Communication—A Powerful Method to Improve Dielectric/GaN Interface Properties: A Dummy SiO₂ Process

Journal article

Creator

Yoshihiro Irokawa (author) (Search by this author)

https://orcid.org/0000-0002-6531-4356

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Yoshihiro Irokawa ;

Toshihide Nabatame (author) (Search by this author)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Toshihide Nabatame ;

Tomomi Sawada (author) (Search by this author)

National Institute for Materials Science

Tomomi Sawada ;

Manami Miyamoto (author) (Search by this author)

Manami Miyamoto ;

Hiromi Miura (author) (Search by this author)

Hiromi Miura ;

Kazuhito Tsukagoshi (author) (Search by this author)

https://orcid.org/0000-0001-9710-2692

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Kazuhito Tsukagoshi ;

Yasuo Koide (author) (Search by this author)

https://orcid.org/0000-0001-8321-9822

National Institute for Materials Science

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Yasuo Koide

Keyword

GaN

Date published

2024-08-01

Updated at

2024-09-02 12:30:27 +0900