2 records found.
Interface engineering of HfO 2 -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO 2 nucleation layers
- Journal article
- Creator
-
Takashi Onaya (author) (Search by this author)
https://orcid.org/0000-0002-2710-8623
(unauthenticated)
National Institute for Materials Science
;
Toshihide Nabatame (author) (Search by this author)National Institute for Materials Science
- Keyword
- atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control
- Date published
- 2026-04-30
- Updated at
- 2026-07-13 17:01:06 +0900
Enhanced spin–orbit torque efficiency via interface engineering in BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe) topological heterostructures
- Journal article
- Creator
-
;Rohiteswar Mondal (author) (Search by this author)Zhenchao Wen (author) (Search by this author)
;
Chandrasekhar Murapaka (author) (Search by this author)
https://orcid.org/0000-0002-0283-7037
(unauthenticated)
;
Seiji Mitani (author) (Search by this author)
;
Hiroaki Sukegawa (author) (Search by this author)
;
Quang Le (author) (Search by this author)
https://orcid.org/0000-0002-4991-5290
(unauthenticated)
;
Xiaoyong Liu (author) (Search by this author)
https://orcid.org/0000-0002-2661-8197
(unauthenticated)
;
;Brian York (author) (Search by this author)Maki Maeda (author) (Search by this author)
https://orcid.org/0009-0002-2808-0498
(unauthenticated)
- Keyword
- interface engineering, topological heterostructures, BiSb/X/CoFeB (X = Ge, NiAl, NiFeGe)
- Date published
- 2026-05-14
- Updated at
- 2026-05-12 09:47:48 +0900