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Research Highlights(1)
資源タイプ
論文(13)
雑誌(1)
キーワード
GaN (14)
HAXPES (2)
4D-STEM (1)
ABF-STEM (1)
AlInN (1)
AlN (1)
Amorphous structure (1)
Diamond (1)
Dislocation (1)
Double Heterostructures (1)
(more)
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Creative Commons BY Attribution 4.0 International (8)
In Copyright (4)
Creative Commons BY-NC Attribution-NonCommercial 4.0 International (2)
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14 件のレコードが見つかりました。
A three-step surface treatment and its impacts on electrical properties of c- and m-face GaN/Al2O3 MOS structures
論文
著者
Masahiro Hara
;
Toshihide Nabatame
;
Yoshihiro Irokawa
; Tomomi Sawada ; Manami Miyamoto ; Hiromi Miura ; Tsunenobu Kimoto ; Yasuo Koide
キーワード
GaN
刊行年月日
2025-05-07
更新時刻
2025-05-08 09:49:21 +0900
Heat transport exploration through the GaN/diamond interfaces using machine learning potential
論文
著者
Zhanpeng Sun ; Yunfei Song ; Zijun Qi ; Xiang Sun ;
Meiyong Liao
; Rui Li ;
Qijun Wang
; Lijie Li ;
Gai Wu
; Wei Shen ; Sheng Liu
キーワード
thermal conductivity
,
GaN
,
Diamond
刊行年月日
2025-01-16
更新時刻
2025-04-22 08:53:40 +0900
Effect of surface vacancy defects on the phonon thermal transport across GaN/diamond interface
論文
著者
Kongping Wu
; Renxiang Cheng ; Leng Zhang ; Wenxiu Wang ; Fangzhen Li ;
Meiyong Liao
キーワード
diamond
,
heat spreader
,
GaN
,
calculation
刊行年月日
2024-12-19
更新時刻
2025-04-21 17:03:32 +0900
Effects of nitrosyl fluoride based gas treatment on fluorination and redox reaction at GaN surface and Pt/GaN interface
論文
著者
Takahiro Nagata
;
Asahiko Matsuda
;
Takashi Teramoto
;
Dominic Gerlach
;
Peng Shen
;
Shigenori Ueda
;
Takako Kimura
;
Christian Dussarrat
;
Toyohiro Chikyow
キーワード
gallium nitride
,
GaN
,
nitrosyl fluoride
,
FNO
,
HAXPES
,
defect passivation
,
fluorination
刊行年月日
2025-03-07
更新時刻
2025-03-18 17:22:28 +0900
Analysis of local strain fields around individual threading dislocations in GaN substrates by nanobeam x-ray diffraction
論文
著者
T. Hamachi
;
T. Tohei
;
Y. Hayashi
;
S. Usami
; M. Imanishi ; Y. Mori ; K. Sumitani ;
Y. Imai
;
S. Kimura
;
A. Sakai
キーワード
GaN
,
Dislocation
,
SPring-8
刊行年月日
2024-06-14
更新時刻
2024-12-05 12:47:52 +0900
Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO
2
Process
論文
著者
Yoshihiro Irokawa
;
Toshihide Nabatame
; Tomomi Sawada ; Manami Miyamoto ; Hiromi Miura ;
Kazuhito Tsukagoshi
;
Yasuo Koide
キーワード
GaN
刊行年月日
2024-08-01
更新時刻
2024-09-02 12:30:27 +0900
Degradation of vertical GaN diodes during proton and xenon-ion irradiation
論文
著者
Hironori Okumura ; Yohei Ogawara ; Manabu Togawa ; Masaya Miyahara ; Tadaaki Isobe ; Kosuke Itabashi ; Jiro Nishinaga ;
Masataka Imura
キーワード
GaN
,
Schottky barrier diode
,
MOCVD
,
Vertical-type PN junction diode
,
Radiation irradiations
,
Proton
,
Xe
刊行年月日
2023-06-01
更新時刻
2024-08-24 08:30:18 +0900
Formation of GaN mesas with reverse-tapered edge structures on a lattice-matched AlInN layer for a positive beveled edge termination
論文
著者
Takayoshi Oshima
;
Masataka Imura
;
Yuichi Oshima
キーワード
GaN
,
AlInN
,
etching
,
positive bevel edge termination
刊行年月日
2024-08-01
更新時刻
2024-08-02 12:30:52 +0900
Magnetoresistance analysis of two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures
論文
著者
S. Yamada
; A. Fujimoto ;
S. Yagi
;
H. Narui
; E. Yamaguchi ;
Y. Imanaka
キーワード
GaN
,
Double Heterostructures
,
Hole gas
,
Magnetoresistance
,
Spin-Orbit coupling
刊行年月日
2024-06-24
更新時刻
2024-07-13 08:30:10 +0900
Classification for transmission electron microscope images from different amorphous states using persistent homology
論文
著者
Fumihiko Uesugi
;
Masashi Ishii
キーワード
Amorphous structure
,
TEM image simulation
,
GaN
,
persistent homology
刊行年月日
2022-06-06
更新時刻
2024-07-04 16:32:11 +0900
キーワード
GaN
(14)
HAXPES
(2)
4D-STEM
(1)
ABF-STEM
(1)
AlInN
(1)
AlN
(1)
Amorphous structure
(1)
Diamond
(1)
Dislocation
(1)
Double Heterostructures
(1)
EELS
(1)
FNO
(1)
HAADF-STEM
(1)
Hole gas
(1)
MEMS
(1)
MOCVD
(1)
Magnetoresistance
(1)
NEMS
(1)
Proton
(1)
Radiation irradiations
(1)
SPring-8
(1)
Schottky barrier diode
(1)
Schottky barrier height
(1)
Si
(1)
Spin-Orbit coupling
(1)
Strain
(1)
TEM image simulation
(1)
Vertical-type PN junction diode
(1)
Xe
(1)
calculation
(1)
defect
(1)
defect passivation
(1)
diamond
(1)
energy storage
(1)
etching
(1)
fluorination
(1)
gallium nitride
(1)
heat spreader
(1)
hydrogen
(1)
nitrosyl fluoride
(1)
persistent homology
(1)
positive bevel edge termination
(1)
temperature coefficient of frequency
(1)
thermal conductivity
(1)
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