Solvation Effects on the Electrical Properties of a Microfluid-Assisted Solution Field-Effect Transistor with Atomically Thin MoS₂ Layers

Journal article

Creator

Md Nasiruddin (author) (Search by this author)

Md Nasiruddin ;

Zhipeng Wang (author) (Search by this author)

Zhipeng Wang ;

Hiroki Waizumi (author) (Search by this author)

Hiroki Waizumi ;

Tsuyoshi Takaoka (author) (Search by this author)

Tsuyoshi Takaoka ;

Yasuyuki Sainoo (author) (Search by this author)

Yasuyuki Sainoo ;

Atsushi Ando (author) (Search by this author)

Atsushi Ando ;

Ryuichi Arafune (author) (Search by this author)

https://orcid.org/0000-0003-4371-6116

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Ryuichi Arafune ;

Mao Fukuyama (author) (Search by this author)

Mao Fukuyama ;

Akihide Hibara (author) (Search by this author)

Akihide Hibara ;

Tadahiro Komeda (author) (Search by this author)

Tadahiro Komeda

Keyword

transition-metaldichalcogenidesfield-effecttransistor, TCNQ, solvation effect, dielectric constant

Date published

2023-08-25

Updated at

2025-10-28 12:30:37 +0900