Investigation of group 13 elements as potential candidates for p-type dopants in the narrow-gap thermoelectric semiconductor α-SrSi2

Article

Creator

Haruno Kunioka ; Daishi Shiojiri ; Shinta Takahashi ; Kota Hiratsuka ; Masato Yamaguchi ; Naomi Hirayama ; Yoji Imai ; Motoharu Imai ; Tsutomu Iida

Keyword

silicide, thermoelectric material, doping, first-principles calculation, melt growth, sintering, SrSi2

Date published

2024-04-25

Updated at

2024-07-17 09:05:42 +0900