HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga ₂ O ₃

Journal article

Creator

Takayoshi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8550-9735

NIMS Researchers Directory SAMURAI

Takayoshi Oshima ;

Yuichi Oshima (author) (Search by this author)

https://orcid.org/0000-0001-8293-4891

NIMS Researchers Directory SAMURAI

Yuichi Oshima

Keyword

Ga2O3, (−112), HVPE, HCl gas etching

Date published

2026-12-31

Updated at

2026-07-16 10:12:49 +0900