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Article(2)
Keyword
Sliding ferroelectricity (2)
Ferroelectric field-effect transistor (FeFET) (1)
Nonvolatile memory technology (1)
bilayer MoS2 (1)
polarization switching (1)
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2 records found.
Ultrafast high-endurance memory based on sliding ferroelectrics
Article
Creator
Kenji Yasuda ; Evan Zalys-Geller ; Xirui Wang ; Daniel Bennett ; Suraj S. Cheema ;
Kenji Watanabe
;
Takashi Taniguchi
; Efthimios Kaxiras ; Pablo Jarillo-Herrero ; Raymond Ashoori
Keyword
Sliding ferroelectricity
,
Ferroelectric field-effect transistor (FeFET)
,
Nonvolatile memory technology
Date published
2024-07-05
Updated at
2025-07-23 16:30:28 +0900
Non-volatile electrical polarization switching via domain wall release in 3R-MoS2 bilayer
Article
Creator
Dongyang Yang ; Jing Liang ; Jingda Wu ; Yunhuan Xiao ; Jerry I. Dadap ;
Kenji Watanabe
;
Takashi Taniguchi
; Ziliang Ye
Keyword
Sliding ferroelectricity
,
bilayer MoS2
,
polarization switching
Date published
Updated at
2025-02-08 12:30:20 +0900
Keyword
Sliding ferroelectricity
(2)
Ferroelectric field-effect transistor (FeFET)
(1)
Nonvolatile memory technology
(1)
bilayer MoS2
(1)
polarization switching
(1)
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