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Atomic resolution analysis of extended defects and Mg agglomeration in Mg-ion-implanted GaN and their impacts on acceptor formation
- Journal article
- Creator
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;Emi Kano (author) (Search by this author);Keita Kataoka (author) (Search by this author)Jun Uzuhashi (author) (Search by this author)National Institute for Materials Science
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;Kenta Chokawa (author) (Search by this author);Hideki Sakurai (author) (Search by this author);Akira Uedono (author) (Search by this author);Tetsuo Narita (author) (Search by this author);Kacper Sierakowski (author) (Search by this author);Michal Bockowski (author) (Search by this author);Ritsuo Otsuki (author) (Search by this author);Koki Kobayashi (author) (Search by this author);Yuta Itoh (author) (Search by this author);Masahiro Nagao (author) (Search by this author)Tadakatsu Ohkubo (author) (Search by this author)National Institute for Materials Science
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Kazuhiro Hono (author) (Search by this author)National Institute for Materials Science
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;Jun Suda (author) (Search by this author);Tetsu Kachi (author) (Search by this author)Nobuyuki Ikarashi (author) (Search by this author) - Keyword
- gallium nitride, transmission electron microscopy, atom probe tomography
- Date published
- 2022-08-14
- Updated at
- 2024-01-05 22:13:58 +0900