ORCID ; Takashi Teramoto ORCID ; Dominic Gerlach ORCID ; Peng Shen ORCID ; Shigenori Ueda SAMURAI ORCID ; Takako Kimura ORCID ; Christian Dussarrat ORCID ; Toyohiro Chikyow SAMURAI ORCID
キーワード
gallium nitride, GaN, nitrosyl fluoride, FNO, HAXPES, defect passivation, fluorination
刊行年月日
2025-03-07
更新時刻
2025-03-18 17:22:28 +0900
Physica Rapid Research Ltrs - 2024 - Kano - Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution.pdf
Impact of Sequential N Ion Implantation on Extended Defects and Mg Distribution in Mg Ion‐Implanted GaN
論文
著者
Emi Kano ORCID ; Jun Uzuhashi SAMURAI ORCID ; Koki Kobayashi ; Kosuke Ishikawa ; Kyosuke Sawabe ; Tetsuo Narita ; Kacper Sierakowski ; Michal Bockowski ; Tadakatsu Ohkubo SAMURAI ORCID ; Tetsu Kachi ; Nobuyuki Ikarashi ORCID
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy
刊行年月日
2024-04-22
更新時刻
2024-09-20 16:30:27 +0900
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer.pdf
Effect of sequential N ion implantation in the formation of a shallow Mg-implanted p-type GaN layer
論文
著者
Jun Uzuhashi SAMURAI ORCID ; Jun Chen SAMURAI ORCID ; Ryo Tanaka ; Shinya Takashima ; Masaharu Edo ; Tadakatsu Ohkubo SAMURAI ORCID ; Takashi Sekiguchi
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy, cathodoluminescence
刊行年月日
2024-08-07
更新時刻
2024-08-03 08:30:15 +0900
Vacancy-type defects and their trapping-detrapping of charge carriers in ion-implanted GaN studied by positron annihilation.pdf
Vacancy‐Type Defects and Their Trapping/Detrapping of Charge Carriers in Ion‐Implanted GaN Studied by Positron Annihilation
論文
著者
Akira Uedono ORCID ; Ryo Tanaka ORCID ; Shinya Takashima ORCID ; Katsunori Ueno ; Masaharu Edo ; Kohei Shima ORCID ; Shigefusa F. Chichibu ORCID ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Shoji Ishibashi ORCID ; Kacper Sierakowski ORCID ; Michal Bockowski ORCID
キーワード
gallium nitride
刊行年月日
2024-02-29
更新時刻
2025-03-01 12:30:45 +0900
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs.pdf
Development of p-type Ion Implantation Technique for Realization of GaN Vertical MOSFETs
プロシーディングス
著者
Ryo Tanaka ; Shinya Takashima ; Katsunori Ueno ; Masahiro Horita ; Jun Suda ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Masaharu Edo
キーワード
gallium nitride, atom probe tomography, transmission electron microscopy
刊行年月日
2023-06-08
更新時刻
2024-04-19 12:30:23 +0900
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation.pdf
Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
論文
著者
Emi Kano ; Keita Kataoka ; Jun Uzuhashi SAMURAI ORCID ; Kenta Chokawa ; Hideki Sakurai ; Akira Uedono ; Tetsuo Narita ; Kacper Sierakowski ; Michal Bockowski ; Ritsuo Otsuki ; Koki Kobayashi ; Yuta Itoh ; Masahiro Nagao ; Tadakatsu Ohkubo SAMURAI ORCID ; Kazuhiro Hono SAMURAI ORCID ; Jun Suda ; Tetsu Kachi ; Nobuyuki Ikarashi
キーワード
gallium nitride, transmission electron microscopy, atom probe tomography
刊行年月日
2022-08-14
更新時刻
2024-01-05 22:13:58 +0900
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam.pdf
Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam
論文
著者
Akira Uedono ; Hideki Sakurai ; Jun Uzuhashi SAMURAI ORCID ; Tetsuo Narita ; Kacper Sierakowski ; Shoji Ishibashi ; Shigefusa F. Chichibu ; Michal Bockowski ; Jun Suda ; Tadakatsu Ohokubo ; Nobuyuki Ikarashi ; Kazuhiro Hono SAMURAI ORCID ; Tetsu Kachi
キーワード
gallium nitride, vacancy, positron
刊行年月日
2023-03-15
更新時刻
2024-01-05 22:12:35 +0900
Acceptor activation of Mg-doped GaN – Effects of N2-O2 vs N2 as ambient gas during annealing.pdf
Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
論文
著者
Ashutosh Kumar ORCID ; Martin Berg ; Qin Wang ; Jun Uzuhashi SAMURAI ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Michael Salter ; Peter Ramvall
キーワード
gallium nitride, scanning transmission electron microscopy, semiconductor, activation
刊行年月日
2023-07-21
更新時刻
2024-01-05 22:12:15 +0900
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing.pdf
Atomic-scale investigation of implanted Mg in GaN through ultra-high-pressure annealing
論文
著者
Jun Uzuhashi SAMURAI ORCID ; Jun Chen SAMURAI ORCID ; Ashutosh Kumar ORCID ; Wei Yi ORCID ; Tadakatsu Ohkubo SAMURAI ORCID ; Ryo Tanaka ; Shinya Takashima ; Masaharu Edo ; Kacper Sierakowski ; Michal Bockowski ; Hideki Sakurai ; Tetsu Kachi ; Takashi Sekiguchi ORCID ; Kazuhiro Hono SAMURAI ORCID
キーワード
gallium nitride, implantation, atom probe tomography, cathodoluminescence, scanning transmission electron microscopy
刊行年月日
2022-05-14
更新時刻
2024-01-05 22:11:22 +0900