Interface engineering of HfO ₂ -based ferroelectric devices for crystal phase control and enhanced ferroelectricity using atomic-layer-deposited ZrO ₂ nucleation layers

Journal article

Creator

Takashi Onaya (author) (Search by this author)

https://orcid.org/0000-0002-2710-8623 (unauthenticated)

National Institute for Materials Science

Takashi Onaya ;

Toshihide Nabatame (author) (Search by this author)

https://orcid.org/0000-0002-5973-0230

National Institute for Materials Science

NIMS Researchers Directory SAMURAI

Toshihide Nabatame

Keyword

atomic layer deposition, ferroelectric HfO2-based thin films, memory devices, interface engineering, crystal phase control

Date published

2026-04-30

Updated at

2026-07-13 17:01:06 +0900