Acceptor activation of Mg-doped GaN—Effects of N2/O2 vs N2 as ambient gas during annealing
- Journal article
- Creator
-
Ashutosh Kumar (author) (Search by this author)
https://orcid.org/0000-0002-8085-1598
(unauthenticated)
National Institute for Materials Science
;
;Martin Berg (author) (Search by this author);Qin Wang (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
;
Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
;
;Michael Salter (author) (Search by this author)Peter Ramvall (author) (Search by this author) - Keyword
- gallium nitride, scanning transmission electron microscopy, semiconductor, activation
- Date published
- 2023-07-21
- Updated at
- 2024-01-05 22:12:15 +0900
Optical conductivity and band gap in the double-Weyl candidate at ambient pressure
- Journal article
- Creator
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L. Z. Maulana (author) (Search by this author)
https://orcid.org/0000-0003-3320-0298
(unauthenticated)
;
A. A. Tsirlin (author) (Search by this author)
https://orcid.org/0000-0001-6916-8256
(unauthenticated)
;
E. Uykur (author) (Search by this author)
https://orcid.org/0000-0001-7253-4579
(unauthenticated)
;
Y. Saito (author) (Search by this author)
https://orcid.org/0000-0003-2844-7245
(unauthenticated)
;
M. Dressel (author) (Search by this author)
https://orcid.org/0000-0003-1907-052X
(unauthenticated)
;
M. Imai (author) (Search by this author)
;
A. V. Pronin (author) (Search by this author)
https://orcid.org/0000-0003-2585-7476
(unauthenticated)
- Keyword
- silicide, semiconductor, optical conductivity
- Date published
- 2025-10-20
- Updated at
- 2025-10-24 08:30:08 +0900