Keyword: Ga2O3
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24 records found. Displaying records 1 to 10.

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Oshima - 2026 - Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing-annotated.pdf
Step-and-terrace surface formation on (−112) β-Ga 2 O 3 via thermal annealing
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3
Date published
2026-09-15
Updated at
2026-09-14 09:13:42 +0900
Nabatame_d-SiO2-Ga2O3 2026_ECS_J._Solid_State_Sci._Technol._15_064005.pdf
Characteristics of β-Ga2O3/Al2O3/Pt capacitors with a Ga2O3 surface modified using the dummy-SiO2 process
Journal article
Creator
Toshihide Nabatame (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA), National Institute for Materials Science
ORCID SAMURAI ;
Yoshihiro Irokawa (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Tomomi Sawada (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Hiromi Miura (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Manami Miyamoto (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
;
Takashi Onaya (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID ;
Yasuo Koide (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Next-generation Semiconductor Group, National Institute for Materials Science
ORCID SAMURAI ;
Kazuhito Tsukagoshi (author) (Search by this author)
Research Center for Materials Nanoarchitectonics (MANA)/Semiconductor Materials Field/Thin Film Electronics Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, atomic layer deposition, dummy-SiO2, Al2O3, positive bias stress
Date published
2026-06-01
Updated at
2026-08-18 11:30:17 +0900
再々投稿_260324.docx
Photoelectron Holographic Study of Atomic Structure of Si Dopants for Si-doped κ-Ga2O3(001)
Journal article
Creator
Yoshiyuki YAMASHITA (author) (Search by this author)
;
Yuhua TSAI (author) (Search by this author)
;
Yusuke HASHIMOTO (author) (Search by this author)
;
Tomohiro MATSUSHITA (author) (Search by this author)
;
Piero MAZZOLINI (author) (Search by this author)
Keyword
Photoelectron Holography, Ga2O3, dopant
Date published
2026-07-10
Updated at
2026-08-05 15:56:53 +0900
paper_-112.pdf
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (−112) β-Ga 2 O 3
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, (−112), HVPE, HCl gas etching
Date published
2026-12-31
Updated at
2026-07-16 10:12:49 +0900
article.pdf
Tetramethylammonium hydroxide (TMAH) treatment of dry-etched trenches on (010) β-Ga2O3 to enhance trench profiles
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, TMAH
Date published
2026-02-01
Updated at
2026-02-25 12:30:03 +0900
jjap_65_3_038003-1.pdf
Mapping primary crystallographic planes in β -Ga 2 O 3 based on a pseudo-cubic oxygen sublattice
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, fcc
Date published
2026-02-16
Updated at
2026-02-18 16:30:08 +0900
Rapid homoepitaxial growth of 011 -Ga2O3 by HCl-based halide vapor phase epitaxy.pdf
Rapid homoepitaxial growth of (011) β-Ga 2 O 3 by HCl-based halide vapor phase epitaxy
Journal article
Creator
ORCID SAMURAI ; ORCID SAMURAI
Keyword
Ga2O3, HVPE
Date published
2025-12-31
Updated at
2025-11-28 08:30:04 +0900
Oshima_2025_Appl._Phys._Express_18_116501-1.pdf
Fabrication of β -Ga 2 O 3 /air-gap structures on (010) β -Ga 2 O 3 by wet etching in tetramethylammonium hydroxide (TMAH)
Journal article
Creator
ORCID SAMURAI
Keyword
Ga2O3, TMAH, wet etching, MEMS
Date published
2025-11-01
Updated at
2025-11-27 08:30:13 +0900
HCl-gas etching behavior of 001 -Ga2O3 under oxygen supply.pdf
HCl-gas etching of (001) β-Ga2O3 under oxygen supply
Journal article
Creator
Yuichi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI ;
Takayoshi Oshima (author) (Search by this author)
Research Center for Electronic and Optical Materials/Functional Materials Field/Ultra-wide Bandgap Semiconductors Group, National Institute for Materials Science
ORCID SAMURAI
Keyword
Ga2O3, etching, plasma-free
Date published
2025-12-31
Updated at
2025-09-04 12:30:19 +0900
Physica Status Solidi b - 2025 - Penman - Comparative Study of the Optical Properties of ‐ ‐ and ‐Ga2O3.pdf
Comparative Study of the Optical Properties of α‐, β‐, and κ‐Ga2O3
Journal article
Creator
Lewis T. Penman (author) (Search by this author)
ORCID ;
Zak M. Johnston (author) (Search by this author)
;
Paul R. Edwards (author) (Search by this author)
ORCID ; ORCID SAMURAI ;
Clifford McAleese (author) (Search by this author)
;
Piero Mazzolini (author) (Search by this author)
ORCID ;
Matteo Bosi (author) (Search by this author)
ORCID ;
Luca Seravalli (author) (Search by this author)
ORCID ;
Roberto Fornari (author) (Search by this author)
;
Robert W. Martin (author) (Search by this author)
ORCID ;
Fabien C.‐P. Massabuau (author) (Search by this author)
ORCID
Keyword
Ga2O3
Date published
2025-02-12
Updated at
2025-08-18 16:30:52 +0900
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