Effects of arsenic oxides on GaAs surfaces on photoluminescence properties of buried InGaAs quantum wells: Dependence on initial surfaces before oxidation

Article

Creator

Zhao Ma ; Takaaki Mano ; Akihiro Ohtake ; Takashi Kuroda

Keyword

GaAs, Surface, Termination, Oxide, Arsenic

Date published

2025-06-28

Updated at

2025-06-27 16:30:25 +0900