Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing

Journal article

Creator

Ashutosh Kumar (author) (Search by this author)

https://orcid.org/0000-0002-8085-1598 (unauthenticated)

National Institute for Materials Science

Ashutosh Kumar ;

Martin Berg (author) (Search by this author)

Martin Berg ;

Qin Wang (author) (Search by this author)

Qin Wang ;

Jun Uzuhashi (author) (Search by this author)

https://orcid.org/0000-0003-2023-8158

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Jun Uzuhashi ;

Tadakatsu Ohkubo (author) (Search by this author)

https://orcid.org/0000-0003-3548-1951

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Tadakatsu Ohkubo ;

Michael Salter (author) (Search by this author)

Michael Salter ;

Peter Ramvall (author) (Search by this author)

Peter Ramvall

Keyword

gallium nitride, scanning transmission electron microscopy, semiconductor, activation

Date published

2023-07-21

Updated at

2024-01-05 22:12:15 +0900