Conduction band caused by oxygen vacancies in aluminum oxide for resistance random access memory

論文

著者

Kubota, Masato ; Nigo, Seisuke ; Kitazawa, Hideaki ; Harada, Yoshitomo ; Kido, Giyuu ; Hirayama, Taisei ; Kato, Seiichi

キーワード

Crystallographic defects, Random access memory, Electrical properties and parameters, First-principle calculations, electron energy loss spectroscopy, Electronic bandstructure, semiconductor structures, Resistive switching, Thermally stimulated current spectroscopy, Transmission electron microscope

刊行年月日

2012-08-01

更新時刻

2024-01-05 22:12:58 +0900