Electron trapping/detrapping at oxygen vacancies and imprint evolution in La-doped Hf0.5Zr0.5O2 ferroelectric capacitors probed by hard x-ray photoelectron spectroscopy

Article

Creator

W. Hamouda ; Y. Yamashita ; S. Ueda ; S. Matzen ; O. Renault ; F. Mehmood ; T. Mikolajick ; U. Schroeder ; N. Barrett

Keyword

Hf0.5Zr0.5O2, HAXPES, operando

Date published

2025-11-03

Updated at

2025-11-13 12:30:12 +0900